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Enhanced Optical Emission from 2D InSe Bent onto Si‐Pillars (2020)
Journal Article
Kovalyuk, Z. D., Huffaker, D. L., Chang, T., Bhuiyan, M. A., Kudrynskyi, Z. R., Mazumder, D., …Patanè, A. (2020). Enhanced Optical Emission from 2D InSe Bent onto Si‐Pillars. Advanced Optical Materials, https://doi.org/10.1002/adom.202000828

Controlling the propagation and intensity of an optical signal is central to several technologies ranging from quantum communication to signal processing. These require a versatile class of functional materials with tailored electronic and optical pr... Read More about Enhanced Optical Emission from 2D InSe Bent onto Si‐Pillars.

New Polymorphs of Two-Dimensional Indium Selenide with Enhanced Electronic Properties (2020)
Journal Article
Sun, Y., Li, Y., Li, T., Biswas, K., Patanè, A., & Zhang, L. (2020). New Polymorphs of Two-Dimensional Indium Selenide with Enhanced Electronic Properties. Advanced Functional Materials, https://doi.org/10.1002/adfm.202001920

The two-dimensional (2D) semiconductor indium selenide (InSe) has attracted significant interest due its unique electronic band structure, high electron mobility and wide tunability of its band gap energy achieved by varying the layer thickness. All... Read More about New Polymorphs of Two-Dimensional Indium Selenide with Enhanced Electronic Properties.

The Interaction of Hydrogen with the van der Waals Crystal γ-InSe (2020)
Journal Article
Felton, J., Blundo, E., Ling, S., Glover, J., Kudrynskyi, Z. R., Makarovsky, O., …Patané, A. (2020). The Interaction of Hydrogen with the van der Waals Crystal γ-InSe. Molecules, 25(11), https://doi.org/10.3390/molecules25112526

The emergence of the hydrogen economy requires development in the storage, generation and sensing of hydrogen. The indium selenide (γ-InSe) van der Waals (vdW) crystal shows promise for technologies in all three of these areas. For these applications... Read More about The Interaction of Hydrogen with the van der Waals Crystal γ-InSe.

Imaging shape and strain in nanoscale engineered semiconductors for photonics by coherent x-ray diffraction (2020)
Journal Article
Berenguer, F., Pettinari, G., Felici, M., Balakrishnan, N., Clark, J. N., Ravy, S., …Ciatto, G. (2020). Imaging shape and strain in nanoscale engineered semiconductors for photonics by coherent x-ray diffraction. Communications Materials, 1, https://doi.org/10.1038/s43246-020-0021-6

Coherent x-ray diffractive imaging is a nondestructive technique that extracts three-dimensional electron density and strain maps from materials with nanometer resolution. It has been utilized for materials in a range of applications, and has signifi... Read More about Imaging shape and strain in nanoscale engineered semiconductors for photonics by coherent x-ray diffraction.

Room temperature upconversion electroluminescence from a mid-infrared In(AsN) tunnelling diode (2020)
Journal Article
Di Paola, D. M., Lu, Q., Repiso, E., Kesaria, M., Makarovsky, O., Krier, A., & Patanè, A. (2020). Room temperature upconversion electroluminescence from a mid-infrared In(AsN) tunnelling diode. Applied Physics Letters, 116(14), https://doi.org/10.1063/5.0002407

Light emitting diodes (LEDs) in the mid-infrared (MIR) spectral range require material systems with tailored optical absorption and emission at wavelengths λ > 2 μm. Here, we report on MIR LEDs based on In(AsN)/(InAl)As resonant tunneling diodes (RTD... Read More about Room temperature upconversion electroluminescence from a mid-infrared In(AsN) tunnelling diode.

Photoluminescence dynamics in few-layer InSe (2020)
Journal Article
Venanzi, T., Arora, H., Winnerl, S., Pashkin, A., Chava, P., Patane, A., …Schneider, H. (2020). Photoluminescence dynamics in few-layer InSe. Physical Review Materials, 4(4), https://doi.org/10.1103/PhysRevMaterials.4.044001

We study the optical properties of thin flakes of InSe encapsulated in hBN. More specifically, we investigate the photoluminescence (PL) emission and its dependence on sample thickness and temperature. Through the analysis of the PL lineshape, we dis... Read More about Photoluminescence dynamics in few-layer InSe.

Design of van der Waals Interfaces for Broad-Spectrum Optoelectronics (2020)
Journal Article
Ubrig, N., Ponomarev, E., Zultak, J., Domaretskiy, D., Zólyomi, V., Terry, D., …Morpurgo, A. F. (2020). Design of van der Waals Interfaces for Broad-Spectrum Optoelectronics. Nature Materials, https://doi.org/10.1038/s41563-019-0601-3

Van der Waals (vdW) interfaces based on 2D materials are promising for optoelectronics, as interlayer transitions between different compounds allow tailoring of the spectral response over a broad range. However, issues such as lattice mismatch or a s... Read More about Design of van der Waals Interfaces for Broad-Spectrum Optoelectronics.

Resonant tunnelling into the two-dimensional subbands of InSe layers (2020)
Journal Article
Kudrynskyi, Z. R., Kerfoot, J., Mazumder, D., Greenaway, M. T., Vdovin, E. E., Makarovsky, O., …Patanè, A. (2020). Resonant tunnelling into the two-dimensional subbands of InSe layers. Communications Physics, 3(1), https://doi.org/10.1038/s42005-020-0290-x

Two-dimensional (2D) van der Waals (vdW) crystals have attracted considerable interest for digital electronics beyond Si-based complementary metal oxide semiconductor technologies. Despite the transformative success of Si-based devices, there are lim... Read More about Resonant tunnelling into the two-dimensional subbands of InSe layers.

Van der Waals SnSe2(1-x)S2x alloys: composition-dependent bowing coefficient and electron-phonon interaction (2020)
Journal Article
Kudrynskyi, Z. R., Wang, X., Sutcliffe, J., Bhuiyan, M. A., Fu, Y., Yang, Z., …Patanè, A. (2020). Van der Waals SnSe2(1-x)S2x alloys: composition-dependent bowing coefficient and electron-phonon interaction. Advanced Functional Materials, 30(9), https://doi.org/10.1002/adfm.201908092

The design of advanced functional materials with customized properties often requires the use of an alloy. This approach has been used for decades, but only recently to create van der Waals (vdW) alloys for applications in electronics, optoelectronic... Read More about Van der Waals SnSe2(1-x)S2x alloys: composition-dependent bowing coefficient and electron-phonon interaction.

Two-Dimensional Covalent Crystals by Chemical Conversion of Thin van der Waals Materials (2019)
Journal Article
Sreepal, V., Yagmurcukardes, M., Vasu, K. S., Kelly, D. J., Taylor, S. F. R., Kravets, V. G., …Nair, R. R. (2019). Two-Dimensional Covalent Crystals by Chemical Conversion of Thin van der Waals Materials. Nano Letters, 19(9), 6475-6481. https://doi.org/10.1021/acs.nanolett.9b02700

Most of the studied two-dimensional (2D) materials have been obtained by exfoliation of van der Waals crystals. Recently, there has been growing interest in fabricating synthetic 2D crystals which have no layered bulk analogues. These efforts have be... Read More about Two-Dimensional Covalent Crystals by Chemical Conversion of Thin van der Waals Materials.

Hybrid light emitting diodes based on stable, high brightness all-inorganic CsPbI 3 perovskite nanocrystals and InGaN (2019)
Journal Article
Zhang, C., Turyanska, L., Cao, H., Zhao, L., Fay, M. W., Temperton, R., …Patanè, A. (2019). Hybrid light emitting diodes based on stable, high brightness all-inorganic CsPbI 3 perovskite nanocrystals and InGaN. Nanoscale, 11(28), 13450-13457. https://doi.org/10.1039/C9NR03707A

Despite important advances in the synthesis of inorganic perovskite nanocrystals (NCs), the long-term instability and degradation of their quantum yield (QY) over time need to be addressed to enable the further development and exploitation of these n... Read More about Hybrid light emitting diodes based on stable, high brightness all-inorganic CsPbI 3 perovskite nanocrystals and InGaN.

Realization of Universal Quantum Gates with Spin-Qudits in Colloidal Quantum Dots (2019)
Journal Article
Moro, F., Fielding, A. J., Turyanska, L., & Patanè, A. (2019). Realization of Universal Quantum Gates with Spin-Qudits in Colloidal Quantum Dots. Advanced Quantum Technologies, 1-6. doi:10.1002/qute.201900017

Hyperfine interactions in a single Mn‐ion confined in a quantum dot (QD) are exploited to create a qudit, that is, a multilevel quantum‐bit system, with well‐defined, addressable, and robust set of spin states for the realization of universal quantum... Read More about Realization of Universal Quantum Gates with Spin-Qudits in Colloidal Quantum Dots.

Enhanced photoresponse in MoTe2 photodetectors with asymmetric graphene contacts (2019)
Journal Article
Wei, X., Yan, F., Lv, Q., Zhu, W., Hu, C., Patane, A., & Wang, K. (2019). Enhanced photoresponse in MoTe2 photodetectors with asymmetric graphene contacts. Advanced Optical Materials, 7(12), doi:10.1002/adom.201900190

Atomically thin two dimensional (2D) materials are promising candidates for miniaturized high-performance optoelectronic devices. Here, we report on multilayer MoTe2 photodetectors contacted with asymmetric electrodes based on n- and p-type graphene... Read More about Enhanced photoresponse in MoTe2 photodetectors with asymmetric graphene contacts.

Tunnel spectroscopy of localised electronic states in hexagonal boron nitride (2018)
Journal Article
Greenaway, M., Vdovin, E., Ghazaryan, D., Misra, A., Mischenko, A., Cao, Y., …Eaves, L. (2018). Tunnel spectroscopy of localised electronic states in hexagonal boron nitride. Communications Physics, 1, doi:10.1038/s42005-018-0097-1

Hexagonal boron nitride is a large band gap layered crystal, frequently incorporated in van der Waals heterostructures as an insulating or tunnel barrier. Localised states with energies within its band gap can emit visible light, relevant to applicat... Read More about Tunnel spectroscopy of localised electronic states in hexagonal boron nitride.

Photo-quantum Hall effect and light-induced charge transfer at the interface of graphene/InSe heterostructures (2018)
Journal Article
Bhuiyan, M. A., Kudrynskyi, Z. R., Mazumder, D., Greener, J. D., Makarovsky, O., Mellor, C. J., …Patanè, A. (2019). Photo-quantum Hall effect and light-induced charge transfer at the interface of graphene/InSe heterostructures. Advanced Functional Materials, 29(3), https://doi.org/10.1002/adfm.201805491

The transfer of electronic charge across the interface of two van der Waals crystals can underpin the operation of a new class of functional devices. Amongst van der Waals semiconductors, an exciting and rapidly growing development involves the “post... Read More about Photo-quantum Hall effect and light-induced charge transfer at the interface of graphene/InSe heterostructures.

Coherent acoustic phonons in van der Waals nanolayers and heterostructures (2018)
Journal Article
Greener, J. D., Akimov, A. V., Gusev, V., Kudrynskyi, Z., Beton, P. H., Kovalyuk, Z. D., …Patanè, A. (2018). Coherent acoustic phonons in van der Waals nanolayers and heterostructures. Physical Review B, 98(7), https://doi.org/10.1103/PhysRevB.98.075408

Terahertz (THz) and sub-THz coherent acoustic phonons have been successfully used as probes of various quantum systems. Since their wavelength is in the nanometer range, they can probe nanostructures buried below a surface with nanometer resolution a... Read More about Coherent acoustic phonons in van der Waals nanolayers and heterostructures.

Magnetotransport and lateral confinement in an InSe van der Waals heterostructure (2018)
Journal Article
Lee, Y., Pisoni, R., Overweg, H., Eich, M., Rickhaus, P., Patane, A., …Ensslin, K. (2018). Magnetotransport and lateral confinement in an InSe van der Waals heterostructure. 2D Materials, 5(3), doi:10.1088/2053-1583/aacb49

In the last six years, Indium selenide (InSe) has appeared as a new van der Waals heterostructure platform which has been extensively studied due to its unique electronic and optical properties. Such as transition metal dichalcogenides (TMDCs), the c... Read More about Magnetotransport and lateral confinement in an InSe van der Waals heterostructure.

Improved performance of InSe field-effect transistors by channel encapsulation (2018)
Journal Article
Liang, G., Wang, Y., Han, L., Yang, Z., Xin, Q., Kudrynskyi, Z. R., …Song, A. (2018). Improved performance of InSe field-effect transistors by channel encapsulation. Semiconductor Science and Technology, 33(6), doi:10.1088/1361-6641/aab62b

Due to the high electron mobility and photo-responsivity, InSe is considered as an excellent candidate for next generation electronics and optoelectronics. In particular, in contrast to many high-mobility two-dimensional (2D) materials, such as phosp... Read More about Improved performance of InSe field-effect transistors by channel encapsulation.


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