New Bi-Mode Gate-Commutated Thyristor Design Concept for High-Current Controllability and Low ON-State Voltage Drop
(2016)
Journal Article
Lophitis, N., Antoniou, M., Vemulapati, U., Arnold, M., Nistor, I., Vobecky, J., …Udrea, F. (2016). New Bi-Mode Gate-Commutated Thyristor Design Concept for High-Current Controllability and Low ON-State Voltage Drop. IEEE Electron Device Letters, 37(4), 467-470. https://doi.org/10.1109/led.2016.2533572
© 2016 IEEE. A new design approach for bi-mode gatecommutated thyristors (BGCTs) is proposed for high-current controllability and low ON-state voltage drop. Using a complex multi-cell mixed-mode simulation model which can capture the maximum controll... Read More about New Bi-Mode Gate-Commutated Thyristor Design Concept for High-Current Controllability and Low ON-State Voltage Drop.