All Outputs (6)

Precise tuning of the Curie temperature of (Ga,Mn)As-based magnetic semiconductors by hole compensation: Support for valence-band ferromagnetism (2016)
Journal Article
Zhou, S., Li, L., Yuan, Y., Rushforth, A., Chen, L., Wang, Y., …Helm, M. (2016). Precise tuning of the Curie temperature of (Ga,Mn)As-based magnetic semiconductors by hole compensation: Support for valence-band ferromagnetism. Physical Review B, 94(7), https://doi.org/10.1103/PhysRevB.94.075205

For the prototype diluted ferromagnetic semiconductor (Ga,Mn)As, there is a fundamental concern about the electronic states near the Fermi level, i.e., whether the Fermi level resides in a well-separated impurity band derived from Mn doping (impurity... Read More about Precise tuning of the Curie temperature of (Ga,Mn)As-based magnetic semiconductors by hole compensation: Support for valence-band ferromagnetism.

Contributions from coherent and incoherent lattice excitations to ultrafast optical control of magnetic anisotropy of metallic films (2016)
Journal Article
Kats, V. N., Linnik, T. L., Salasyuk, A. S., Rushforth, A. W., Wang, M., Wadley, P., …Scherbakov, A. V. (2016). Contributions from coherent and incoherent lattice excitations to ultrafast optical control of magnetic anisotropy of metallic films. Proceedings of SPIE, 9835(98351Q), https://doi.org/10.1117/12.2238020

Spin-lattice coupling is one of the most prominent interactions mediating response of spin ensemble to ultrafast optical excitation. Here we exploit optically generated coherent and incoherent phonons to drive coherent spin dynamics, i.e. precession,... Read More about Contributions from coherent and incoherent lattice excitations to ultrafast optical control of magnetic anisotropy of metallic films.

Ultrafast changes of magnetic anisotropy driven by laser-generated coherent and noncoherent phonons in metallic films (2016)
Journal Article
Kats, V., Linnik, T., Salasyuk, A., Rushforth, A., Wang, M., Wadley, P., …Scherbakov, A. (2016). Ultrafast changes of magnetic anisotropy driven by laser-generated coherent and noncoherent phonons in metallic films. Physical Review B, 93(21), Article 214422. https://doi.org/10.1103/PhysRevB.93.214422

Ultrafast optical excitation of a metal ferromagnetic film results in a modification of the magnetocrystalline anisotropy and induces the magnetization precession. We consider two main contributions to these processes: an effect of noncoherent phonon... Read More about Ultrafast changes of magnetic anisotropy driven by laser-generated coherent and noncoherent phonons in metallic films.

The UK National Quantum Technologies Hub in sensors and metrology (Keynote Paper) (2016)
Journal Article
Bongs, K., Boyer, V., Cruise, M., Freise, A., Holynski, M., Hughes, J., …John, P. (2016). The UK National Quantum Technologies Hub in sensors and metrology (Keynote Paper). Proceedings of SPIE, 9900, Article 990009. https://doi.org/10.1117/12.2232143

The UK National Quantum Technology Hub in Sensors and Metrology is one of four flagship initiatives in the UK National of Quantum Technology Program. As part of a 20-year vision it translates laboratory demonstrations to deployable practical devices,... Read More about The UK National Quantum Technologies Hub in sensors and metrology (Keynote Paper).

Three-dimensional Heisenberg critical behavior in the highly disordered dilute ferromagnetic semiconductor (Ga,Mn)As (2016)
Journal Article
Wang, M., Marshall, R. A., Edmonds, K. W., Rushforth, A., Campion, R., & Gallagher, B. (2016). Three-dimensional Heisenberg critical behavior in the highly disordered dilute ferromagnetic semiconductor (Ga,Mn)As. Physical Review B, 93(18), Article 184417. https://doi.org/10.1103/PhysRevB.93.184417

We present detailed studies of critical behavior in the strongly site-disordered dilute ferromagnetic semiconductor (Ga,Mn)As. (Ga,Mn)As has a low saturation magnetization and relatively strong magnetocrystalline anisotropy. This combination of prop... Read More about Three-dimensional Heisenberg critical behavior in the highly disordered dilute ferromagnetic semiconductor (Ga,Mn)As.

Electrical switching of an antiferromagnet (2016)
Journal Article
Wadley, P., Howells, B., Železný, J., Andrews, C., Hills, V., Campion, R. P., …Jungwirth, T. (2016). Electrical switching of an antiferromagnet. Science, 351(6273), 587-590. https://doi.org/10.1126/science.aab1031

Antiferromagnets are hard to control by external magnetic fields because of the alternating directions of magnetic moments on individual atoms and the resulting zero net magnetization. However, relativistic quantum mechanics allows for generating cur... Read More about Electrical switching of an antiferromagnet.