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Packaging technology for a highly integrated 10kV SiC MOSFET module (2018)
Presentation / Conference
Mouawad, B., Di Marino, C., Li, J., Skuriat, R., & Johnson, M. (2018, August). Packaging technology for a highly integrated 10kV SiC MOSFET module. Paper presented at 14th International Seminar on Power Semiconductors (ISPS 2018), Prague, Czech Republic

High-voltage SiC devices offer an attractive combination of fast switching and low losses, giving application users unprecedented levels of flexibility in choice of topology and control strategy for medium- and high-voltage power conversion. However,... Read More about Packaging technology for a highly integrated 10kV SiC MOSFET module.

Development of a highly integrated 10 kV SiC MOSFET power module with a direct jet impingement cooling system (2018)
Conference Proceeding
Mouawad, B., Skuriat, R., Li, J., Johnson, C. M., & DiMarino, C. (2018). Development of a highly integrated 10 kV SiC MOSFET power module with a direct jet impingement cooling system. In 2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD). https://doi.org/10.1109/ispsd.2018.8393651

This paper presents a novel, highly integrated packaging design for Wolfspeed’s 10 kV SiC MOSFETs. These devices offer faster switching performance and lower losses than silicon devices. However, it has been shown that the package can have profound i... Read More about Development of a highly integrated 10 kV SiC MOSFET power module with a direct jet impingement cooling system.

Cost effective direct-substrate jet impingement cooling concept for power application (2018)
Conference Proceeding
Mouawad, B., Abebe, R., Skuriat, R., Li, J., De Lillo, L., Empringham, L., …Haynes, G. (2018). Cost effective direct-substrate jet impingement cooling concept for power application. In PCIM Europe 2018; International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management

Direct substrate jet impingement cooling can eliminate the use of the baseplate and significantly reduce the weight and volume of conventional thermal management solutions. This work demonstrates a cost-effective manufacturing approach based on print... Read More about Cost effective direct-substrate jet impingement cooling concept for power application.

Novel silicon carbide integrated power module for EV application (2018)
Conference Proceeding
Mouawad, B., Espina, J., Li, J., Empringham, L., & Johnson, C. M. (2018). Novel silicon carbide integrated power module for EV application. In IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia 2018), At Xi'an, Shaanxi

The successful penetration of Electric Vehicles (EVs) into the global automotive markets requires the developments of cost effective, high performance and high integration power electronic systems. The present work is concerned with the structural in... Read More about Novel silicon carbide integrated power module for EV application.

Comparative Thermal and Structural Characterization of Sintered Nano-Silver and High-Lead Solder Die Attachments During Power Cycling (2018)
Journal Article
Dai, J., Li, J., Agyakwa, P., Corfield, M., & Johnson, C. M. (2018). Comparative Thermal and Structural Characterization of Sintered Nano-Silver and High-Lead Solder Die Attachments During Power Cycling. IEEE Transactions on Device and Materials Reliability, 18(2), 256-265. https://doi.org/10.1109/TDMR.2018.2825386

13.5 mm × 13.5 mm sintered nano-silver attachments for power devices onto AlN substrates were prepared at 250 ºC and a pressure of 10MPa for 5 minutes and compared with Pb5Sn solder joint die attachments under constant current power cycling with an i... Read More about Comparative Thermal and Structural Characterization of Sintered Nano-Silver and High-Lead Solder Die Attachments During Power Cycling.

Comparison of power cycling reliability of flexible PCB interconnect smaller/thinner and larger/thicker power devices with topside Sn-3.5Ag solder joints (2018)
Journal Article
Li, J., Dai, J., & Johnson, C. M. (2018). Comparison of power cycling reliability of flexible PCB interconnect smaller/thinner and larger/thicker power devices with topside Sn-3.5Ag solder joints. Microelectronics Reliability, 84, 55-65. https://doi.org/10.1016/j.microrel.2018.03.013

The power cycling reliability of flexible printed circuit board (PCB) interconnect smaller/thinner (ST) 9.5 mm × 5.5 mm × 0.07 mm and larger/thicker (LT) 13.5 mm × 13.5 mm × 0.5 mm single Si diode samples have been studied. With the assumption of cre... Read More about Comparison of power cycling reliability of flexible PCB interconnect smaller/thinner and larger/thicker power devices with topside Sn-3.5Ag solder joints.

Improved Reliability of Planar Power Interconnect With Ceramic-Based Structure (2017)
Journal Article
Zhang, H., Li, J., Dai, J., Corfield, M., Liu, X., Liu, Y., …Johnson, C. M. (2018). Improved Reliability of Planar Power Interconnect With Ceramic-Based Structure. IEEE Journal of Emerging and Selected Topics in Power Electronics, 6(1), 175-187. https://doi.org/10.1109/jestpe.2017.2758901

This paper proposes an advanced Si3N4 ceramic-based structure with through vias designed and filled with brazing alloy as a reliable interconnect solution in planar power modules. Finite element (FE) modeling and simulation were first used to predict... Read More about Improved Reliability of Planar Power Interconnect With Ceramic-Based Structure.

Time-Efficient Sintering Processes to Attach Power Devices Using Nanosilver Dry Film (2017)
Journal Article
Dai, J., Li, J., Agyakwa, P., & Johnson, C. M. (2017). Time-Efficient Sintering Processes to Attach Power Devices Using Nanosilver Dry Film. Journal of Microelectronics and Electronic Packaging, 14(4), 140-149. https://doi.org/10.4071/imaps.521776

Pressure-assisted sintering processes to attach power devices using wet nanosilver pastes with time scales of minutes to a few hours have been widely reported. This paper presents our work on time-efficient sintering, using nanosilver dry film and an... Read More about Time-Efficient Sintering Processes to Attach Power Devices Using Nanosilver Dry Film.

Design and construction of a co-planar power bus interconnect for low inductance switching (2017)
Conference Proceeding
Lin, X., Li, J., & Johnson, M. (2017). Design and construction of a co-planar power bus interconnect for low inductance switching. In 2017 IEEE International Workshop On Integrated Power Packaging (IWIPP) (1-4). https://doi.org/10.1109/IWIPP.2017.7936755

A co-planar tab-slot type of interconnect demonstrator for connecting power switching devices and DC bus capacitors has been designed and constructed, aimed at low inductance switching. The demonstrator is composed of a double-sided tab connector and... Read More about Design and construction of a co-planar power bus interconnect for low inductance switching.

A Physical RC Network Model for Electrothermal Analysis of a Multichip SiC Power Module (2017)
Journal Article
Li, J., Castellazzi, A., Eleffendi, M. A., Gurpinar, E., Johnson, C. M., & Mills, L. (2018). A Physical RC Network Model for Electrothermal Analysis of a Multichip SiC Power Module. IEEE Transactions on Power Electronics, 33(3), 2494-2508. https://doi.org/10.1109/TPEL.2017.2697959

© 2017 IEEE. This paper is concerned with the thermal models which can physically reflect the heat-flow paths in a lightweight three-phase half-bridge two-level SiC power module with six MOSFETs and can be used for coupled electrothermal simulation.... Read More about A Physical RC Network Model for Electrothermal Analysis of a Multichip SiC Power Module.

Interconnect materials enabling IGBT modules to achieve stable short circuit failure behavior (2017)
Journal Article
Li, J., Yaqub, I., Corfield, M., & Johnson, C. M. (2017). Interconnect materials enabling IGBT modules to achieve stable short circuit failure behavior. IEEE Transactions on Components, Packaging, and Manufacturing Technology, 7(5), 734-744. https://doi.org/10.1109/TCPMT.2017.2683202

Insulated gate bipolar transistor (IGBT) modules, which can fail to stable short-circuit mode, have major applications in electricity network-related fields. Sn-3.5Ag solder joints and sintered Ag joints for the die attachment and Mo, Cu, Sn-3.5Ag, A... Read More about Interconnect materials enabling IGBT modules to achieve stable short circuit failure behavior.

Sintered-silver bonding of high-temperature piezoelectric ceramic sensors (2016)
Journal Article
Billore, J., Hascoët, S., Robutel, R., Buttay, C., & Li, J. (2017). Sintered-silver bonding of high-temperature piezoelectric ceramic sensors. IEEE Transactions on Components, Packaging, and Manufacturing Technology, 7(1), 3-9. https://doi.org/10.1109/TCPMT.2016.2628874

Silver sintering is used to bond five components together, in order to form a piezoelectric sensor. A description is provided of the preparation of these components, and of the manufacturing steps, which are carried out at a low temperature (280 °C).... Read More about Sintered-silver bonding of high-temperature piezoelectric ceramic sensors.

Predicting Lifetime of Thick Al Wire Bonds Using Signals Obtained From Ultrasonic Generator (2016)
Journal Article
Arjmand, E., Agyakwa, P., Corfield, M., Li, J., & Johnson, C. M. (2016). Predicting Lifetime of Thick Al Wire Bonds Using Signals Obtained From Ultrasonic Generator. IEEE Transactions on Components, Packaging, and Manufacturing Technology, 6(5), 814-821. https://doi.org/10.1109/TCPMT.2016.2543001

Routine monitoring of the wire bonding process requires real-time evaluation and control of wire bond quality. In this paper, we present a nondestructive technique for detecting bond quality by the application of a semisupervised classification algor... Read More about Predicting Lifetime of Thick Al Wire Bonds Using Signals Obtained From Ultrasonic Generator.

A thermal cycling reliability study of ultrasonically bonded copper wires (2016)
Journal Article
Arjmand, E., Agyakwa, P. A., Corfield, M. R., Li, J., Mouawad, B., & Mark Johnson, C. (2016). A thermal cycling reliability study of ultrasonically bonded copper wires. Microelectronics Reliability, 59, https://doi.org/10.1016/j.microrel.2016.01.009

In this work we report on a reliability investigation regarding heavy copper wires ultrasonically bonded onto active braze copper substrates. The results obtained from both a non-destructive approach using 3D X-ray tomography and shear tests showed n... Read More about A thermal cycling reliability study of ultrasonically bonded copper wires.

Low inductance 2.5kV packaging technology for SiC switches (2016)
Conference Proceeding
Mouawad, B., Li, J., Castellazzi, A., Johnson, C. M., Erlbacher, T., & Friedriches, P. (2016). Low inductance 2.5kV packaging technology for SiC switches.

The switching speed of power semiconductors has reached levels where conventional semiconductors packages limit the achievable performance due to relatively high parasitic inductance and capacitance. This paper presents a novel packaging structure wh... Read More about Low inductance 2.5kV packaging technology for SiC switches.

Response to comments on “A numerical method to determine interdiffusion coefficients of Cu6Sn5 and Cu3Sn intermetallic compounds” (2015)
Journal Article
Li, J., Agyakwa, P. A., & Johnson, C. M. (2016). Response to comments on “A numerical method to determine interdiffusion coefficients of Cu6Sn5 and Cu3Sn intermetallic compounds”. Intermetallics, 69, https://doi.org/10.1016/j.intermet.2015.10.016

Comments have recently been made by Yuan et al. [1] to deny one statement in our paper [2], Eq. (21) in Wagner's paper [3] can be used to accurately calculate the integrated interdiffusion coefficient for an incremental diffusion couple only under th... Read More about Response to comments on “A numerical method to determine interdiffusion coefficients of Cu6Sn5 and Cu3Sn intermetallic compounds”.

Dependence of overcurrent failure modes of IGBT modules on interconnect technologies (2015)
Journal Article
Yaqub, I., Li, J., & Johnson, C. M. (2015). Dependence of overcurrent failure modes of IGBT modules on interconnect technologies. Microelectronics Reliability, 55(12), 2596-2605. https://doi.org/10.1016/j.microrel.2015.09.020

Insulated gate bipolar transistor (IGBT) modules which can fail to short circuit mode have great of applications in electricity network related fields. Single IGBT samples have been constructed with the standard Al wire bonding, flexible printed circ... Read More about Dependence of overcurrent failure modes of IGBT modules on interconnect technologies.

Built-in reliability design of highly integrated solid-state power switches with metal bump interconnects (2014)
Journal Article
Li, J., Castellazzi, A., Dai, T., Corfield, M., Solomon, A. K., & Johnson, C. M. (2015). Built-in reliability design of highly integrated solid-state power switches with metal bump interconnects. IEEE Transactions on Power Electronics, 30(5), https://doi.org/10.1109/TPEL.2014.2357334

A stacked substrate–chip–bump–chip–substrate assembly has been demonstrated in the construction of power switch modules with high power density and good electrical performance. In this paper, special effort has been devoted to material selection and... Read More about Built-in reliability design of highly integrated solid-state power switches with metal bump interconnects.

Bonding strength of multiple SiC die attachment prepared by sintering of Ag nanoparticles (2014)
Journal Article
Li, J., Johnson, C. M., Buttay, C., Sabbah, W., & Azzopardi, S. (2015). Bonding strength of multiple SiC die attachment prepared by sintering of Ag nanoparticles. Journal of Materials Processing Technology, 215, 299-308. https://doi.org/10.1016/j.jmatprotec.2014.08.002

3 mm × 3 mm dummy SiC dies with 100\200\200 nm thick Ti\W\Au metallization have simultaneously been attached using sintering of Ag nanoparticle paste on AlN-based direct bonded copper substrates with 5\0.1 μm thick NiP\Au finish. The effect of prepar... Read More about Bonding strength of multiple SiC die attachment prepared by sintering of Ag nanoparticles.

Built-in reliability design of a high-frequency SiC MOSFET power module (2014)
Conference Proceeding
Li, J., Gurpinar, E., Lopez Arevalo, S., Castellazzi, A., & Mills, L. (in press). Built-in reliability design of a high-frequency SiC MOSFET power module.

A high frequency SiC MOSFET-based three-phase, 2-level power module has been designed, simulated, assembled and tested. The design followed a built-in reliability approach, involving extensive finite-element simulation based analysis of the electro-t... Read More about Built-in reliability design of a high-frequency SiC MOSFET power module.