All Outputs (12)

Intermixing studies in GaN_1−xSb_x highly mismatched alloys (2016)
Journal Article
Sarney, W. L., Svensson, S. P., Ting, M., Segercrantz, N., Walukiewicz, W., Yu, K. M., …Foxon, C. T. (2017). Intermixing studies in GaN_1−xSb_x highly mismatched alloys. Applied Optics, 56(3), B64-B69. https://doi.org/10.1364/AO.56.000B64

GaN1−xSbx with x~ 5-7% is a highly mismatched alloy predicted to have favorable properties for application as an electrode in a photo-electrochemical cell for solar water splitting. In this study, we grew GaN1−xSbx under conditions intended to induce... Read More about Intermixing studies in GaN_1−xSb_x highly mismatched alloys.

Hexagonal Boron Nitride Tunnel Barriers Grown on Graphite by High Temperature Molecular Beam Epitaxy (2016)
Journal Article
Cho, Y., Summerfield, A., Davies, A., Cheng, T. S., Smith, E. F., Mellor, C. J., …Novikov, S. V. (2016). Hexagonal Boron Nitride Tunnel Barriers Grown on Graphite by High Temperature Molecular Beam Epitaxy. Scientific Reports, 6(1), Article 34474. https://doi.org/10.1038/srep34474

We demonstrate direct epitaxial growth of high-quality hexagonal boron nitride (hBN) layers on graphite using high-temperature plasma-assisted molecular beam epitaxy. Atomic force microscopy reveals mono- and few-layer island growth, while conducting... Read More about Hexagonal Boron Nitride Tunnel Barriers Grown on Graphite by High Temperature Molecular Beam Epitaxy.

Growth of free-standing bulk wurtzite AlxGa1?xN layers by molecular beam epitaxy using a highly efficient RF plasma source (2016)
Journal Article
Novikov, S. V., Staddon, C. R., Sahonta, S., Oliver, R., Humphreys, C., & Foxon, C. (in press). Growth of free-standing bulk wurtzite AlxGa1?xN layers by molecular beam epitaxy using a highly efficient RF plasma source. Journal of Crystal Growth, https://doi.org/10.1016/j.jcrysgro.2016.07.038

The recent development of group III nitrides allows researchers world-wide to consider AlGaN based light emitting diodes as a possible new alternative deep ultra–violet light source for surface decontamination and water purification. In this paper we... Read More about Growth of free-standing bulk wurtzite AlxGa1?xN layers by molecular beam epitaxy using a highly efficient RF plasma source.

X-ray detection with zinc-blende (cubic) GaN Schottky diodes (2016)
Journal Article
Gohil, T., Whale, J., Lioliou, G., Novikov, S. V., Foxon, C., Kent, A., & Barnett, A. (2016). X-ray detection with zinc-blende (cubic) GaN Schottky diodes. Scientific Reports, 6, Article 29535. https://doi.org/10.1038/srep29535

The room temperature X-ray responses as functions of time of two n type cubic GaN Schottky diodes (200 μm and 400 μm diameters) are reported. The current densities as functions of time for both diodes showed fast turn-on transients and increases in c... Read More about X-ray detection with zinc-blende (cubic) GaN Schottky diodes.

Highly mismatched GaN1−xSbxalloys: synthesis, structure and electronic properties (2016)
Journal Article
Yu, K., Sarney, W., Novikov, S. V., Segercrantz, N., Ting, M., Shaw, M., …Foxon, C. (2016). Highly mismatched GaN1−xSbxalloys: synthesis, structure and electronic properties. Semiconductor Science and Technology, 31(8), https://doi.org/10.1088/0268-1242/31/8/083001

Highly mismatched alloys (HMAs) is a class of semiconductor alloys whose constituents are distinctly different in terms of size, ionicity and/or electronegativity. Electronic properties of the alloys deviate significantly from an interpolation scheme... Read More about Highly mismatched GaN1−xSbxalloys: synthesis, structure and electronic properties.

The UK National Quantum Technologies Hub in sensors and metrology (Keynote Paper) (2016)
Journal Article
Bongs, K., Boyer, V., Cruise, M., Freise, A., Holynski, M., Hughes, J., …John, P. (2016). The UK National Quantum Technologies Hub in sensors and metrology (Keynote Paper). Proceedings of SPIE, 9900, Article 990009. https://doi.org/10.1117/12.2232143

The UK National Quantum Technology Hub in Sensors and Metrology is one of four flagship initiatives in the UK National of Quantum Technology Program. As part of a 20-year vision it translates laboratory demonstrations to deployable practical devices,... Read More about The UK National Quantum Technologies Hub in sensors and metrology (Keynote Paper).

Characterization of p-GaN1?xAsx/n-GaN PN junction diodes (2016)
Journal Article
Qian, H., Lee, K., Vajargah, S., Novikov, S., Guiney, I., Zhang, S., …Houston, P. (2016). Characterization of p-GaN1−xAsx/n-GaN PN junction diodes. Semiconductor Science and Technology, 31(6), https://doi.org/10.1088/0268-1242/31/6/065020

The structural properties and electrical conduction mechanisms of p-type amorphous GaN1−xAsx/n-type crystalline GaN PN junction diodes are presented. A hole concentration of 8.5×1019 cm−3 is achieved which allows a specific contact resistance of 1.3×... Read More about Characterization of p-GaN1?xAsx/n-GaN PN junction diodes.

Surface acoustic wave velocity and elastic constants of cubic GaN (2016)
Journal Article
Riobóo, R. J. J., Cuscó, R., Prieto, C., Kopittke, C., Novikov, S. V., & Artús, L. (2016). Surface acoustic wave velocity and elastic constants of cubic GaN. Applied Physics Express, 9(6), Article 061001. https://doi.org/10.7567/APEX.9.061001

We present high-resolution surface Brillouin scattering measurements on cubic GaN layers grown on GaAs substrate. By using a suitable scattering geometry, scattering by surface acoustic waves is recorded for different azimuthal angles, and the surfac... Read More about Surface acoustic wave velocity and elastic constants of cubic GaN.

Strain-Engineered Graphene Grown on Hexagonal Boron Nitride by Molecular Beam Epitaxy (2016)
Journal Article
Summerfield, A., Davies, A., Cheng, T. S., Korolkov, V. V., Cho, Y., Mellor, C. J., …Beton, P. H. (2016). Strain-Engineered Graphene Grown on Hexagonal Boron Nitride by Molecular Beam Epitaxy. Scientific Reports, 6(1), Article 22440. https://doi.org/10.1038/srep22440

Graphene grown by high temperature molecular beam epitaxy on hexagonal boron nitride (hBN) forms continuous domains with dimensions of order 20 μm, and exhibits moiré patterns with large periodicities, up to ~30 nm, indicating that the layers are hig... Read More about Strain-Engineered Graphene Grown on Hexagonal Boron Nitride by Molecular Beam Epitaxy.

Molecular beam epitaxy of free-standing bulk wurtzite AlxGa1-xN layers using a highly efficient RF plasma source (2016)
Journal Article
Novikov, S. V., Staddon, C., Sahonta, S., Oliver, R., Humphreys, C., & Foxon, C. (2016). Molecular beam epitaxy of free-standing bulk wurtzite AlxGa1-xN layers using a highly efficient RF plasma source. physica status solidi (c), 13(5-6), https://doi.org/10.1002/pssc.201510166

Recent developments with group III nitrides suggest AlxGa1-xN based LEDs can be new alternative commer-cially viable deep ultra-violet light sources. Due to a sig-nificant difference in the lattice parameters of GaN and AlN, AlxGa1-xN substrates woul... Read More about Molecular beam epitaxy of free-standing bulk wurtzite AlxGa1-xN layers using a highly efficient RF plasma source.

Growth of free-standing wurtzite AlGaN by MBE using a highly efficient RF plasma source (2016)
Journal Article
Novikov, S. V., Staddon, C. R., Whale, J., Kent, A. J., & Foxon, C. T. (2016). Growth of free-standing wurtzite AlGaN by MBE using a highly efficient RF plasma source. Journal of Vacuum Science and Technology B Microelectronics and Nanometer Structures, 34(2), Article 02L102. https://doi.org/10.1116/1.4940155

Ultraviolet light emitting diodes (UV LEDs) are now being developed for various potential applications including water purification, surface decontamination, optical sensing, and solid-state lighting. The basis for this development is the successful... Read More about Growth of free-standing wurtzite AlGaN by MBE using a highly efficient RF plasma source.

High temperature MBE of graphene on sapphire and hexagonal boron nitride flakes on sapphire (2016)
Journal Article
Cheng, T. S., Davies, A., Summerfield, A., Cho, Y., Cebula, I., Hill, R. J., …Novikov, S. V. (2016). High temperature MBE of graphene on sapphire and hexagonal boron nitride flakes on sapphire. Journal of Vacuum Science and Technology B, 34(2), 02L101. https://doi.org/10.1116/1.4938157

The discovery of graphene and its remarkable electronic properties has provided scientists with a revolutionary material system for electronics and optoelectronics. Here, the authors investigate molecular beam epitaxy (MBE) as a growth method for gra... Read More about High temperature MBE of graphene on sapphire and hexagonal boron nitride flakes on sapphire.