All Outputs (5)

Comparison of micromagnetic parameters of the ferromagnetic semiconductors (Ga,Mn)(As,P) and (Ga,Mn)As (2014)
Journal Article
Tesařová, N., Butkovičová, D., Campion, R. P., Rushforth, A. W., Edmonds, K. W., Wadley, P., …Němec, P. (2014). Comparison of micromagnetic parameters of the ferromagnetic semiconductors (Ga,Mn)(As,P) and (Ga,Mn)As. Physical review B: Condensed matter and materials physics, 90(15), Article 155203. https://doi.org/10.1103/physrevb.90.155203

We report on the determination of micromagnetic parameters of epilayers of the ferromagnetic semiconductor (Ga,Mn)As, which has an easy axis in the sample plane, and (Ga,Mn)(As,P), which has an easy axis perpendicular to the sample plane.We use an op... Read More about Comparison of micromagnetic parameters of the ferromagnetic semiconductors (Ga,Mn)(As,P) and (Ga,Mn)As.

Relativistic Neel-Order Fields Induced by Electrical Current in Antiferromagnets (2014)
Journal Article
Železný, J., Gao, H., Výborný, K., Zemen, J., Mašek, J., Manchon, A., …Jungwirth, T. (2014). Relativistic Neel-Order Fields Induced by Electrical Current in Antiferromagnets. Physical Review Letters, 113(15), Article 157201. https://doi.org/10.1103/PhysRevLett.113.157201

We predict that a lateral electrical current in antiferromagnets can induce nonequilibrium Néel-order fields, i.e., fields whose sign alternates between the spin sublattices, which can trigger ultrafast spin-axis reorientation. Based on microscopic t... Read More about Relativistic Neel-Order Fields Induced by Electrical Current in Antiferromagnets.

Anisotropic magnetoresistance in an antiferromagnetic semiconductor (2014)
Journal Article
Fina, I., Marti, X., Yi, D., Liu, J., Chu, J. H., Rayan-Serrao, C., …Ramesh, R. (2014). Anisotropic magnetoresistance in an antiferromagnetic semiconductor. Nature Communications, 5, Article 4671. https://doi.org/10.1038/ncomms5671

Recent studies in devices comprising metal antiferromagnets have demonstrated the feasibility of a novel spintronic concept in which spin-dependent phenomena are governed by an antiferromagnet instead of a ferromagnet. Here we report experimental obs... Read More about Anisotropic magnetoresistance in an antiferromagnetic semiconductor.

An antidamping spin–orbit torque originating from the Berry curvature (2014)
Journal Article
Kurebayashi, H., Sinova, J., Fang, D., Irvine, A. C., Skinner, T. D., Wunderlich, J., …Jungwirth, T. (2014). An antidamping spin–orbit torque originating from the Berry curvature. Nature Nanotechnology, 9(3), 211-217. https://doi.org/10.1038/nnano.2014.15

Magnetization switching at the interface between ferromagnetic and paramagnetic metals, controlled by current-induced torques, could be exploited in magnetic memory technologies. Compelling questions arise regarding the role played in the switching b... Read More about An antidamping spin–orbit torque originating from the Berry curvature.

Room-temperature antiferromagnetic memory resistor (2014)
Journal Article
Marti, X., Fina, I., Frontera, C., Liu, J., Wadley, P., He, Q., …Ramesh, R. (2014). Room-temperature antiferromagnetic memory resistor. Nature Materials, 13(4), 367-374. https://doi.org/10.1038/nmat3861

The bistability of ordered spin states in ferromagnets provides the basis for magnetic memory functionality. The latest generation of magnetic random access memories rely on an efficient approach in which magnetic fields are replaced by electrical me... Read More about Room-temperature antiferromagnetic memory resistor.