All Outputs (3)

Characterisation and modelling of gallium nitride power semiconductor devices dynamic on-state resistance (2017)
Journal Article
Li, K., Evans, P., & Johnson, M. (2018). Characterisation and modelling of gallium nitride power semiconductor devices dynamic on-state resistance. IEEE Transactions on Power Electronics, 33(6), 5262 - 5273. https://doi.org/10.1109/TPEL.2017.2730260

GaN-HEMTs suffer from trapping effects which increases device ON-state resistance (RDS(on)) above its theoretical value. This increase is a function of the applied DC bias when the device is in its OFF state, and the time which the device is biased f... Read More about Characterisation and modelling of gallium nitride power semiconductor devices dynamic on-state resistance.

SiC/GaN power semiconductor devices: a theoretical comparison and experimental evaluation under different switching conditions (2017)
Journal Article
Li, K., Evans, P., & Johnson, M. (in press). SiC/GaN power semiconductor devices: a theoretical comparison and experimental evaluation under different switching conditions. IET Electrical Systems in Transportation, https://doi.org/10.1049/iet-est.2017.0022

The conduction and switching losses of SiC and GaN power transistors are compared in this paper. Voltage rating of commercial GaN power transistors is less than 650V while that of SiC power transistors is less than 1200V. The paper begins with a theo... Read More about SiC/GaN power semiconductor devices: a theoretical comparison and experimental evaluation under different switching conditions.

Using multi time-scale electro-thermal simulation approach to evaluate SiC-MOSFET power C=converter in virtual prototyping design tool (2017)
Conference Proceeding
Li, K., Evans, P., & Johnson, C. M. (in press). Using multi time-scale electro-thermal simulation approach to evaluate SiC-MOSFET power C=converter in virtual prototyping design tool.

Using virtual prototyping (VP) design tool to eval¬uate power converter electro-thermal performance can help designers to validate prototype in a quick way. However, different system time-scale requires efficient electro-thermal simulation techniques... Read More about Using multi time-scale electro-thermal simulation approach to evaluate SiC-MOSFET power C=converter in virtual prototyping design tool.