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Electrical and thermal failure modes of 600 V p-gate GaN HEMTs (2017)
Journal Article
Oeder, T., Castellazzi, A., & Pfost, M. (2017). Electrical and thermal failure modes of 600 V p-gate GaN HEMTs. Microelectronics Reliability, 76-77, https://doi.org/10.1016/j.microrel.2017.06.046

A study of electrical and thermal failure modes of 600 V p-doped GaN HEMTs is presented, which focuses on the investigation of short-circuit limitations. The electrical failure mode seems to be an electrical field breakdown in the structure which is... Read More about Electrical and thermal failure modes of 600 V p-gate GaN HEMTs.