All Outputs (2)

High-Frequency Elastic Coupling at the Interface of van der Waals Nanolayers Imaged by Picosecond Ultrasonics (2019)
Journal Article
Greener, J. D., de Lima Savi, E., Akimov, A. V., Raetz, S., Kudrynskyi, Z., Kovalyuk, Z. D., …Gusev, V. E. (2019). High-Frequency Elastic Coupling at the Interface of van der Waals Nanolayers Imaged by Picosecond Ultrasonics. ACS Nano, 13(10), 11530-11537. https://doi.org/10.1021/acsnano.9b05052

Although the topography of van de Waals (vdW) layers and heterostructures can be imaged by scanning probe microscopy, high-frequency interface elastic properties are more difficult to assess. These can influence the stability, reliability and perform... Read More about High-Frequency Elastic Coupling at the Interface of van der Waals Nanolayers Imaged by Picosecond Ultrasonics.

Formation and healing of defects in atomically thin GaSe and InSe (2019)
Journal Article
Hopkinson, D. G., Zólyomi, V., Rooney, A. P., Clark, N., Terry, D. J., Hamer, M., …Haigh, S. J. (2019). Formation and healing of defects in atomically thin GaSe and InSe. ACS Nano, 13(5), 5112-5123. https://doi.org/10.1021/acsnano.8b08253

© 2019 American Chemical Society. Two dimensional III-VI metal monochalcogenide materials, such as GaSe and InSe, are attracting considerable attention due to their promising electronic and optoelectronic properties. Here, an investigation of point a... Read More about Formation and healing of defects in atomically thin GaSe and InSe.