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Damage Evolution in Al Wire Bonds Subjected to a Junction Temperature Fluctuation of 30K (2016)
Journal Article
Agyakwa, P., Yang, L., Arjmand, E., Evans, P., Corfield, M., & Johnson, C. M. (2016). Damage Evolution in Al Wire Bonds Subjected to a Junction Temperature Fluctuation of 30K. Journal of Electronic Materials, 45, 3659-3672. https://doi.org/10.1007/s11664-016-4519-0

© 2016, The Author(s). Ultrasonically bonded heavy Al wires subjected to a small junction temperature fluctuation under power cycling from 40°C to 70°C were investigated using a non-destructive three-dimensional (3-D) x-ray tomography evaluation appr... Read More about Damage Evolution in Al Wire Bonds Subjected to a Junction Temperature Fluctuation of 30K.

SiC power MOSFETs performance, robustness and technology maturity (2016)
Journal Article
Castellazzi, A., Fayyaz, A., Romano, G., Yang, L., Riccio, M., & Irace, A. (2016). SiC power MOSFETs performance, robustness and technology maturity. Microelectronics Reliability, 58, https://doi.org/10.1016/j.microrel.2015.12.034

Relatively recently, SiC power MOSFETs have transitioned from being a research exercise to becoming an industrial reality. The potential benefits that can be drawn from this technology in the electrical energy conversion domain have been amply discus... Read More about SiC power MOSFETs performance, robustness and technology maturity.

Quantification of cracked area in thermal path of high-powermulti-chip modules using transient thermal impedance measurement (2016)
Journal Article
Eleffendi, M. A., Yang, L., Agyakwa, P., & Johnson, C. M. (2016). Quantification of cracked area in thermal path of high-powermulti-chip modules using transient thermal impedance measurement. Microelectronics Reliability, 59, https://doi.org/10.1016/j.microrel.2016.01.002

Transient thermal impedancemeasurement is commonly used to characterize the dynamic behaviour of the heat flowpath in power semiconductor packages. This can be used to derive a “structure function”which is a graphical representation of the internal s... Read More about Quantification of cracked area in thermal path of high-powermulti-chip modules using transient thermal impedance measurement.