Electrical switching of an antiferromagnet

Wadley, P.; Howells, B.; �elezn�, J.; Andrews, C.; Hills, V.; Campion, R. P.; Nov�k, V.; Olejnik, K.; Maccherozzi, F.; Dhesi, S. S.; Martin, S. Y.; Wagner, T.; Wunderlich, J.; Freimuth, F.; Mokrousov, Y.; Kunes, J.; Chauhan, Jasbinder; Grzybowski, M. J.; Rushforth, A. W.; Edmonds, K. W.; Gallagher, B. L.; Jungwirth, T.

doi:10.1126/science.aab1031

All Outputs (4)

Piezo voltage controlled planar hall effect devices (2016)
Journal Article
Zhang, B., Meng, K., Yang, M., Edmonds, K., Zhang, H., Cai, K., …Wang, K. (2016). Piezo voltage controlled planar hall effect devices. Scientific Reports, 6(1), Article 28458. https://doi.org/10.1038/srep28458

The electrical control of the magnetization switching in ferromagnets is highly desired for future spintronic applications. Here we report on hybrid piezoelectric (PZT)/ferromagnetic (Co2FeAl) devices in which the planar Hall voltage in the ferromagn... Read More about Piezo voltage controlled planar hall effect devices.

Three-dimensional Heisenberg critical behavior in the highly disordered dilute ferromagnetic semiconductor (Ga,Mn)As (2016)
Journal Article
Wang, M., Marshall, R. A., Edmonds, K. W., Rushforth, A., Campion, R., & Gallagher, B. (2016). Three-dimensional Heisenberg critical behavior in the highly disordered dilute ferromagnetic semiconductor (Ga,Mn)As. Physical Review B, 93(18), Article 184417. https://doi.org/10.1103/PhysRevB.93.184417

We present detailed studies of critical behavior in the strongly site-disordered dilute ferromagnetic semiconductor (Ga,Mn)As. (Ga,Mn)As has a low saturation magnetization and relatively strong magnetocrystalline anisotropy. This combination of prop... Read More about Three-dimensional Heisenberg critical behavior in the highly disordered dilute ferromagnetic semiconductor (Ga,Mn)As.

Spin-orbit torque in Pt/CoNiCo/Pt symmetric devices (2016)
Journal Article
Yang, M., Cai, K., Ju, H., Edmonds, K., Yang, G., Liu, S., …Wang, K. (2016). Spin-orbit torque in Pt/CoNiCo/Pt symmetric devices. Scientific Reports, 6, https://doi.org/10.1038/srep20778

Current induced magnetization switching by spin-orbit torques offers an energy-efficient means of writing information in heavy metal/ferromagnet (FM) multilayer systems. The relative contributions of field-like torques and damping-like torques to the... Read More about Spin-orbit torque in Pt/CoNiCo/Pt symmetric devices.

Electrical switching of an antiferromagnet (2016)
Journal Article
Wadley, P., Howells, B., Železný, J., Andrews, C., Hills, V., Campion, R. P., …Jungwirth, T. (2016). Electrical switching of an antiferromagnet. Science, 351(6273), 587-590. https://doi.org/10.1126/science.aab1031

Antiferromagnets are hard to control by external magnetic fields because of the alternating directions of magnetic moments on individual atoms and the resulting zero net magnetization. However, relativistic quantum mechanics allows for generating cur... Read More about Electrical switching of an antiferromagnet.