All Outputs (6)

Hexagonal Boron Nitride Tunnel Barriers Grown on Graphite by High Temperature Molecular Beam Epitaxy (2016)
Journal Article
Cho, Y., Summerfield, A., Davies, A., Cheng, T. S., Smith, E. F., Mellor, C. J., …Novikov, S. V. (2016). Hexagonal Boron Nitride Tunnel Barriers Grown on Graphite by High Temperature Molecular Beam Epitaxy. Scientific Reports, 6(1), Article 34474. https://doi.org/10.1038/srep34474

We demonstrate direct epitaxial growth of high-quality hexagonal boron nitride (hBN) layers on graphite using high-temperature plasma-assisted molecular beam epitaxy. Atomic force microscopy reveals mono- and few-layer island growth, while conducting... Read More about Hexagonal Boron Nitride Tunnel Barriers Grown on Graphite by High Temperature Molecular Beam Epitaxy.

Naphthalocyanine Thin Films and Field Effect Transistors (2016)
Journal Article
Esmail, A. M. S., Staddon, C. R., & Beton, P. H. (2016). Naphthalocyanine Thin Films and Field Effect Transistors. Journal of Physical Chemistry C, 120(28), 15338-15341. https://doi.org/10.1021/acs.jpcc.6b06134

Naphthalocyanine (Nc) thin films have been grown by sublimation on SiO2. We have used atomic force microscopy and X-ray diffraction to show that the films are disordered for room temperature deposition, but show a highly crystalline needlelike morpho... Read More about Naphthalocyanine Thin Films and Field Effect Transistors.

Organisation and ordering of 1D porphyrin polymers synthesised by on-surface Glaser coupling (2016)
Journal Article
Saywell, A., Browning, A. S., Rahe, P., Anderson, H. L., & Beton, P. H. (2016). Organisation and ordering of 1D porphyrin polymers synthesised by on-surface Glaser coupling. Chemical Communications, 52(68), 10342-10345. https://doi.org/10.1039/C6CC03758E

One-dimensional polymer chains consisting of ?-conjugated porphyrin units are formed via Glaser coupling on a Ag(111) surface. Scanning probe microscopy reveals the covalent structure of the products and their ordering. The conformational flexibility... Read More about Organisation and ordering of 1D porphyrin polymers synthesised by on-surface Glaser coupling.

Quantum confinement and photoresponsivity of ?-In2Se3 nanosheets grown by physical vapour transport (2016)
Journal Article
Balakrishnan, N., Staddon, C. R., Smith, E. F., Stec, J., Gay, D., Mudd, G. W., …Beton, P. H. (in press). Quantum confinement and photoresponsivity of β-In2Se3 nanosheets grown by physical vapour transport. 2D Materials, 3(2), 1-8. https://doi.org/10.1088/2053-1583/3/2/025030

We demonstrate that β-In2Se3 layers with thickness ranging from 2.8 – 100 nm can be grown on SiO2/Si, mica and graphite using a physical vapour transport method. The β-In2Se3 layers are chemically stable at room temperature and exhibit a blue-shift o... Read More about Quantum confinement and photoresponsivity of ?-In2Se3 nanosheets grown by physical vapour transport.

Strain-Engineered Graphene Grown on Hexagonal Boron Nitride by Molecular Beam Epitaxy (2016)
Journal Article
Summerfield, A., Davies, A., Cheng, T. S., Korolkov, V. V., Cho, Y., Mellor, C. J., …Beton, P. H. (2016). Strain-Engineered Graphene Grown on Hexagonal Boron Nitride by Molecular Beam Epitaxy. Scientific Reports, 6(1), Article 22440. https://doi.org/10.1038/srep22440

Graphene grown by high temperature molecular beam epitaxy on hexagonal boron nitride (hBN) forms continuous domains with dimensions of order 20 μm, and exhibits moiré patterns with large periodicities, up to ~30 nm, indicating that the layers are hig... Read More about Strain-Engineered Graphene Grown on Hexagonal Boron Nitride by Molecular Beam Epitaxy.

High temperature MBE of graphene on sapphire and hexagonal boron nitride flakes on sapphire (2016)
Journal Article
Cheng, T. S., Davies, A., Summerfield, A., Cho, Y., Cebula, I., Hill, R. J., …Novikov, S. V. (2016). High temperature MBE of graphene on sapphire and hexagonal boron nitride flakes on sapphire. Journal of Vacuum Science and Technology B, 34(2), 02L101. https://doi.org/10.1116/1.4938157

The discovery of graphene and its remarkable electronic properties has provided scientists with a revolutionary material system for electronics and optoelectronics. Here, the authors investigate molecular beam epitaxy (MBE) as a growth method for gra... Read More about High temperature MBE of graphene on sapphire and hexagonal boron nitride flakes on sapphire.