All Outputs (4)

IEEE VTS Motor Vehicles Challenge 2024 - Energy and Powertrain Losses Management of an e-Racing Vehicle (2023)
Conference Proceeding
Li, K., & Vo-Duy, T. (2023). IEEE VTS Motor Vehicles Challenge 2024 - Energy and Powertrain Losses Management of an e-Racing Vehicle. In 2023 IEEE Vehicle Power and Propulsion Conference (VPPC). https://doi.org/10.1109/vppc60535.2023.10403256

Motor Vehicle Challenge, supported by IEEE Vehicular Technology Society, is an annual activity to find an appropriate energy management strategy to improve electric vehicles’ performance. In Challenge 2024, power losses and efficiency of power conver... Read More about IEEE VTS Motor Vehicles Challenge 2024 - Energy and Powertrain Losses Management of an e-Racing Vehicle.

N-level GaN Transistor Model for Fast Simulation of Electric Vehicle based Power Electronics Systems (2023)
Conference Proceeding
Eckstein, M., & Li, K. (2023). N-level GaN Transistor Model for Fast Simulation of Electric Vehicle based Power Electronics Systems. In 2022 IEEE Vehicle Power and Propulsion Conference (VPPC). https://doi.org/10.1109/VPPC55846.2022.10003315

Accurate and fast power loss estimation models based on a good understanding of the occuring loss mechanisms are crucial to achieve high efficiency, high power density and to take full advantage of the superior characteristics of Gallium Nitride (GaN... Read More about N-level GaN Transistor Model for Fast Simulation of Electric Vehicle based Power Electronics Systems.

An improved SiC-MOSFET model with focus on internal stray inductance and body diode stored charge for switching transients (2022)
Conference Proceeding
Radu, C., Li, K., Igic, P., Shepherd, S., Wörndle, A., van der Broeck, C. H., & Faramehr, S. (2022). An improved SiC-MOSFET model with focus on internal stray inductance and body diode stored charge for switching transients. In 2022 IEEE Workshop on Wide Bandgap Power Devices and Applications in Europe (WiPDA Europe) (1-6). https://doi.org/10.1109/WiPDAEurope55971.2022.9936259

Accurate switching transients modelling is important for SiC power converter layout optimisation. A SiC-MOSFET manufacturer model is used as a reference. Although the manufacturer model correctly represents device output and capacitance characteristi... Read More about An improved SiC-MOSFET model with focus on internal stray inductance and body diode stored charge for switching transients.

Influence of Current Collapse due to Vds Bias Effect on GaN-HEMTs Id-Vds Characteristics in Saturation Region (2022)
Conference Proceeding
Lu, X., Videt, A., Li, K., Idir, N., & al., E. (2022). Influence of Current Collapse due to Vds Bias Effect on GaN-HEMTs Id-Vds Characteristics in Saturation Region.

A new method is proposed in this paper to investigate the influence of current collapse effect on the Id-Vds characteristics of GaN-HEMTs in high voltage region based on a modified H-bridge circuit. The measured Id-Vds characteristics with and witho... Read More about Influence of Current Collapse due to Vds Bias Effect on GaN-HEMTs Id-Vds Characteristics in Saturation Region.