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SiC-based Triple Active Bridge Converter for Shipboard Micro-grid Applications with Efficient Energy Storage (2018)
Conference Proceeding
Wang, Z., & Castellazzi, A. (2018). SiC-based Triple Active Bridge Converter for Shipboard Micro-grid Applications with Efficient Energy Storage. https://doi.org/10.1109/ISGWCP.2018.8634456

Silicon Carbide (SiC) MOSFET power module has became commercially available in the past few years, and it is attractive in dual/triple active bridge converters to replace conventional Si-IGBTs. The capability to connect with the energy storage system... Read More about SiC-based Triple Active Bridge Converter for Shipboard Micro-grid Applications with Efficient Energy Storage.

Comprehensive design optimization of a wind power converter using SiC technology (2018)
Conference Proceeding
Hussein, A., & Castellazzi, A. (2018). Comprehensive design optimization of a wind power converter using SiC technology. In 2018 International Conference on Smart Grid (icSmartGrid). https://doi.org/10.1109/ISGWCP.2018.8634431

This paper proposes the joint electro-magnetic and electro-thermal design optimization of a three-phase two-level voltage-source inverter, referring to the specific operational conditions of wind power conversion applications. The reference power lev... Read More about Comprehensive design optimization of a wind power converter using SiC technology.

Variable frequency control and filter design for optimum energy extraction from a SiC wind inverter (2018)
Conference Proceeding
Hussein, A., & Castellazzi, A. (2018). Variable frequency control and filter design for optimum energy extraction from a SiC wind inverter. In 2018 International Power Electronics Conference (IPEC-Niigata 2018 -ECCE Asia) (2932-2937). https://doi.org/10.23919/IPEC.2018.8507493

This paper proposes the optimised control and filter design of a 12 kW 3-phase 2-level wind inverter specifically taking into account the intermittent nature of the input power. In particular, the applied control scheme aims at optimising the low-loa... Read More about Variable frequency control and filter design for optimum energy extraction from a SiC wind inverter.

VTH subthreshold hysteresis technology and temperature dependence in commercial 4H-SiC MOSFETs (2018)
Journal Article
Asllani, B., Fayyaz, A., Castellazzi, A., Morel, H., & Planson, D. (2018). VTH subthreshold hysteresis technology and temperature dependence in commercial 4H-SiC MOSFETs. Microelectronics Reliability, 88-90, 604-609. https://doi.org/10.1016/j.microrel.2018.06.047

VTH subthreshold hysteresis measured in commercially available 4H-SiC MOSFET is more pronounced in trench than in planar ones. All planar devices from different manufacturers exhibit an inverse temperature dependence, with the hysteresis amplitude re... Read More about VTH subthreshold hysteresis technology and temperature dependence in commercial 4H-SiC MOSFETs.

Avalanche ruggedness of parallel SiC power MOSFETs (2018)
Journal Article
Fayyaz, A., Asllani, B., Castellazzi, A., Riccio, M., & Irace, A. (2018). Avalanche ruggedness of parallel SiC power MOSFETs. Microelectronics Reliability, 88-90, 666-670. https://doi.org/10.1016/j.microrel.2018.06.038

© 2018 Elsevier Ltd The aim of this paper is to investigate the impact of electro-thermal device parameter spread on the avalanche ruggedness of parallel silicon carbide (SiC) power MOSFETs representative of multi-chip layout within an integrated pow... Read More about Avalanche ruggedness of parallel SiC power MOSFETs.

Analysis of device and circuit parameters variability in SiC MOSFETs-based multichip power module (2018)
Conference Proceeding
Riccio, M., Borghese, A., Romano, G., D 'alessandro, V., Fayyaz, A., Castellazzi, A., …Irace, A. (2018). Analysis of device and circuit parameters variability in SiC MOSFETs-based multichip power module. In Power Electronics and Applications (EPE'18 ECCE Europe), 2018 20th European Conference

In this contribution, a previously developed temperature-dependent SPICE model for SiC power MOSFETs is calibrated on experimental data of commercially available devices. Thereafter, its features are exploited for dynamic ET simulations of paralleled... Read More about Analysis of device and circuit parameters variability in SiC MOSFETs-based multichip power module.

Experimentally validated methodology for real-time temperature cycle tracking in SiC power modules (2018)
Journal Article
Stella, F., Olanrewaju, O., Yang, Z., Castellazzi, A., & Pellegrino, G. (2018). Experimentally validated methodology for real-time temperature cycle tracking in SiC power modules. Microelectronics Reliability, 88-90, 615-619. https://doi.org/10.1016/j.microrel.2018.07.072

© 2018 Elsevier Ltd The ability to monitor temperature variations during the actual operation of power modules is key to reliability investigations and the development of lifetime prediction strategies. This paper proposes an original solution, speci... Read More about Experimentally validated methodology for real-time temperature cycle tracking in SiC power modules.

GaN transistors efficient cooling by graphene foam (2018)
Journal Article
Antonini, M., Cova, P., Delmonte, N., & Castellazzi, A. (2018). GaN transistors efficient cooling by graphene foam. Microelectronics Reliability, 88-90, 812-816. https://doi.org/10.1016/j.microrel.2018.07.004

© 2018 Elsevier Ltd Graphene conductive foams have shown very high potential as cooling material in electronic systems. Its exploitation with discrete GaN transistors is demonstrated in this paper. A proper experimental setup is developed to extract... Read More about GaN transistors efficient cooling by graphene foam.

Multi-Chip SiC MOSFET Power Modules for Standard Manufacturing, Mounting and Cooling (2018)
Conference Proceeding
Castellazzi, A., Fayyaz, A., Gurpinar, E., Hussein, A., Li, J., & Mouawad, B. (2018). Multi-Chip SiC MOSFET Power Modules for Standard Manufacturing, Mounting and Cooling. In The 2018 International Power Electronics Conference - EECE Asia - IPEC 2018 (130-136). https://doi.org/10.23919/IPEC.2018.8507834

Taking full advantage of the superior characteristics of SiC Power MOSFETs in the application requires the development of bespoke packaging solutions. Their design needs to thoroughly encompass electromagnetic and electro-thermal aspects to yield maj... Read More about Multi-Chip SiC MOSFET Power Modules for Standard Manufacturing, Mounting and Cooling.