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Study of a Silicon Carbide MOSFET Power Module to Establish the Benefits of Adding Anti-parallel Schottky Diodes (2018)
Conference Proceeding
Trentin, A., Hind, D., Degano, M., Tighe, C., Arevalo, S. L., Yang, L., …Packwood, M. (2018). Study of a Silicon Carbide MOSFET Power Module to Establish the Benefits of Adding Anti-parallel Schottky Diodes. In 2018 IEEE Energy Conversion Congress and Exposition (ECCE) (1829-1836). https://doi.org/10.1109/ECCE.2018.8557415

The majority of commercial Silicon Carbide (SiC) MOSFET based power modules available on the market today also include SiC Schottky diodes placed in anti-parallel with the MOSFETs. Using an accurate electrical and thermal simulation model this paper... Read More about Study of a Silicon Carbide MOSFET Power Module to Establish the Benefits of Adding Anti-parallel Schottky Diodes.

Double Rotor Synchronous Reluctance Machine: Analysis towards Torque Capability (2018)
Conference Proceeding
Al-Ani, M., Mahmoud, H., Degano, M., & Gerada, C. (2018). Double Rotor Synchronous Reluctance Machine: Analysis towards Torque Capability. In Proceedings: 2018 XIII International Conference on Electrical machines (ICEM) (2144 - 2149). https://doi.org/10.1109/ICELMACH.2018.8506898

© 2018 IEEE. This paper presents a comparative analysis of double rotor synchronous reluctance machines. Different topologies of the proposed machine have been investigated, such as double rotor with double-sided stator and double rotor with single-s... Read More about Double Rotor Synchronous Reluctance Machine: Analysis towards Torque Capability.