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Electrical control of 180° domain walls in an antiferromagnet (2023)
Journal Article
Amin, O. J., Reimers, S., Maccherozzi, F., Dhesi, S. S., Novák, V., Campion, R. P., …Wadley, P. (2023). Electrical control of 180° domain walls in an antiferromagnet. APL Materials, 11(9), Article 091112. https://doi.org/10.1063/5.0156508

We demonstrate the reversible current-induced motion of 180° antiferromagnetic domain walls in a CuMnAs device. By controlling the magnitude and direction of the current pulse, the position of a domain wall can be switched between three distinct pinn... Read More about Electrical control of 180° domain walls in an antiferromagnet.

Antiferromagnetic half-skyrmions electrically generated and controlled at room temperature (2023)
Journal Article
Amin, O. J., Poole, S. F., Reimers, S., Barton, L. X., Dal Din, A., Maccherozzi, F., …Wadley, P. (2023). Antiferromagnetic half-skyrmions electrically generated and controlled at room temperature. Nature Nanotechnology, 18(8), 849-853. https://doi.org/10.1038/s41565-023-01386-3

Topologically protected magnetic textures are promising candidates for information carriers in future memory devices, as they can be efficiently propelled at very high velocities using current-induced spin torques. These textures—nanoscale whirls in... Read More about Antiferromagnetic half-skyrmions electrically generated and controlled at room temperature.

Probing the manipulation of antiferromagnetic order in CuMnAs films using neutron diffraction (2022)
Journal Article
Poole, S. F., Barton, L. X., Wang, M., Manuel, P., Khalyavin, D., Langridge, S., …Wadley, P. (2022). Probing the manipulation of antiferromagnetic order in CuMnAs films using neutron diffraction. Applied Physics Letters, 121(5), Article 052402. https://doi.org/10.1063/5.0103390

We describe measurements of the uniaxial magnetic anisotropy and spin-flop rotation of the Néel vector in antiferromagnetic CuMnAs thin films using neutron diffraction. The suppression of the magnetic (100) peak under magnetic fields is observed for... Read More about Probing the manipulation of antiferromagnetic order in CuMnAs films using neutron diffraction.

Atomically sharp domain walls in an antiferromagnet (2022)
Journal Article
Krizek, F., Reimers, S., Kašpar, Z., Marmodoro, A., Michalička, J., Man, O., …Jungwirth, T. (2022). Atomically sharp domain walls in an antiferromagnet. Science Advances, 8(13), https://doi.org/10.1126/sciadv.abn3535

The interest in understanding scaling limits of magnetic textures such as domain walls spans the entire field of magnetism from its physical fundamentals to applications in information technologies. Here, we explore antiferromagnetic CuMnAs in which... Read More about Atomically sharp domain walls in an antiferromagnet.

Defect-driven antiferromagnetic domain walls in CuMnAs films (2022)
Journal Article
Reimers, S., Kriegner, D., Gomonay, O., Carbone, D., Krizek, F., Novák, V., …Edmonds, K. W. (2022). Defect-driven antiferromagnetic domain walls in CuMnAs films. Nature Communications, 13(1), Article 724. https://doi.org/10.1038/s41467-022-28311-x

Efficient manipulation of antiferromagnetic (AF) domains and domain walls has opened up new avenues of research towards ultrafast, high-density spintronic devices. AF domain structures are known to be sensitive to magnetoelastic effects, but the micr... Read More about Defect-driven antiferromagnetic domain walls in CuMnAs films.

Magnetism and magnetoresistance in the critical region of a dilute ferromagnet (2021)
Journal Article
Wang, M., Howells, B., Marshall, R. A., Taylor, J. M., Edmonds, K. W., Rushforth, A. W., …Gallagher, B. L. (2021). Magnetism and magnetoresistance in the critical region of a dilute ferromagnet. Scientific Reports, 11, Article 2300. https://doi.org/10.1038/s41598-021-81893-2

We present detailed experimental measurements and simulations of the field-dependent magnetization and magnetoresistance in the vicinity of the Curie temperature in the highly disordered dilute ferromagnetic semiconductor (Ga,Mn)As. The observed depe... Read More about Magnetism and magnetoresistance in the critical region of a dilute ferromagnet.

Quenching of an antiferromagnet into high resistivity states using electrical or ultrashort optical pulses (2020)
Journal Article
Kašpar, Z., Surýnek, M., Zubáč, J., Krizek, F., Novák, V., Campion, R. P., …Jungwirth, T. (2021). Quenching of an antiferromagnet into high resistivity states using electrical or ultrashort optical pulses. Nature Electronics, 4(1), 30-37. https://doi.org/10.1038/s41928-020-00506-4

Antiferromagnets are of potential use in the development of spintronic devices due to their ultrafast dynamics, insensitivity to external magnetic fields and absence of magnetic stray fields. Similar to their ferromagnetic counterparts, antiferromagn... Read More about Quenching of an antiferromagnet into high resistivity states using electrical or ultrashort optical pulses.

Magneto-Seebeck microscopy of domain switching in collinear antiferromagnet CuMnAs (2020)
Journal Article
Janda, T., Godinho, J., Ostatnicky, T., Pfitzner, E., Ulrich, G., Hoehl, A., …Wunderlich, J. (2020). Magneto-Seebeck microscopy of domain switching in collinear antiferromagnet CuMnAs. Physical Review Materials, 4(9), Article 094413. https://doi.org/10.1103/physrevmaterials.4.094413

Antiferromagnets offer spintronic device characteristics unparalleled in ferromagnets owing to their lack of stray fields, THz spin dynamics, and rich materials landscape. Microscopic imaging of antiferromagnetic domains is one of the key prerequisit... Read More about Magneto-Seebeck microscopy of domain switching in collinear antiferromagnet CuMnAs.

Low-energy switching of antiferromagnetic CuMnAs/GaP using sub-10 nanosecond current pulses (2020)
Journal Article
Omari, K. A., Barton, L. X., Amin, O., Campion, R. P., Rushforth, A. W., Kent, A. J., …Edmonds, K. W. (2020). Low-energy switching of antiferromagnetic CuMnAs/GaP using sub-10 nanosecond current pulses. Journal of Applied Physics, 127(19), Article 193906. https://doi.org/10.1063/5.0006183

The recently discovered electrical-induced switching of antiferromagnetic (AF) materials that have spatial inversion asymmetry has enriched the field of spintronics immensely and opened the door for the concept of antiferromagnetic memory devices. Cu... Read More about Low-energy switching of antiferromagnetic CuMnAs/GaP using sub-10 nanosecond current pulses.

Tuning Interfacial Spins in Antiferromagnetic–Ferromagnetic–Heavy-Metal Heterostructures via Spin-Orbit Torque (2020)
Journal Article
Wang, K. Y., Liu, X. H., Zhou, Z. P., & Edmonds, K. W. (2020). Tuning Interfacial Spins in Antiferromagnetic–Ferromagnetic–Heavy-Metal Heterostructures via Spin-Orbit Torque. Physical Review Applied, 13(1), https://doi.org/10.1103/physrevapplied.13.014059

Antiferromagnets are outstanding candidates for the next generation of spintronic applications, with great potential for downscaling and decreasing power consumption. Recently, the manipulation of bulk properties of antiferromagnets has been realized... Read More about Tuning Interfacial Spins in Antiferromagnetic–Ferromagnetic–Heavy-Metal Heterostructures via Spin-Orbit Torque.

Gating effects in antiferromagnetic CuMnAs (2019)
Journal Article
Grzybowski, M. J., Wadley, P., Edmonds, K. W., Campion, R. P., Dybko, K., Majewicz, M., …Dietl, T. (2019). Gating effects in antiferromagnetic CuMnAs. AIP Advances, 9(11), 1-5. https://doi.org/10.1063/1.5124354

Antiferromagnets (AFs) attract much attention due to their potential applications in spintronics. Both the electric current and the electric field are considered as tools suitable to control the properties and the Néel vector direction of AFs. Among... Read More about Gating effects in antiferromagnetic CuMnAs.

Thermal stability of interstitial and substitutional Mn in ferromagnetic (Ga,Mn)As (2019)
Journal Article
Lima, T. A. L., Wahl, U., Costa, A., Augustyns, V., Edmonds, K. W., Gallagher, B. L., …Pereira, L. M. C. (2019). Thermal stability of interstitial and substitutional Mn in ferromagnetic (Ga,Mn)As. Physical Review B, 100(14), Article 144409. https://doi.org/10.1103/physrevb.100.144409

© 2019 American Physical Society. In (Ga,Mn)As, a model dilute magnetic semiconductor, the electric and magnetic properties are strongly influenced by the lattice sites occupied by the Mn atoms. In particular, the highest Curie temperatures are achie... Read More about Thermal stability of interstitial and substitutional Mn in ferromagnetic (Ga,Mn)As.

Spin Logic Devices via Electric Field Controlled Magnetization Reversal by Spin-Orbit Torque (2019)
Journal Article
Yang, M., Deng, Y., Wu, Z., Cai, K., Edmonds, K. W., Li, Y., …Wang, K. (2019). Spin Logic Devices via Electric Field Controlled Magnetization Reversal by Spin-Orbit Torque. IEEE Electron Device Letters, 40(9), 1554-1557. https://doi.org/10.1109/led.2019.2932479

We describe a spin logic device with controllable magnetization switching of perpendicularly magnetized ferromagnet/heavy metal structures on a ferroelectric (1-x)[Pb(Mg 1/3 Nb 2/3 )O 3 ]-x[PbTiO 3 ] (PMN-PT) substrate using current-induced spin-orbi... Read More about Spin Logic Devices via Electric Field Controlled Magnetization Reversal by Spin-Orbit Torque.

Multilevel information storage using magnetoelastic layer stacks (2019)
Journal Article
Pattnaik, D., Beardsley, R., Love, C., Cavill, S., Edmonds, K., & Rushforth, A. (2019). Multilevel information storage using magnetoelastic layer stacks. Scientific Reports, 9, Article 3156. https://doi.org/10.1038/s41598-019-39775-1

The use of voltages to control magnetisation via the inverse magnetostriction effect in piezoelectric/ferromagnet heterostructures holds promise for ultra-low energy information storage technologies. Epitaxial galfenol, an alloy of iron and gallium,... Read More about Multilevel information storage using magnetoelastic layer stacks.

Adjustable Current-Induced Magnetization Switching Utilizing Interlayer Exchange Coupling (2018)
Journal Article
Sheng, Y., Edmonds, K., Ma, X., Zheng, H., & Wang, K. (2018). Adjustable Current-Induced Magnetization Switching Utilizing Interlayer Exchange Coupling. Advanced Electronic Materials, 4(9), Article 1800224. https://doi.org/10.1002/aelm.201800224

© 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim Electrical current–induced deterministic magnetization switching in a magnetic multilayer structure without any external magnetic field is realized by utilizing interlayer exchange coupling. Two fer... Read More about Adjustable Current-Induced Magnetization Switching Utilizing Interlayer Exchange Coupling.

Current polarity-dependent manipulation of antiferromagnetic domains (2018)
Journal Article
Wadley, P., Reimers, S., Grzybowski, M. J., Andrews, C., Wang, M., Chauhan, J., …Jungwirth, T. (2018). Current polarity-dependent manipulation of antiferromagnetic domains. Nature Nanotechnology, 13(5), 362-365. https://doi.org/10.1038/s41565-018-0079-1

Antiferromagnets have several favourable properties as active elements in spintronic devices, including ultra-fast dynamics, zero stray fields and insensitivity to external magnetic fields. Tetragonal CuMnAs is a testbed system in which the antiferro... Read More about Current polarity-dependent manipulation of antiferromagnetic domains.

Switching the uniaxial magnetic anisotropy by ion irradiation induced compensation (2018)
Journal Article
Yuan, Y., Amarouche, T., Xu, C., Rushforth, A., Böttger, R., Edmonds, K., …Zhou, S. (2018). Switching the uniaxial magnetic anisotropy by ion irradiation induced compensation. Journal of Physics D: Applied Physics, 51(14), https://doi.org/10.1088/1361-6463/aab1db

© 2018 IOP Publishing Ltd. In the present work, the uniaxial magnetic anisotropy of GaMnAsP is modified by helium ion irradiation. According to the micro-magnetic parameters, e.g. resonance fields and anisotropy constants deduced from ferromagnetic r... Read More about Switching the uniaxial magnetic anisotropy by ion irradiation induced compensation.

Control of antiferromagnetic spin axis orientation in bilayer Fe/CuMnAs films (2017)
Journal Article
Wadley, P., Edmonds, K., Shahedkhah, M., Campion, R., Gallagher, B., Železný, J., …Dhesi, S. (in press). Control of antiferromagnetic spin axis orientation in bilayer Fe/CuMnAs films. Scientific Reports, 7, Article 11147. https://doi.org/10.1038/s41598-017-11653-8

Using x-ray magnetic circular and linear dichroism techniques, we demonstrate a collinear exchange coupling between an epitaxial antiferromagnet, tetragonal CuMnAs, and an Fe surface layer. A small uncompensated Mn magnetic moment is observed which i... Read More about Control of antiferromagnetic spin axis orientation in bilayer Fe/CuMnAs films.

Deterministic control of magnetic vortex wall chirality by electric field (2017)
Journal Article
Beardsley, R., Bowe, S., Parkes, D., Reardon, C., Edmonds, K., Gallagher, B., …Rushforth, A. (2017). Deterministic control of magnetic vortex wall chirality by electric field. Scientific Reports, 7, Article 7613. https://doi.org/10.1038/s41598-017-07944-9

Concepts for information storage and logical processing based on magnetic domain walls have great potential for implementation in future information and communications technologies. To date, the need to apply power hungry magnetic fields or heat diss... Read More about Deterministic control of magnetic vortex wall chirality by electric field.

Antiferromagnetic CuMnAs multi-level memory cell with microelectronic compatibility (2017)
Journal Article
Olejnik, K., Schuler, V., Marti, X., Novák, V., Kaspar, Z., Wadley, P., …Jungwirth, T. (2017). Antiferromagnetic CuMnAs multi-level memory cell with microelectronic compatibility. Nature Communications, 8, Article 15434. https://doi.org/10.1038/ncomms15434

Antiferromagnets offer a unique combination of properties including the radiation and magnetic field hardness, the absence of stray magnetic fields, and the spin-dynamics frequency scale in terahertz. Recent experiments have demonstrated that relativ... Read More about Antiferromagnetic CuMnAs multi-level memory cell with microelectronic compatibility.