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Photo-quantum Hall effect and light-induced charge transfer at the interface of graphene/InSe heterostructures (2018)
Journal Article
Bhuiyan, M. A., Kudrynskyi, Z. R., Mazumder, D., Greener, J. D., Makarovsky, O., Mellor, C. J., …Patanè, A. (2019). Photo-quantum Hall effect and light-induced charge transfer at the interface of graphene/InSe heterostructures. Advanced Functional Materials, 29(3), Article 1805491. https://doi.org/10.1002/adfm.201805491

The transfer of electronic charge across the interface of two van der Waals crystals can underpin the operation of a new class of functional devices. Amongst van der Waals semiconductors, an exciting and rapidly growing development involves the “post... Read More about Photo-quantum Hall effect and light-induced charge transfer at the interface of graphene/InSe heterostructures.

Design and optical characterisation of an efficient light trapping structure for dye-sensitized solar cell integrated windows (2018)
Journal Article
Knott, A., Liu, X., Makarovskiy, O., O'Shea, J., Tuck, C., & Wu, Y. (2019). Design and optical characterisation of an efficient light trapping structure for dye-sensitized solar cell integrated windows. Building Simulation, 12(1), 41-49. https://doi.org/10.1007/s12273-018-0485-1

Windows integrated with semi-transparent photovoltaics (PVs) such as Dye-Sensitized Solar Cells (DSSCs) show good potential in improving building performance, in term of providing daylight, reducing unnecessary solar heat gain and also generating ele... Read More about Design and optical characterisation of an efficient light trapping structure for dye-sensitized solar cell integrated windows.

Room temperature uniaxial magnetic anisotropy induced by Fe-islands in the InSe semiconductor van der Waals crystal (2018)
Journal Article
Moro, F., Bhuiyan, M. A., Kudrynskyi, Z. R., Puttock, R., Kazakova, O., Makarovsky, O., …Patanè, A. (2018). Room temperature uniaxial magnetic anisotropy induced by Fe-islands in the InSe semiconductor van der Waals crystal. Advanced Science, 5(7), Article 1800257. https://doi.org/10.1002/advs.201800257

The controlled manipulation of the spin and charge of electrons in a semiconductor has the potential to create new routes to digital electronics beyond Moore’s law, spintronics, and quantum detection and imaging for sensing applications. These techno... Read More about Room temperature uniaxial magnetic anisotropy induced by Fe-islands in the InSe semiconductor van der Waals crystal.

Observation of spin and valley splitting of Landau levels under magnetic tunneling in graphene/boron nitride/graphene structures (2018)
Journal Article
Khanin, Y., Vdovin, E., Larkin, I., Makarovsky, O., Sklyueva, Y., Mishchenko, A., …Novoselov, K. (in press). Observation of spin and valley splitting of Landau levels under magnetic tunneling in graphene/boron nitride/graphene structures. JETP Letters, 107(4), https://doi.org/10.1134/S0021364018040069

Resonance magnetic tunneling in heterostructures formed by graphene single sheets separated by a hexagonal boron nitride barrier and bounded by two gates has been investigated in a strong magnetic field, which has allowed observing transitions betwee... Read More about Observation of spin and valley splitting of Landau levels under magnetic tunneling in graphene/boron nitride/graphene structures.

Scanning photocurrent microscopy of 3D printed light trapping structures in dye-sensitized solar cells (2018)
Journal Article
Knott, A. N., Makarovsky, O., O’Shea, P., Tuck, C., & Wu, Y. (2018). Scanning photocurrent microscopy of 3D printed light trapping structures in dye-sensitized solar cells. Solar Energy Materials and Solar Cells, 180, https://doi.org/10.1016/j.solmat.2018.02.028

Converting solar energy directly into electricity as a clean and renewable energy resource is immensely important to solving the energy crisis and environmental pollution problems induced by the consumption of fossil fuels. Dye-sensitized solar cells... Read More about Scanning photocurrent microscopy of 3D printed light trapping structures in dye-sensitized solar cells.

Optical detection and spatial modulation of mid-infrared surface plasmon polaritons in a highly doped semiconductor (2017)
Journal Article
Di Paola, D., Velichko, A. V., Bomers, M., Balakrishnan, N., Makarovsky, O., Capizzi, M., …Patanè, A. (2018). Optical detection and spatial modulation of mid-infrared surface plasmon polaritons in a highly doped semiconductor. Advanced Optical Materials, 6(3), Article 1700492. https://doi.org/10.1002/adom.201700492

Highly doped semiconductors (HDSCs) are promising candidates for plasmonic applications in the mid-infrared (MIR) spectral range. This work examines a recent addition to the HDSC family, the dilute nitride alloy In(AsN). Post-growth hydrogenation of... Read More about Optical detection and spatial modulation of mid-infrared surface plasmon polaritons in a highly doped semiconductor.

Giant Quantum Hall Plateau in Graphene Coupled to an InSe van der Waals Crystal (2017)
Journal Article
Kudrynskyi, Z. R., Bhuiyan, M. A., Makarovsky, O., Greener, J. D., Vdovin, E. E., Kovalyuk, Z. D., …Patanè, A. (2017). Giant Quantum Hall Plateau in Graphene Coupled to an InSe van der Waals Crystal. Physical Review Letters, 119(15), Article 157701. https://doi.org/10.1103/PhysRevLett.119.157701

© 2017 authors. Published by the American Physical Society. We report on a "giant" quantum Hall effect plateau in a graphene-based field-effect transistor where graphene is capped by a layer of the van der Waals crystal InSe. The giant quantum Hall e... Read More about Giant Quantum Hall Plateau in Graphene Coupled to an InSe van der Waals Crystal.

Enhancing optoelectronic properties of SiC-grown graphene by a surface layer of colloidal quantum dots (2017)
Journal Article
Makarovsky, O., Turyanska, L., Mori, N., Greenaway, M., Eaves, L., Patanè, A., …Yakimova, R. (in press). Enhancing optoelectronic properties of SiC-grown graphene by a surface layer of colloidal quantum dots. 2D Materials, 4(3), https://doi.org/10.1088/2053-1583/aa76bb

We report a simultaneous increase of carrier concentration, mobility and photoresponsivity when SiC-grown graphene is decorated with a surface layer of colloidal PbS quantum dots, which act as electron donors. The charge on the ionised dots is spatia... Read More about Enhancing optoelectronic properties of SiC-grown graphene by a surface layer of colloidal quantum dots.

Engineering p-n junctions and bandgap tuning of InSe nanolayers by controlled oxidation (2017)
Journal Article
Balakrishnan, N., Kudrynskyi, Z. R., Smith, E. F., Fay, M. W., Makarovsky, O., Kovalyuk, Z. D., …Patanè, A. (2017). Engineering p-n junctions and bandgap tuning of InSe nanolayers by controlled oxidation. 2D Materials, 4(2), Article 025043. https://doi.org/10.1088/2053-1583/aa61e0

Exploitation of two-dimensional (2D) van der Waals (vdW) crystals can be hindered by the deterioration of the crystal surface over time due to oxidation. On the other hand, the existence of a stable oxide at room temperature can offer prospects for s... Read More about Engineering p-n junctions and bandgap tuning of InSe nanolayers by controlled oxidation.

Mobility enhancement of CVD graphene by spatially correlated charges (2017)
Journal Article
Turyanska, L., Makarovsky, O., Eaves, L., Patanè, A., & Mori, N. (2017). Mobility enhancement of CVD graphene by spatially correlated charges. 2D Materials, 4(2), Article 025026. https://doi.org/10.1088/2053-1583/aa55b4

The manuscript presents a strategy for enhancing the carrier mobility of single layer CVD graphene (CVD SLG) based on spatially correlated charges. Our Monte Carlo simulations, numerical modeling and the experimental results confirm that spatial corr... Read More about Mobility enhancement of CVD graphene by spatially correlated charges.

The direct-to-indirect band gap crossover in two-dimensional van der Waals Indium Selenide crystals (2016)
Journal Article
Mudd, G., Molas, M., Chen, X., Zólyomi, V., Nogajewski, K., Kudrynskyi, Z. R., …Patanè, A. (2016). The direct-to-indirect band gap crossover in two-dimensional van der Waals Indium Selenide crystals. Scientific Reports, 6(1), Article 39619. https://doi.org/10.1038/srep39619

The electronic band structure of van der Waals (vdW) layered crystals has properties that depend on the composition, thickness and stacking of the component layers. Here we use density functional theory and high field magneto-optics to investigate th... Read More about The direct-to-indirect band gap crossover in two-dimensional van der Waals Indium Selenide crystals.

Highly-mismatched InAs/InSe heterojunction diodes (2016)
Journal Article
Velichko, A., Kudrynskyi, Z. R., Di Paola, D., Makarovsky, O., Kesaria, M., Krier, A., …Patanè, A. (in press). Highly-mismatched InAs/InSe heterojunction diodes. Applied Physics Letters, 109(18), Article 182115. https://doi.org/10.1063/1.4967381

We report on heterojunction diodes prepared by exfoliation and direct mechanical transfer of a p-type InSe thin film onto an n-type InAs epilayer. We show that despite the different crystal structures and large lattice mismatch (34%) of the component... Read More about Highly-mismatched InAs/InSe heterojunction diodes.

Resonant Zener tunnelling via zero-dimensional states in a narrow gap diode (2016)
Journal Article
Di Poala, D. M., Kesaria, M., Makarovsky, O., Velichko, A., Eaves, L., Mori, N., …Patanè, A. (in press). Resonant Zener tunnelling via zero-dimensional states in a narrow gap diode. Scientific Reports, 6, Article e32039. https://doi.org/10.1038/srep32039

Interband tunnelling of carriers through a forbidden energy gap, known as Zener tunnelling, is a phenomenon of fundamental and technological interest. Its experimental observation in the Esaki p-n semiconductor diode has led to the first demonstratio... Read More about Resonant Zener tunnelling via zero-dimensional states in a narrow gap diode.

Quantum confinement and photoresponsivity of ?-In2Se3 nanosheets grown by physical vapour transport (2016)
Journal Article
Balakrishnan, N., Staddon, C. R., Smith, E. F., Stec, J., Gay, D., Mudd, G. W., …Beton, P. H. (in press). Quantum confinement and photoresponsivity of β-In2Se3 nanosheets grown by physical vapour transport. 2D Materials, 3(2), 1-8. https://doi.org/10.1088/2053-1583/3/2/025030

We demonstrate that β-In2Se3 layers with thickness ranging from 2.8 – 100 nm can be grown on SiO2/Si, mica and graphite using a physical vapour transport method. The β-In2Se3 layers are chemically stable at room temperature and exhibit a blue-shift o... Read More about Quantum confinement and photoresponsivity of ?-In2Se3 nanosheets grown by physical vapour transport.

Phonon-Assisted Resonant Tunneling of Electrons in Graphene–Boron Nitride Transistors (2016)
Journal Article
Vdovin, E. E., Mishchenko, A., Greenaway, M., Zhu, M., Ghazaryan, D., Misra, A., …Eaves, L. (2016). Phonon-Assisted Resonant Tunneling of Electrons in Graphene–Boron Nitride Transistors. Physical Review Letters, 116(18), Article 186603. https://doi.org/10.1103/PhysRevLett.116.186603

We observe a series of sharp resonant features in the differential conductance of graphene-hexagonal boron nitride-graphene tunnel transistors over a wide range of bias voltages between 10 and 200 mV. We attribute them to electron tunneling assisted... Read More about Phonon-Assisted Resonant Tunneling of Electrons in Graphene–Boron Nitride Transistors.

Resonant tunnelling between the chiral Landau states of twisted graphene lattices (2015)
Journal Article
Greenaway, M., Vdovin, E. E., Mishchenko, A., Makarovsky, O., Patanè, A., Wallbank, J., …Eaves, L. (2015). Resonant tunnelling between the chiral Landau states of twisted graphene lattices. Nature Physics, 11(12), 1057-1062. https://doi.org/10.1038/nphys3507

A class of multilayered functional materials has recently emerged in which the component atomic layers are held together by weak van der Waals forces that preserve the structural integrity and physical properties of each layer. An exemplar of such a... Read More about Resonant tunnelling between the chiral Landau states of twisted graphene lattices.

High Broad-Band Photoresponsivity of Mechanically Formed InSe-Graphene van der Waals Heterostructures (2015)
Journal Article
Mudd, G. W., Svatek, S. A., Hague, L., Makarovsky, O., Kudrynskyi, Z. R., Mellor, C. J., …Patanè, A. (2015). High Broad-Band Photoresponsivity of Mechanically Formed InSe-Graphene van der Waals Heterostructures. Advanced Materials, 27(25), 3760-3766. https://doi.org/10.1002/adma.201500889

We exploit the broad-band transparency of graphene and the favorable band line up of graphene with van der Waals InSe crystals to create new functional heterostructures and high-performance photodetectors. The InSe-graphene heterostructure exhibits a... Read More about High Broad-Band Photoresponsivity of Mechanically Formed InSe-Graphene van der Waals Heterostructures.

Ligand-Induced Control of Photoconductive Gain and Doping in a Hybrid Graphene–Quantum Dot Transistor (2015)
Journal Article
Turyanska, L., Makarovsky, O., Svatek, S. A., Beton, P. H., Mellor, C. J., Patanè, A., …Wilson, N. R. (2015). Ligand-Induced Control of Photoconductive Gain and Doping in a Hybrid Graphene–Quantum Dot Transistor. Advanced Electronic Materials, 1(7), 1500062. https://doi.org/10.1002/aelm.201500062

In graphene devices decorated with a layer of near-infrared colloidal PbS quantum dots (QDs), the choice of the QD capping ligands and the integrity of the QD layer have a strong influence on the doping, carrier mobility, and photoresponse. By using... Read More about Ligand-Induced Control of Photoconductive Gain and Doping in a Hybrid Graphene–Quantum Dot Transistor.

Twist-controlled resonant tunnelling in graphene/boron nitride/graphene heterostructures (2014)
Journal Article
Mishchenko, A., Tu, J., Cao, Y., Gorbachev, R., Wallbank, J., Greenaway, M., …Novoselov, K. (2014). Twist-controlled resonant tunnelling in graphene/boron nitride/graphene heterostructures. Nature Nanotechnology, 9, 808-813. https://doi.org/10.1038/NNANO.2014.187

Recent developments in the technology of van der Waals heterostructures made from two-dimensional atomic crystals ave already led to the observation of new physical phenomena, such as the metal-insulator transition and Coulomb drag, and to the realis... Read More about Twist-controlled resonant tunnelling in graphene/boron nitride/graphene heterostructures.

Room Temperature Electroluminescence from Mechanically Formed van der Waals III-VI Homojunctions and Heterojunctions (2014)
Journal Article
Balakrishnan, N., Kudrynskyi, Z. R., Fay, M. W., Mudd, G. W., Svatek, S. A., Makarovsky, O., …Patanè, A. (2014). Room Temperature Electroluminescence from Mechanically Formed van der Waals III-VI Homojunctions and Heterojunctions. Advanced Optical Materials, 2(11), 1064-1069. https://doi.org/10.1002/adom.201400202

Room temperature electroluminescence from semiconductor junctions is demonstrated. The junctions are fabricated by the exfoliation and direct mechanical adhesion of InSe and GaSe van der Waals layered crystals. Homojunction diodes formed from layers... Read More about Room Temperature Electroluminescence from Mechanically Formed van der Waals III-VI Homojunctions and Heterojunctions.