Design of low inductance switching power cell for GaN HEMT based inverter
(2017)
Journal Article
Gurpinar, E., Iannuzzo, F., Yang, Y., Castellazzi, A., & Blaabjerg, F. (in press). Design of low inductance switching power cell for GaN HEMT based inverter. IEEE Transactions on Industry Applications, https://doi.org/10.1109/TIA.2017.2777417
In this paper, an ultra-low inductance power cell is designed for a three-Level Active Neutral Point Clamped (3LANPC) based on 650 V gallium nitride (GaN) HEMT devices. The 3L-ANPC topology with GaN HEMT devices and the selected modulation scheme sui... Read More about Design of low inductance switching power cell for GaN HEMT based inverter.