Performance Improvement of >10kV SiC IGBTs with Retrograde p-Well
(2019)
Conference Proceeding
Tiwari, A. K., Antoniou, M., Lophitis, N., Perkins, S., Trajkovic, T., Trajkovic, T., & Udrea, F. (2019). Performance Improvement of >10kV SiC IGBTs with Retrograde p-Well. In P. M. Gammon, V. A. Shah, R. A. McMahon, M. R. Jennings, O. Vavasour, P. A. Mawby, & F. Padfield (Eds.), Proceedings of 12th European Conference on Silicon Carbide and Related Materials (ECSCRM 2018) (639-642). https://doi.org/10.4028/www.scientific.net/MSF.963.639
A p-well consisting of a retrograde doping profile is investigated for performance improvement of >10kV SiC IGBTs. The retrograde p-well, which can be realized using low-energy shallow implants, effectively addresses the punch-through, a common issue... Read More about Performance Improvement of >10kV SiC IGBTs with Retrograde p-Well.