Experimental study of the short-circuit performance for a 600V normally-off p-gate GaN HEMT
(2017)
Conference Proceeding
Oeder, T., Castellazzi, A., & Pfost, M. (in press). Experimental study of the short-circuit performance for a 600V normally-off p-gate GaN HEMT.
In this paper, the short-circuit robustness of a normally off GaN HEMT is investigated in relation to applied bias conditions and pulse duration. The results align with previous studies on normally-on devices in highlighting an electrical type of fai... Read More about Experimental study of the short-circuit performance for a 600V normally-off p-gate GaN HEMT.