All Outputs (5)

UIS failure mechanism of SiC power MOSFETs (2016)
Conference Proceeding
Fayyaz, A., Castellazzi, A., Romano, G., Riccio, M., Urresti, J., & Wright, N. (2016). UIS failure mechanism of SiC power MOSFETs.

This paper investigates the failure mechanism of SiC power MOSFETs during avalanche breakdown under unclamped inductive switching (UIS) test regime. Switches deployed within motor drive applications could experience undesired avalanche breakdown even... Read More about UIS failure mechanism of SiC power MOSFETs.

Body diode reliability investigation of SiC power MOSFETs (2016)
Journal Article
Fayyaz, A., Romano, G., & Castellazzi, A. (2016). Body diode reliability investigation of SiC power MOSFETs. Microelectronics Reliability, 64, 530-534. https://doi.org/10.1016/j.microrel.2016.07.044

A special feature of vertical power MOSFETs, in general, is the inbuilt body diode which could eliminate the need of having to use additional anti-parallel diodes for current freewheeling in industrial inverter applications: this, clearly, subject to... Read More about Body diode reliability investigation of SiC power MOSFETs.

Influence of design parameters on the short-circuit ruggedness of SiC Power MOSFETs (2016)
Conference Proceeding
Romano, G., Riccio, M., Maresca, L., Fayyaz, A., & Castellazzi, A. (in press). Influence of design parameters on the short-circuit ruggedness of SiC Power MOSFETs.

This work aims to present an investigation on short-circuit (SC) failure behaviour of SiC Power MOSFETs due to the onset of thermal runaway. As inferable from experimental outcomes, it is related to the formation of hotspot, whose exact location is m... Read More about Influence of design parameters on the short-circuit ruggedness of SiC Power MOSFETs.

A comprehensive study of the short-circuit ruggedness of silicon carbide power MOSFETs (2016)
Journal Article
Romano, G., Fayyaz, A., Riccio, M., Maresca, L., Breglio, G., Castellazzi, A., & Irace, A. (2016). A comprehensive study of the short-circuit ruggedness of silicon carbide power MOSFETs. IEEE Journal of Emerging and Selected Topics in Power Electronics, 4(3), 978-987. https://doi.org/10.1109/JESTPE.2016.2563220

The behavior of Silicon Carbide Power MOSFETs under stressful short circuit conditions is investigated in this paper. Illustration of two different short-circuit failure phenomena for Silicon Carbide Power MOSFETs are thoroughly reported. Experimenta... Read More about A comprehensive study of the short-circuit ruggedness of silicon carbide power MOSFETs.

SiC power MOSFETs performance, robustness and technology maturity (2016)
Journal Article
Castellazzi, A., Fayyaz, A., Romano, G., Yang, L., Riccio, M., & Irace, A. (2016). SiC power MOSFETs performance, robustness and technology maturity. Microelectronics Reliability, 58, https://doi.org/10.1016/j.microrel.2015.12.034

Relatively recently, SiC power MOSFETs have transitioned from being a research exercise to becoming an industrial reality. The potential benefits that can be drawn from this technology in the electrical energy conversion domain have been amply discus... Read More about SiC power MOSFETs performance, robustness and technology maturity.