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Silicon Carbide n-IGBTs: Structure Optimization for Ruggedness Enhancement (2024)
Journal Article
Almpanis, I., Antoniou, M., Evans, P., Empringham, L., Gammon, P., Undrea, F., …Lophitis, N. (2024). Silicon Carbide n-IGBTs: Structure Optimization for Ruggedness Enhancement. IEEE Transactions on Industry Applications, https://doi.org/10.1109/tia.2024.3354870

In recent years, silicon carbide (SiC) based devices are increasingly replacing their silicon counterparts in power conversion applications due to their performance superiority. SiC insulated-gate bipolar transistors are particularly interesting as t... Read More about Silicon Carbide n-IGBTs: Structure Optimization for Ruggedness Enhancement.

10kV+ Rated SiC n-IGBTs: Novel Collector-Side Design Approach Breaking the Trade-Off between dV/dt and Device Efficiency (2023)
Journal Article
Almpanis, I., Evans, P., Antoniou, M., Gammon, P., Empringham, L., Undrea, F., …Lophitis, N. (2023). 10kV+ Rated SiC n-IGBTs: Novel Collector-Side Design Approach Breaking the Trade-Off between dV/dt and Device Efficiency. Key Engineering Materials, 946, 125-133. https://doi.org/10.4028/p-21h5lt

10kV+ rated 4H- Silicon Carbide (SiC) Insulated Gate Bipolar Transistors (IGBTs) have the potential to become the devices of choice in future Medium Voltage (MV) and High Voltage (HV) power converters. However, one significant performance concern of... Read More about 10kV+ Rated SiC n-IGBTs: Novel Collector-Side Design Approach Breaking the Trade-Off between dV/dt and Device Efficiency.

On the 3C-SiC/SiO2 n-MOS interface and the creation of a calibrated model for the Electrons' Inversion Layer Mobility covering a wide range of operating temperatures and applied gate voltage (2022)
Conference Proceeding
Lophitis, N., Arvanitopoulos, A., Jennings, M. R., Mawby, P. A., & Antoniou, M. (2022). On the 3C-SiC/SiO2 n-MOS interface and the creation of a calibrated model for the Electrons' Inversion Layer Mobility covering a wide range of operating temperatures and applied gate voltage. In 2022 IEEE Workshop on Wide Bandgap Power Devices and Applications in Europe (WiPDA Europe). https://doi.org/10.1109/WiPDAEurope55971.2022.9936319

Cubic (3C-) silicon carbide (SiC) metal oxide semiconductor (MOS) devices have the potential to achieve superior performance and reliability. The effective channel mobility can be significantly higher compared to other SiC polytypes due to the smalle... Read More about On the 3C-SiC/SiO2 n-MOS interface and the creation of a calibrated model for the Electrons' Inversion Layer Mobility covering a wide range of operating temperatures and applied gate voltage.

Influence of Emitter Side Design on the Unintentional Turn-on of 10kV+ SiC n-IGBTs (2022)
Conference Proceeding
Almpanis, I., Antoniou, M., Evans, P., Empringham, L., Gammon, P., Udrea, F., …Lophitis, N. (2022). Influence of Emitter Side Design on the Unintentional Turn-on of 10kV+ SiC n-IGBTs. In 2022 IEEE Energy Conversion Congress and Exposition (ECCE). https://doi.org/10.1109/ecce50734.2022.9947492

Silicon Carbide (SiC) N-channel Insulated Gate Bipolar Transistors (n-IGBTs) rated higher than 10kV can improve Medium Voltage and High Voltage power electronics due to the favourable combination of SiC material with the nIGBT device structure. This... Read More about Influence of Emitter Side Design on the Unintentional Turn-on of 10kV+ SiC n-IGBTs.

Short-Circuit Performance Investigation of 10kV+ Rated SiC n-IGBT (2022)
Conference Proceeding
Almpanis, I., Gammon, P., Mawby, P., Evans, P., Empringham, L., Lophitis, N., …Udrea, F. (2022). Short-Circuit Performance Investigation of 10kV+ Rated SiC n-IGBT. In IEEE Workshop on Wide Bandgap Power Devices and Applications in Europe (WiPDA-Europe). https://doi.org/10.1109/WiPDAEurope55971.2022.9936475

This paper presents a comprehensive short-circuit robustness investigation of 4H- Silicon Carbide (SiC) n-type Insulated Gate Bipolar Transistors (nIGBTs) for Medium-Voltage and High- Voltage applications. Numerical electrothermal TCAD simulations ev... Read More about Short-Circuit Performance Investigation of 10kV+ Rated SiC n-IGBT.

On the 3C-SiC/SiO 2 n-MOS interface and the creation of a calibrated model for the Electrons' Inversion Layer Mobility covering a wide range of operating temperatures and applied gate voltage (2022)
Conference Proceeding
Lophitis, N., Arvanitopoulos, A., Jennings, M. R., Mawby, P. A., & Antoniou, M. (2022). On the 3C-SiC/SiO 2 n-MOS interface and the creation of a calibrated model for the Electrons' Inversion Layer Mobility covering a wide range of operating temperatures and applied gate voltage. . https://doi.org/10.1109/WiPDAEurope55971.2022.9936319

Cubic (3C-) silicon carbide (SiC) metal oxide semiconductor (MOS) devices have the potential to achieve superior performance and reliability. The effective channel mobility can be significantly higher compared to other SiC polytypes due to the smalle... Read More about On the 3C-SiC/SiO 2 n-MOS interface and the creation of a calibrated model for the Electrons' Inversion Layer Mobility covering a wide range of operating temperatures and applied gate voltage.

The optimisation of a 15 kV 4H-silicon carbide integrated gate commutated thyristor (2022)
Conference Proceeding
Cao, Q., Gammon, P. M., Renz, A. B., Zhang, L., Baker, G., Antoniou, M., & Lophitis, N. (2022). The optimisation of a 15 kV 4H-silicon carbide integrated gate commutated thyristor. In 2022 IEEE Workshop on Wide Bandgap Power Devices and Applications in Europe (WiPDA Europe). https://doi.org/10.1109/WiPDAEurope55971.2022.9936508

A 15kV SiC thyristor is analysed, considering for the first time the design properties that will ensure the safe, stable operation of the device as an integrated gate commutated thyristor (IGCT), while also minimizing its on-state losses. Key to the... Read More about The optimisation of a 15 kV 4H-silicon carbide integrated gate commutated thyristor.

An experimentally driven assessment of the dynamic-on resistance in correlation to other performance indicators in commercial Gallium Nitride power devices (2022)
Conference Proceeding
Lophitis, N., Perkins, S., Arvanitopoulos, A., Faramehr, S., & Igic, P. (2022). An experimentally driven assessment of the dynamic-on resistance in correlation to other performance indicators in commercial Gallium Nitride power devices. In 2022 IEEE Workshop on Wide Bandgap Power Devices and Applications in Europe (WiPDA Europe). https://doi.org/10.1109/WiPDAEurope55971.2022.9936253

This work provides an experimentally driven performance comparison of commercial Gallium Nitride on Silicon (GaN-on-Si) power devices rated 600-650V at room and elevated temperatures with the focus being in assessing the on resistance (RON) increase... Read More about An experimentally driven assessment of the dynamic-on resistance in correlation to other performance indicators in commercial Gallium Nitride power devices.

Gate-Commutated Thyristor cell with a base region having a varying thickness (2022)
Patent
Vemulapati, U., Lophitis, N., Vobecky, J., Udrea, F., Stiasny, T., Corvasce, C., & Antoniou, M. (2022). Gate-Commutated Thyristor cell with a base region having a varying thickness. EP4053915A1. European Patent Office

A power semiconductor device (1) comprises a gate-commutated thyristor cell (20) including a cathode electrode (2), a cathode region (9) of a first conductivity type, a base layer (8) of a second conductivity type, a drift layer (7) of the first cond... Read More about Gate-Commutated Thyristor cell with a base region having a varying thickness.

Investigations of Short Circuit Robustness of SiC IGBTs with Considerations on Physics Properties and Design (2022)
Journal Article
Zhang, L. Y., Dai, T. X., Gammon, P. M., Lophitis, N., Udrea, F., Tiwari, A., …Antoniou, M. (2022). Investigations of Short Circuit Robustness of SiC IGBTs with Considerations on Physics Properties and Design. Materials Science Forum, 1062, 504-508. https://doi.org/10.4028/p-13z22g

The commercial success of silicon carbide (SiC) diodes and MOSFETs for the automotive industry has led many in the field to begin developing ultra-high voltage (UHV) SiC insulated gate bipolar transistors (IGBTs), rated from 6 kV to 30 kV, for future... Read More about Investigations of Short Circuit Robustness of SiC IGBTs with Considerations on Physics Properties and Design.

Compact Trench Floating Field Rings Termination for 10kV+ Rated SiC n-IGBTs (2022)
Journal Article
Lophitis, N., Gammon, P. M., Renz, A. B., Dai, T. X., Tiwari, A., Trajkovic, T., …Antoniou, M. (2022). Compact Trench Floating Field Rings Termination for 10kV+ Rated SiC n-IGBTs. Materials Science Forum, 1062, 598-602. https://doi.org/10.4028/p-64ey6u

This work presents the design methodology and performance of a compact edge termination structure aiming 10kV+ rated Silicon Carbide (SiC) devices. Standard Floating Field Rings (FFRs) for such high voltage rating SiC devices are not favored because... Read More about Compact Trench Floating Field Rings Termination for 10kV+ Rated SiC n-IGBTs.

Reduce-Order Analysis and Circuit-Level Cost Function for the Numerical Optimization of Power Electronics Modules (2021)
Conference Proceeding
Cairnie, M., DiMarino, C., Evans, P., & Lophitis, N. (2021). Reduce-Order Analysis and Circuit-Level Cost Function for the Numerical Optimization of Power Electronics Modules. In 2021 IEEE 22nd Workshop on Control and Modelling of Power Electronics (COMPEL). https://doi.org/10.1109/compel52922.2021.9645944

Energy innovation trends such as sustainable grids, and the electrification of the consumer transportation market are accelerating the adoption of medium-voltage (MV) silicon-carbide (SiC) technology. The fast switching times and higher operating tem... Read More about Reduce-Order Analysis and Circuit-Level Cost Function for the Numerical Optimization of Power Electronics Modules.

Trench Floating Field Rings termination for 10kV+ rated SiC n-IGBTs (2021)
Presentation / Conference
Lophitis, N., Gammon, P. M., Renz, A. B., Dai, T., Tiwari, A., Trajkovic, T., …Antoniou, M. (2021, October). Trench Floating Field Rings termination for 10kV+ rated SiC n-IGBTs. Paper presented at The 13th European Conference on Silicon Carbide and Related Materials (ECSCRM 2020·2021), Tours, France

3C-SiC-on-Si MOSFETs: overcoming material technology limitations (2021)
Journal Article
Arvanitopoulos, A., Antoniou, M., Li, F., Jennings, M. R., Perkins, S., Gyftakis, K. N., & Lophitis, N. (2021). 3C-SiC-on-Si MOSFETs: overcoming material technology limitations. IEEE Transactions on Industry Applications, https://doi.org/10.1109/TIA.2021.3119269

The cubic polytype (3C-) of Silicon Carbide (SiC) is an emerging semiconductor technology for power devices. The featured isotropic material properties along with the Wide Band Gap (WBG) characteristics make it an excellent choice for power Metal Oxi... Read More about 3C-SiC-on-Si MOSFETs: overcoming material technology limitations.

Experimental and physics based study of the Schottky Barrier Height inhomogeneity and associated traps affecting 3C-SiC-on-Si Schottky Barrier Diodes (2021)
Journal Article
Arvanitopoulos, A., Li, F., Jennings, M. R., Perkins, S., Gyftakis, K. N., Mawby, P., …Lophitis, N. (2021). Experimental and physics based study of the Schottky Barrier Height inhomogeneity and associated traps affecting 3C-SiC-on-Si Schottky Barrier Diodes. IEEE Transactions on Industry Applications, 57(5), 5252-5263. https://doi.org/10.1109/TIA.2021.3087667

The ability of cubic phase (3C-) Silicon Carbide (SiC) to grow heteroepitaxially on Silicon (Si) substrates (3C-SiC-on-Si) is an enabling feature for cost-effective Wide Bandgap devices and homogeneous integration with Si devices. In this paper, the... Read More about Experimental and physics based study of the Schottky Barrier Height inhomogeneity and associated traps affecting 3C-SiC-on-Si Schottky Barrier Diodes.

A semiconductor device and methods for production thereof (2021)
Patent
Lophitis, N., & Arvanitopoulos, A. (2021). A semiconductor device and methods for production thereof. WO2021/001645 A1

A method for producing a semiconductor device, which includes epitaxially forming a first layer of n-type conductivity on a substrate or on a previously epitaxially formed layer; epitaxially forming a body layer of p-type conductivity on the first la... Read More about A semiconductor device and methods for production thereof.

Integrated Gate Commutated Thyristor: From Trench to Planar (2020)
Conference Proceeding
Vemulapati, U., Stiasny, T., Wikström, T., Lophitis, N., & Udrea, F. (2020). Integrated Gate Commutated Thyristor: From Trench to Planar. In Proceedings - 2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD) (490-493). https://doi.org/10.1109/ISPSD46842.2020.9170102

© 2020 IEEE. The planar Integrated Gate Commutated Thyristor (IGCT) concept is proposed to simplify the fabrication process of the device and improve the ruggedness as well as electrothermal performance of the device. The planar IGCT concept has been... Read More about Integrated Gate Commutated Thyristor: From Trench to Planar.

The p-ring Trench Schottky IGBT: A solution towards latch-up immunity and an enhanced safe-operating area (2020)
Conference Proceeding
Antoniou, M., Lophitis, N., Udrea, F., Corvasce, C., & De-Michielis, L. (2020). The p-ring Trench Schottky IGBT: A solution towards latch-up immunity and an enhanced safe-operating area. In Proceedings - 2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD) (134-137). https://doi.org/10.1109/ISPSD46842.2020.9170084

© 2020 IEEE. A novel Trench IGBT design, namely the p-ring Trench Schottky IGBT, with improved latch-up immunity and an enhanced safe-operating area is proposed. This design improves the performance of the FS+ IGBT by facilitating the collection of h... Read More about The p-ring Trench Schottky IGBT: A solution towards latch-up immunity and an enhanced safe-operating area.

Universal Li-Ion Cell Electro-Thermal Model (2020)
Journal Article
Stocker, R., Mumtaz, A., Braglia, M., & Lophitis, N. (2020). Universal Li-Ion Cell Electro-Thermal Model. IEEE Transactions on Transportation Electrification, 7(1), 6-15. https://doi.org/10.1109/TTE.2020.2986606

This paper describes and verifies a Li-ion cell electro-thermal model and the associated data analysis process. It is designed to be adaptable and give accurate results across all variations of operating conditions and cell design based only on time... Read More about Universal Li-Ion Cell Electro-Thermal Model.