Phonon-Assisted Resonant Tunneling of Electrons in Graphene–Boron Nitride Transistors

Vdovin, Evgeny E.; Mishchenko, A.; Greenaway, M.T.; Zhu, M.J.; Ghazaryan, D.; Misra, A.; Cao, Y.; Morozov, S.V.; Makarovsky, Oleg; Fromhold, T.M.; Patan�, Amalia; Slotman, G.J.; Katsnelson, M. I; Geim, A.K.; Nososelov, K.S.; Eaves, Laurence

doi:10.1103/PhysRevLett.116.186603

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On the potential of a new generation of magnetometers for MEG: a beamformer simulation study (2016)
Journal Article
Boto, E., Bowtell, R. W., Kruger, P., Fromhold, T. M., Morris, P. G., Meyer, S. S., …Brookes, M. J. (2016). On the potential of a new generation of magnetometers for MEG: a beamformer simulation study. PLoS ONE, 11(8), Article e0157655. https://doi.org/10.1371/journal.pone.0157655

Magnetoencephalography (MEG) is a sophisticated tool which yields rich information on the spatial, spectral and temporal signatures of human brain function. Despite unique potential, MEG is limited by a low signal-to-noise ratio (SNR) which is caused... Read More about On the potential of a new generation of magnetometers for MEG: a beamformer simulation study.

The UK National Quantum Technologies Hub in sensors and metrology (Keynote Paper) (2016)
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Bongs, K., Boyer, V., Cruise, M., Freise, A., Holynski, M., Hughes, J., …John, P. (2016). The UK National Quantum Technologies Hub in sensors and metrology (Keynote Paper). Proceedings of SPIE, 9900, Article 990009. https://doi.org/10.1117/12.2232143

The UK National Quantum Technology Hub in Sensors and Metrology is one of four flagship initiatives in the UK National of Quantum Technology Program. As part of a 20-year vision it translates laboratory demonstrations to deployable practical devices,... Read More about The UK National Quantum Technologies Hub in sensors and metrology (Keynote Paper).

Phonon-Assisted Resonant Tunneling of Electrons in Graphene–Boron Nitride Transistors (2016)
Journal Article
Vdovin, E. E., Mishchenko, A., Greenaway, M., Zhu, M., Ghazaryan, D., Misra, A., …Eaves, L. (2016). Phonon-Assisted Resonant Tunneling of Electrons in Graphene–Boron Nitride Transistors. Physical Review Letters, 116(18), Article 186603. https://doi.org/10.1103/PhysRevLett.116.186603

We observe a series of sharp resonant features in the differential conductance of graphene-hexagonal boron nitride-graphene tunnel transistors over a wide range of bias voltages between 10 and 200 mV. We attribute them to electron tunneling assisted... Read More about Phonon-Assisted Resonant Tunneling of Electrons in Graphene–Boron Nitride Transistors.