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All Outputs (12)

Design Considerations for High-Voltage High-Current Bi-Directional DC Solid-State Circuit Breaker (SSCB) for Aerospace Applications (2021)
Conference Proceeding
Fayyaz, A., Wang, Z., Ortiz, M. U., Yang, T., & Wheeler, P. (2021). Design Considerations for High-Voltage High-Current Bi-Directional DC Solid-State Circuit Breaker (SSCB) for Aerospace Applications. In 2021 23rd European Conference on Power Electronics and Applications (EPE'21 ECCE Europe). https://doi.org/10.23919/epe21ecceeurope50061.2021.9570659

Design of a high-voltage and high-current solid-state circuit breaker (SSCB) for aerospace applications is highly challenging, as the overall system should comply with the most stringent operating environment. In addition, the implemented power semic... Read More about Design Considerations for High-Voltage High-Current Bi-Directional DC Solid-State Circuit Breaker (SSCB) for Aerospace Applications.

SiC power MOSFETs Threshold-voltage hysteresis and its impact on Short Circuit operation (2019)
Conference Proceeding
Asllani, B., Morel, H., Planson, D., Fayyaz, A., & Castellazzi, A. (2019). SiC power MOSFETs Threshold-voltage hysteresis and its impact on Short Circuit operation. . https://doi.org/10.1109/ESARS-ITEC.2018.8607547

V TH subthreshold hysteresis is an aspect of MOSFET's threshold instabilities that is gaining interests in last few years. As a matter of fact, reliability concerns are raised due to the fluctuation of the threshold voltage depending on the previous... Read More about SiC power MOSFETs Threshold-voltage hysteresis and its impact on Short Circuit operation.

Effect of Parameters Variability on the Performance of SiC MOSFET Modules (2018)
Conference Proceeding
Borghese, A., Riccio, M., Breglio, G., Fayyaz, A., Castellazzi, A., Irace, A., & Marese, L. (2018). Effect of Parameters Variability on the Performance of SiC MOSFET Modules. In Proceedings on 2018 IEEE International Conference on Electrical Systems for Aircraft, Railway, Ship Propulsion and Road Vehicles & International Transportation Electrification Conference (ESARS-ITEC) (1-5). https://doi.org/10.1109/ESARS-ITEC.2018.8607593

This paper introduces a statistical analysis of the impact of devices parameters dispersion on the performances of parallel connected SiC MOSFETs. To this purpose, the statistical fluctuations of threshold voltage and current factor are evaluated on... Read More about Effect of Parameters Variability on the Performance of SiC MOSFET Modules.

Analysis of device and circuit parameters variability in SiC MOSFETs-based multichip power module (2018)
Conference Proceeding
Riccio, M., Borghese, A., Romano, G., D 'alessandro, V., Fayyaz, A., Castellazzi, A., …Irace, A. (2018). Analysis of device and circuit parameters variability in SiC MOSFETs-based multichip power module. In Power Electronics and Applications (EPE'18 ECCE Europe), 2018 20th European Conference

In this contribution, a previously developed temperature-dependent SPICE model for SiC power MOSFETs is calibrated on experimental data of commercially available devices. Thereafter, its features are exploited for dynamic ET simulations of paralleled... Read More about Analysis of device and circuit parameters variability in SiC MOSFETs-based multichip power module.

P-gate GaN HEMT gate-driver design for joint optimization of switching performance, freewheeling conduction and short-circuit robustness (2018)
Conference Proceeding
Wu, H., Fayyaz, A., & Castellazzi, A. (2018). P-gate GaN HEMT gate-driver design for joint optimization of switching performance, freewheeling conduction and short-circuit robustness. In Proceedings of the 30th International Symposium on Power Semiconductor Devices and ICs, 13-17 May 2018, Chicago, USA (232-235). https://doi.org/10.1109/ISPSD.2018.8393645

This paper proposes the design and prototype development and testing of a gate-driver which enables to jointly optimize the performance in application of gate-injection type high electron mobility transistors, taking into account a number of diverse... Read More about P-gate GaN HEMT gate-driver design for joint optimization of switching performance, freewheeling conduction and short-circuit robustness.

Multi-Chip SiC MOSFET Power Modules for Standard Manufacturing, Mounting and Cooling (2018)
Conference Proceeding
Castellazzi, A., Fayyaz, A., Gurpinar, E., Hussein, A., Li, J., & Mouawad, B. (2018). Multi-Chip SiC MOSFET Power Modules for Standard Manufacturing, Mounting and Cooling. In The 2018 International Power Electronics Conference - EECE Asia - IPEC 2018 (130-136). https://doi.org/10.23919/IPEC.2018.8507834

Taking full advantage of the superior characteristics of SiC Power MOSFETs in the application requires the development of bespoke packaging solutions. Their design needs to thoroughly encompass electromagnetic and electro-thermal aspects to yield maj... Read More about Multi-Chip SiC MOSFET Power Modules for Standard Manufacturing, Mounting and Cooling.

Single pulse short-circuit robustness and repetitive stress aging of GaN GITs (2018)
Conference Proceeding
Castellazzi, A., Fayyaz, A., Zhu, S., Oeder, T., & Pfost, M. (2018). Single pulse short-circuit robustness and repetitive stress aging of GaN GITs. In Proceedings of 2018 IEEE International Reliability Physics Symposium (IRPS), 11-15 March 2018, Burlingame, California, USA (4E.1-1-4E.1-10). https://doi.org/10.1109/IRPS.2018.8353593

Short-circuit withstand capability is a key requirement for semiconductor power devices in a number of strategic application domains, including traction, renewable energies and power distribution. Indeed, though clearly a non-intentional operational... Read More about Single pulse short-circuit robustness and repetitive stress aging of GaN GITs.

Static and dynamic TSEPs of SiC and GaN transistors (2018)
Conference Proceeding
Zhu, S., Fayyaz, A., & Castellazzi, A. (2018). Static and dynamic TSEPs of SiC and GaN transistors.

This paper investigates the static and dynamic temperature sensitive electrical parameters (TSEPs) for both SiC and GaN transistors. It is shown that both the qualitative and quantitative temperature characteristics of these parameters are various wh... Read More about Static and dynamic TSEPs of SiC and GaN transistors.

Influence of gate bias on the avalanche ruggedness of SiC power MOSFETs (2017)
Conference Proceeding
Fayyaz, A., Castellazzi, A., Romano, G., Riccio, M., Urresti, J., & Wright, N. (2017). Influence of gate bias on the avalanche ruggedness of SiC power MOSFETs.

This paper investigates the effect of negative gate bias voltage (VGS) on the avalanche breakdown robustness of commercial state-of-the-art silicon carbide (SiC) power MOSFETs. The device’s ability to withstand energy dissipation during avalanche reg... Read More about Influence of gate bias on the avalanche ruggedness of SiC power MOSFETs.

Transient out-of-SOA robustness of SiC power MOSFETs (2017)
Conference Proceeding
Castellazzi, A., Fayyaz, A., Romano, G., Riccio, M., Irace, A., Urresti-Ibanez, J., & Wright, N. (2017). Transient out-of-SOA robustness of SiC power MOSFETs.

Beyond their main function of high-frequency switches in modulated power converters, solid-state power devices are required in many application domains to also ensure robustness against a number of overload operational conditions. This paper consider... Read More about Transient out-of-SOA robustness of SiC power MOSFETs.

UIS failure mechanism of SiC power MOSFETs (2016)
Conference Proceeding
Fayyaz, A., Castellazzi, A., Romano, G., Riccio, M., Urresti, J., & Wright, N. (2016). UIS failure mechanism of SiC power MOSFETs.

This paper investigates the failure mechanism of SiC power MOSFETs during avalanche breakdown under unclamped inductive switching (UIS) test regime. Switches deployed within motor drive applications could experience undesired avalanche breakdown even... Read More about UIS failure mechanism of SiC power MOSFETs.

Influence of design parameters on the short-circuit ruggedness of SiC Power MOSFETs (2016)
Conference Proceeding
Romano, G., Riccio, M., Maresca, L., Fayyaz, A., & Castellazzi, A. (in press). Influence of design parameters on the short-circuit ruggedness of SiC Power MOSFETs.

This work aims to present an investigation on short-circuit (SC) failure behaviour of SiC Power MOSFETs due to the onset of thermal runaway. As inferable from experimental outcomes, it is related to the formation of hotspot, whose exact location is m... Read More about Influence of design parameters on the short-circuit ruggedness of SiC Power MOSFETs.