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Improving Current Controllability in Bi-Mode Gate Commutated Thyristors (2015)
Journal Article
Lophitis, N., Antoniou, M., Udrea, F., Vemulapati, U., Arnold, M., Nistor, I., …Rahimo, M. (2015). Improving Current Controllability in Bi-Mode Gate Commutated Thyristors. IEEE Transactions on Electron Devices, 62(7), 2263-2269. https://doi.org/10.1109/TED.2015.2428994

© 2015 IEEE. The Bi-mode gate commutated thyristor (BGCT) is a new type of reverse conducting Gate Commutated Thyristor (GCT). This paper focuses on the maximum controllable current capability of BGCTs and proposes new solutions which can increase it... Read More about Improving Current Controllability in Bi-Mode Gate Commutated Thyristors.

Novel Approach Toward Plasma Enhancement in Trench-Insulated Gate Bipolar Transistors (2015)
Journal Article
Antoniou, M., Lophitis, N., Bauer, F., Nistor, I., Bellini, M., Rahimo, M., …Udrea, F. (2015). Novel Approach Toward Plasma Enhancement in Trench-Insulated Gate Bipolar Transistors. IEEE Electron Device Letters, 36(8), 823-825. https://doi.org/10.1109/LED.2015.2433894

In this letter, a trench-insulated gate bipolar transistor (IGBT) design with local charge compensating layers featured at the cathode of the device is presented and analyzed. The superjunction or reduced surface effect proves to be very effective in... Read More about Novel Approach Toward Plasma Enhancement in Trench-Insulated Gate Bipolar Transistors.