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Single pulse avalanche robustness and repetitive stress ageing of SiC power MOSFETs (2014)
Journal Article
Fayyaz, A., Yang, L., Riccio, M., Castellazzi, A., & Irace, A. (2014). Single pulse avalanche robustness and repetitive stress ageing of SiC power MOSFETs. Microelectronics Reliability, 54(9-10), 2185-2190. https://doi.org/10.1016/j.microrel.2014.07.078

This paper presents an extensive electro-thermal characterisation of latest generation silicon carbide (SiC) Power MOSFETs under unclamped inductive switching (UIS) conditions. Tests are carried out to thoroughly understand the single pulse avalanche... Read More about Single pulse avalanche robustness and repetitive stress ageing of SiC power MOSFETs.