All Outputs (2)

Gate commutated thyristor with voltage independent maximum controllable current (2013)
Journal Article
Lophitis, N., Antoniou, M., Udrea, F., Nistor, I., Rahimo, {. T., Arnold, M., …Vobecky, J. (2013). Gate commutated thyristor with voltage independent maximum controllable current. IEEE Electron Device Letters, 34(8), 954--956. https://doi.org/10.1109/LED.2013.2267552

In this letter, we use a novel 3-D model, earlier calibrated with experimental results on standard gate commutated thyristors (GCTs), with the aim to explain the physics behind the high-power technology (HPT) GCT, to investigate what impact this desi... Read More about Gate commutated thyristor with voltage independent maximum controllable current.

The destruction mechanism in GCTs (2013)
Journal Article
Lophitis, N., Antoniou, M., Udrea, F., Bauer, F. D., Nistor, I., Arnold, M., …Vobecky, J. (2013). The destruction mechanism in GCTs. IEEE Transactions on Electron Devices, 60(2), 819-826. https://doi.org/10.1109/TED.2012.2235442

This paper focuses on the causes that lead to the final destruction in standard gate-commutated thyristor (GCT) devices. A new 3-D model approach has been used for simulating the GCT which provides a deep insight into the operation of the GCT in extr... Read More about The destruction mechanism in GCTs.