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Single pulse avalanche robustness and repetitive stress ageing of SiC power MOSFETs (2014)
Journal Article
Fayyaz, A., Yang, L., Riccio, M., Castellazzi, A., & Irace, A. (2014). Single pulse avalanche robustness and repetitive stress ageing of SiC power MOSFETs. Microelectronics Reliability, 54(9-10), 2185-2190. https://doi.org/10.1016/j.microrel.2014.07.078

This paper presents an extensive electro-thermal characterisation of latest generation silicon carbide (SiC) Power MOSFETs under unclamped inductive switching (UIS) conditions. Tests are carried out to thoroughly understand the single pulse avalanche... Read More about Single pulse avalanche robustness and repetitive stress ageing of SiC power MOSFETs.

Built-in reliability design of highly integrated solid-state power switches with metal bump interconnects (2014)
Journal Article
Li, J., Castellazzi, A., Dai, T., Corfield, M., Solomon, A. K., & Johnson, C. M. (2015). Built-in reliability design of highly integrated solid-state power switches with metal bump interconnects. IEEE Transactions on Power Electronics, 30(5), https://doi.org/10.1109/TPEL.2014.2357334

A stacked substrate–chip–bump–chip–substrate assembly has been demonstrated in the construction of power switch modules with high power density and good electrical performance. In this paper, special effort has been devoted to material selection and... Read More about Built-in reliability design of highly integrated solid-state power switches with metal bump interconnects.

Robust snubberless soft-switching power converter using SiC power MOSFETs and bespoke thermal design (2014)
Journal Article
Giuliani, F., Dipankar, D., Delmonte, N., Castellazzi, A., & Cova, P. (2014). Robust snubberless soft-switching power converter using SiC power MOSFETs and bespoke thermal design. Microelectronics Reliability, 54(9-10), https://doi.org/10.1016/j.microrel.2014.07.057

A number of harsh-environment high-reliability applications are undergoing substantial electrification. The converters operating in such systems need to be designed to meet both stringent performance and reliability requirements. Semiconductor device... Read More about Robust snubberless soft-switching power converter using SiC power MOSFETs and bespoke thermal design.

Overload robust IGBT design for SSCB application (2014)
Journal Article
Supono, I., Urresti, J., Castellazzi, A., & Flores, D. (in press). Overload robust IGBT design for SSCB application. Microelectronics Reliability, 54(9/10), https://doi.org/10.1016/j.microrel.2014.07.146

This paper presents an optimised power semiconductor architecture based on the CIGBT approach to be used in solid-state circuit breaker (SSCB) applications where the conduction losses have to be as low as possible without compromising the forward vol... Read More about Overload robust IGBT design for SSCB application.

Built-in reliability design of a high-frequency SiC MOSFET power module (2014)
Conference Proceeding
Li, J., Gurpinar, E., Lopez Arevalo, S., Castellazzi, A., & Mills, L. (in press). Built-in reliability design of a high-frequency SiC MOSFET power module.

A high frequency SiC MOSFET-based three-phase, 2-level power module has been designed, simulated, assembled and tested. The design followed a built-in reliability approach, involving extensive finite-element simulation based analysis of the electro-t... Read More about Built-in reliability design of a high-frequency SiC MOSFET power module.

Integrated Half-Bridge Switch Using 70- ?m-Thin Devices and Hollow Interconnects (2014)
Journal Article
Solomon, A. K., Li, J., Castellazzi, A., & Johnson, C. M. (2015). Integrated Half-Bridge Switch Using 70- ?m-Thin Devices and Hollow Interconnects. IEEE Transactions on Industry Applications, 51(1), 556-566. https://doi.org/10.1109/TIA.2014.2334734

An application-oriented integration concept for a half-bridge switch assembly has been developed based on the latest generation 70- ?m-thin insulated gate bipolar transistors and diodes, which are rated at 600 V/200 A. This paper addresses the design... Read More about Integrated Half-Bridge Switch Using 70- ?m-Thin Devices and Hollow Interconnects.

Testing of a lightweight SiC power module for avionic applications (2014)
Conference Proceeding
Gurpinar, E., Lopez Arevalo, S., Li, J., De, D., Castellazzi, A., & Mills, L. (in press). Testing of a lightweight SiC power module for avionic applications.

Functional and performance tests of a three-phase, two-level power module based on CREE 1.2kV SiC MOSFETs for avionic applications is presented in this paper. SiC devices have superior properties over conventional Si devices at high voltage operation... Read More about Testing of a lightweight SiC power module for avionic applications.

Experimental and analytical performance evaluation of SiC power devices in the matrix converter (2014)
Journal Article
Safari, S., Castellazzi, A., & Wheeler, P. (2014). Experimental and analytical performance evaluation of SiC power devices in the matrix converter. IEEE Transactions on Power Electronics, 29(5), https://doi.org/10.1109/TPEL.2013.2289746

With the commercial availability of SiC power devices, their acceptance is expected grows in consideration to the excellent low switching loss, high temperature operation and high voltage rating capabilities of these devices. This paper presents the... Read More about Experimental and analytical performance evaluation of SiC power devices in the matrix converter.