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Three‐dimensional damage morphologies of thermomechanically deformed sintered nanosilver die attachments for power electronics modules (2019)
Journal Article
Agyakwa, P., Dai, J., Li, J., Mouawad, B., Yang, L., Corfield, M., & Johnson, C. (2019). Three‐dimensional damage morphologies of thermomechanically deformed sintered nanosilver die attachments for power electronics modules. Journal of Microscopy, 277(3), 140-153. https://doi.org/10.1111/jmi.12803

© 2019 The Authors. Journal of Microscopy published by John Wiley & Sons Ltd on behalf of Royal Microscopical Society. A time-lapse study of thermomechanical fatigue damage has been undertaken using three-dimensional X-ray computer tomography. Morp... Read More about Three‐dimensional damage morphologies of thermomechanically deformed sintered nanosilver die attachments for power electronics modules.

Study of a Silicon Carbide MOSFET Power Module to Establish the Benefits of Adding Anti-parallel Schottky Diodes (2018)
Conference Proceeding
Trentin, A., Hind, D., Degano, M., Tighe, C., Arevalo, S. L., Yang, L., …Packwood, M. (2018). Study of a Silicon Carbide MOSFET Power Module to Establish the Benefits of Adding Anti-parallel Schottky Diodes. In 2018 IEEE Energy Conversion Congress and Exposition (ECCE) (1829-1836). https://doi.org/10.1109/ECCE.2018.8557415

The majority of commercial Silicon Carbide (SiC) MOSFET based power modules available on the market today also include SiC Schottky diodes placed in anti-parallel with the MOSFETs. Using an accurate electrical and thermal simulation model this paper... Read More about Study of a Silicon Carbide MOSFET Power Module to Establish the Benefits of Adding Anti-parallel Schottky Diodes.

Comparison of thermal and reliability performance between a SiC MOSFET module with embedded decoupling capacitors and commercial Si IGBT power modules (2018)
Conference Proceeding
Yang, L., Agyakwa, P., Corfield, M., Johnson, M., Harris, A., Packwood, M., & Paciura, K. (2018). Comparison of thermal and reliability performance between a SiC MOSFET module with embedded decoupling capacitors and commercial Si IGBT power modules.

This paper characterizes thermal and reliability performance of a SiC MOSFET power module with embedded decoupling capacitors and without anti-parallel diodes. Active and passive temperature cycling, supported by transient thermal impedance character... Read More about Comparison of thermal and reliability performance between a SiC MOSFET module with embedded decoupling capacitors and commercial Si IGBT power modules.

Electrical Performance and Reliability Characterization of a SiC MOSFET Power Module With Embedded Decoupling Capacitors (2018)
Journal Article
O Brien, J., Yang, L., Li, K., Dai, J., Corfield, M., Harris, A., …Johnson, C. M. (2018). Electrical Performance and Reliability Characterization of a SiC MOSFET Power Module With Embedded Decoupling Capacitors. IEEE Transactions on Power Electronics, 33(12), 10594-10601. https://doi.org/10.1109/TPEL.2018.2809923

Integration of decoupling capacitors in SiC MOSFET modules is an advanced solution to mitigate the effect of parasitic inductance induced by module assembly interconnects. In this paper, the switching transient behavior is reported for a 1.2kV SiC MO... Read More about Electrical Performance and Reliability Characterization of a SiC MOSFET Power Module With Embedded Decoupling Capacitors.

Damage Evolution in Al Wire Bonds Subjected to a Junction Temperature Fluctuation of 30K (2016)
Journal Article
Agyakwa, P., Yang, L., Arjmand, E., Evans, P., Corfield, M., & Johnson, C. M. (2016). Damage Evolution in Al Wire Bonds Subjected to a Junction Temperature Fluctuation of 30K. Journal of Electronic Materials, 45, 3659-3672. https://doi.org/10.1007/s11664-016-4519-0

© 2016, The Author(s). Ultrasonically bonded heavy Al wires subjected to a small junction temperature fluctuation under power cycling from 40°C to 70°C were investigated using a non-destructive three-dimensional (3-D) x-ray tomography evaluation appr... Read More about Damage Evolution in Al Wire Bonds Subjected to a Junction Temperature Fluctuation of 30K.

SiC power MOSFETs performance, robustness and technology maturity (2016)
Journal Article
Castellazzi, A., Fayyaz, A., Romano, G., Yang, L., Riccio, M., & Irace, A. (2016). SiC power MOSFETs performance, robustness and technology maturity. Microelectronics Reliability, 58, https://doi.org/10.1016/j.microrel.2015.12.034

Relatively recently, SiC power MOSFETs have transitioned from being a research exercise to becoming an industrial reality. The potential benefits that can be drawn from this technology in the electrical energy conversion domain have been amply discus... Read More about SiC power MOSFETs performance, robustness and technology maturity.

Quantification of cracked area in thermal path of high-powermulti-chip modules using transient thermal impedance measurement (2016)
Journal Article
Eleffendi, M. A., Yang, L., Agyakwa, P., & Johnson, C. M. (2016). Quantification of cracked area in thermal path of high-powermulti-chip modules using transient thermal impedance measurement. Microelectronics Reliability, 59, https://doi.org/10.1016/j.microrel.2016.01.002

Transient thermal impedancemeasurement is commonly used to characterize the dynamic behaviour of the heat flowpath in power semiconductor packages. This can be used to derive a “structure function”which is a graphical representation of the internal s... Read More about Quantification of cracked area in thermal path of high-powermulti-chip modules using transient thermal impedance measurement.

Twenty amino acids at the C-terminus of PA-X are associated with increased influenza A virus replication and pathogenicity (2015)
Journal Article
Gao, H., Sun, Y., Liu, X., Sun, H., Hu, J., Wang, J., …He, Q. (2015). Twenty amino acids at the C-terminus of PA-X are associated with increased influenza A virus replication and pathogenicity. Journal of General Virology, 96(8), https://doi.org/10.1099/vir.0.000143

The PA-X protein, arising from ribosomal frameshift during PA translation, was recently discovered in influenza A virus (IAV). The C-terminal domain ‘X’ of PA-X proteins in IAVs can be classified as full-length (61 aa) or truncated (41 aa). In the ma... Read More about Twenty amino acids at the C-terminus of PA-X are associated with increased influenza A virus replication and pathogenicity.

The contribution of PA-X to the virulence of pandemic 2009 H1N1 and highly pathogenic H5N1 avian influenza viruses (2015)
Journal Article
Gao, H., Sun, Y., Hu, J., Qi, L., Wang, J., Xiong, X., …Liu, J. (in press). The contribution of PA-X to the virulence of pandemic 2009 H1N1 and highly pathogenic H5N1 avian influenza viruses. Scientific Reports, 5(1), https://doi.org/10.1038/srep08262

PA-X is a novel protein encoded by PA mRNA and is found to decrease the pathogenicity of pandemic 1918 H1N1 virus in mice. However, the importance of PA-X proteins in current epidemiologically important influenza A virus strains is not known. In this... Read More about The contribution of PA-X to the virulence of pandemic 2009 H1N1 and highly pathogenic H5N1 avian influenza viruses.

Single pulse avalanche robustness and repetitive stress ageing of SiC power MOSFETs (2014)
Journal Article
Fayyaz, A., Yang, L., Riccio, M., Castellazzi, A., & Irace, A. (2014). Single pulse avalanche robustness and repetitive stress ageing of SiC power MOSFETs. Microelectronics Reliability, 54(9-10), 2185-2190. https://doi.org/10.1016/j.microrel.2014.07.078

This paper presents an extensive electro-thermal characterisation of latest generation silicon carbide (SiC) Power MOSFETs under unclamped inductive switching (UIS) conditions. Tests are carried out to thoroughly understand the single pulse avalanche... Read More about Single pulse avalanche robustness and repetitive stress ageing of SiC power MOSFETs.

A non-destructive study of crack development during thermal cycling of Al wire bonds using x-ray computed tomography (2014)
Conference Proceeding
Agyakwa, P., Yang, L., Corfield, M., & Johnson, C. M. (2014). A non-destructive study of crack development during thermal cycling of Al wire bonds using x-ray computed tomography.

This paper concerns the non-destructive visualisation of the evolution of damage within ultrasonically bonded alumini-um wires using three dimensional x-ray computed tomography. We demonstrate the potential to observe the progressive accumulation of... Read More about A non-destructive study of crack development during thermal cycling of Al wire bonds using x-ray computed tomography.

Physics-of-failure lifetime prediction models for wire bond interconnects in power electronic modules (2013)
Journal Article
Yang, L., Agyakwa, P. A., & Johnson, C. M. (2013). Physics-of-failure lifetime prediction models for wire bond interconnects in power electronic modules. IEEE Transactions on Device and Materials Reliability, 13(1), https://doi.org/10.1109/TDMR.2012.2235836

This paper presents a review of the commonly adopted physics-of-failure-based life prediction models for wire bond interconnects in power electronic modules. In the discussed models, lifetime is generally accounted for by loading temperature extreme... Read More about Physics-of-failure lifetime prediction models for wire bond interconnects in power electronic modules.