All Outputs (3)

Nanoscale characterisation of MBE-grown GaMnN / (001) GaAs (2008)
Book Chapter
Fay, M. W., Han, Y., Novikov, S. V., Edmonds, K., Gallagher, B., Campion, R., …Brown, P. D. (2008). Nanoscale characterisation of MBE-grown GaMnN / (001) GaAs. In A. Cullis, & P. Midgley (Eds.), Microscopy of semiconducting materials 2007: proceedings of the 15th conference, 2-5 April 2007, Cambridge, UK. Springer-Verlag

The growth of cubic (Ga,Mn)N/(001)GaAs heterostructures by plasma assisted molecular beam epitaxy has been appraised as a function of Ga:N ratio, Mn concentration and growth temperature. The combined analytical techniques of EFTEM, EDX, CBED and dark... Read More about Nanoscale characterisation of MBE-grown GaMnN / (001) GaAs.

Structural characterisation of spintronic GaMnAs and GaMnN heterostructures grown by molecular beam epitaxy (2005)
Book Chapter
Fay, M. W., Han, Y., Novikov, S. V., Edmonds, K., Wang, K., Gallagher, B., …Brown, P. D. (2005). Structural characterisation of spintronic GaMnAs and GaMnN heterostructures grown by molecular beam epitaxy. In A. Cullis, & A. Hutchison (Eds.), Microscopy of semiconducting materials: proceedings of the 14th conference: April 11-14, 2005, Oxford, UK. Springer-Verlag

Observations of orthogonal orientations demonstrate the development of banded contrast features on inclined {-1-1-1}B planes for the [110] projection within micron thick samples, attributed to a compositional fluctuation in the Mn content. The relat... Read More about Structural characterisation of spintronic GaMnAs and GaMnN heterostructures grown by molecular beam epitaxy.

Structural characterisation of MBE grown zinc-blende Ga1-xMnxN/GaAs(001) as a function of Ga flux (2005)
Book Chapter
Han, Y., Fay, M. W., Brown, P. D., Novikov, S. V., Edmonds, K., Gallagher, B., …Foxon, C. (2005). Structural characterisation of MBE grown zinc-blende Ga1-xMnxN/GaAs(001) as a function of Ga flux. In A. Cullis, & J. Hutchison (Eds.), Microscopy of semiconducting materials: proceedings of the 14th conference: April 11-14, 2005, Oxford, UK. Springer-Verlag

Ga1-xMnxN films grown on semi-insulating GaAs(001) substrates at 680°C with fixed Mn flux and varied Ga flux demonstrated a transition from zinc-blende/wurtzite mixed phase growth for low Ga flux (N-rich conditions) to zinc-blende single phase growth... Read More about Structural characterisation of MBE grown zinc-blende Ga1-xMnxN/GaAs(001) as a function of Ga flux.