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Precise tuning of the Curie temperature of (Ga,Mn)As-based magnetic semiconductors by hole compensation: Support for valence-band ferromagnetism (2016)
Journal Article
Zhou, S., Li, L., Yuan, Y., Rushforth, A., Chen, L., Wang, Y., …Helm, M. (2016). Precise tuning of the Curie temperature of (Ga,Mn)As-based magnetic semiconductors by hole compensation: Support for valence-band ferromagnetism. Physical Review B, 94(7), https://doi.org/10.1103/PhysRevB.94.075205

For the prototype diluted ferromagnetic semiconductor (Ga,Mn)As, there is a fundamental concern about the electronic states near the Fermi level, i.e., whether the Fermi level resides in a well-separated impurity band derived from Mn doping (impurity... Read More about Precise tuning of the Curie temperature of (Ga,Mn)As-based magnetic semiconductors by hole compensation: Support for valence-band ferromagnetism.

The UK National Quantum Technologies Hub in sensors and metrology (Keynote Paper) (2016)
Journal Article
Bongs, K., Boyer, V., Cruise, M., Freise, A., Holynski, M., Hughes, J., …John, P. (2016). The UK National Quantum Technologies Hub in sensors and metrology (Keynote Paper). Proceedings of SPIE, 9900, Article 990009. https://doi.org/10.1117/12.2232143

The UK National Quantum Technology Hub in Sensors and Metrology is one of four flagship initiatives in the UK National of Quantum Technology Program. As part of a 20-year vision it translates laboratory demonstrations to deployable practical devices,... Read More about The UK National Quantum Technologies Hub in sensors and metrology (Keynote Paper).

Three-dimensional Heisenberg critical behavior in the highly disordered dilute ferromagnetic semiconductor (Ga,Mn)As (2016)
Journal Article
Wang, M., Marshall, R. A., Edmonds, K. W., Rushforth, A., Campion, R., & Gallagher, B. (2016). Three-dimensional Heisenberg critical behavior in the highly disordered dilute ferromagnetic semiconductor (Ga,Mn)As. Physical Review B, 93(18), Article 184417. https://doi.org/10.1103/PhysRevB.93.184417

We present detailed studies of critical behavior in the strongly site-disordered dilute ferromagnetic semiconductor (Ga,Mn)As. (Ga,Mn)As has a low saturation magnetization and relatively strong magnetocrystalline anisotropy. This combination of prop... Read More about Three-dimensional Heisenberg critical behavior in the highly disordered dilute ferromagnetic semiconductor (Ga,Mn)As.

Intrinsic magnetic refrigeration of a single electron transistor (2016)
Journal Article
Ciccarelli, C., Campion, R., Gallagher, B., & Ferguson, A. (2016). Intrinsic magnetic refrigeration of a single electron transistor. Applied Physics Letters, 108(5), Article 053103. https://doi.org/10.1063/1.4941289

In this work, we show that aluminium doped with low concentrations of magnetic impurities can be used to fabricate quantum devices with intrinsic cooling capabilities. We fabricate single electron transistors made of aluminium doped with 2% Mn by usi... Read More about Intrinsic magnetic refrigeration of a single electron transistor.

Electrical switching of an antiferromagnet (2016)
Journal Article
Wadley, P., Howells, B., Železný, J., Andrews, C., Hills, V., Campion, R. P., …Jungwirth, T. (2016). Electrical switching of an antiferromagnet. Science, 351(6273), 587-590. https://doi.org/10.1126/science.aab1031

Antiferromagnets are hard to control by external magnetic fields because of the alternating directions of magnetic moments on individual atoms and the resulting zero net magnetization. However, relativistic quantum mechanics allows for generating cur... Read More about Electrical switching of an antiferromagnet.