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Direct Measurements of Anisotropic Thermal Transport in γ-InSe Nanolayers via Cross-Sectional Scanning Thermal Microscopy (2023)
Journal Article
Gonzalez-Munoz, S., Agarwal, K., Castanon, E. G., Kudrynskyi, Z. R., Kovalyuk, Z. D., Spièce, J., …Kolosov, O. V. (2023). Direct Measurements of Anisotropic Thermal Transport in γ-InSe Nanolayers via Cross-Sectional Scanning Thermal Microscopy. Advanced Materials Interfaces, 10(17), Article 2300081. https://doi.org/10.1002/admi.202300081

Van der Waals (vdW) atomically thin materials and their heterostructures offer a versatile platform for the management of nanoscale heat transport and the design of novel thermoelectrics. These require the measurement of highly anisotropic heat trans... Read More about Direct Measurements of Anisotropic Thermal Transport in γ-InSe Nanolayers via Cross-Sectional Scanning Thermal Microscopy.

Subnanometer-Wide Indium Selenide Nanoribbons (2023)
Journal Article
Cull, W. J., Skowron, S. T., Hayter, R., Stoppiello, C. T., Rance, G. A., Biskupek, J., …Khlobystov, A. N. (2023). Subnanometer-Wide Indium Selenide Nanoribbons. ACS Nano, 17(6), 6062-6072. https://doi.org/10.1021/acsnano.3c00670

Indium selenides (InxSey) have been shown to retain several desirable properties, such as ferroelectricity, tunable photoluminescence through temperature-controlled phase changes, and high electron mobility when confined to two dimensions (2D). In th... Read More about Subnanometer-Wide Indium Selenide Nanoribbons.

Graphene FETs with high and low mobilities have universal temperature-dependent properties (2023)
Journal Article
Gosling, J., Morozov, S. V., Vdovin, E. E., Greenaway, M. T., Khanin, Y. N., Kudrynskyi, Z., …Makarovsky, O. (2023). Graphene FETs with high and low mobilities have universal temperature-dependent properties. Nanotechnology, 34(12), Article 125702. https://doi.org/10.1088/1361-6528/aca981

We use phenomenological modelling and detailed experimental studies of charge carrier transport to investigate the dependence of the electrical resistivity,ρ, on gate voltage,Vg, for a series of monolayer graphene field effect transistors with mobili... Read More about Graphene FETs with high and low mobilities have universal temperature-dependent properties.

Van der Waals interfaces in multilayer junctions for ultraviolet photodetection (2022)
Journal Article
Xie, S., Shiffa, M., Shiffa, M., Kudrynskyi, Z. R., Makarovskiy, O., Kovalyuk, Z. D., …Patanè, A. (2022). Van der Waals interfaces in multilayer junctions for ultraviolet photodetection. npj 2D Materials and Applications, 6(1), Article 61. https://doi.org/10.1038/s41699-022-00338-0

Developments in semiconductor science have led to the miniaturization and improvement of light detection technologies for many applications. However, traditional pn-junctions or three-dimensional device geometries for detection of ultraviolet (UV) li... Read More about Van der Waals interfaces in multilayer junctions for ultraviolet photodetection.

Hydrogen-Induced Conversion of SnS2 into SnS or Sn: A Route to Create SnS2/SnS Heterostructures (2022)
Journal Article
Patanè, A., Felton, J., Blundo, E., Kudrynskyi, Z., Ling, S., Bradford, J., …Patane, A. (2022). Hydrogen-Induced Conversion of SnS2 into SnS or Sn: A Route to Create SnS2/SnS Heterostructures. Small, 18(33), Article 2202661. https://doi.org/10.1002/smll.202202661

The family of van der Waals (vdW) materials is large and diverse with applications ranging from electronics and optoelectronics to catalysis and chemical storage. However, despite intensive research, there remains significant knowledge-gaps pertainin... Read More about Hydrogen-Induced Conversion of SnS2 into SnS or Sn: A Route to Create SnS2/SnS Heterostructures.

Memristive effects due to charge transfer in graphene gated through ferroelectric CuInP2S6 (2022)
Journal Article
Dey, A., Yan, W., Balakrishnan, N., Xie, S., Kudrynskyi, Z. R., Makarovskiy, O., …Patanè, A. (2022). Memristive effects due to charge transfer in graphene gated through ferroelectric CuInP2S6. 2D Materials, 9(3), Article 035003. https://doi.org/10.1088/2053-1583/ac6191

Ferroelectricity at the nanometre scale can drive the miniaturisation and wide application of ferroelectric devices for memory and sensing applications. The two-dimensional van der Waals (2D-vdWs) ferroelectrics CuInP2S6 (CIPS) has attracted much att... Read More about Memristive effects due to charge transfer in graphene gated through ferroelectric CuInP2S6.

Terahertz control of photoluminescence emission in few-layer InSe (2022)
Journal Article
Venanzi, T., Selig, M., Pashkin, A., Winnerl, S., Katzer, M., Arora, H., …Schneider, H. (2022). Terahertz control of photoluminescence emission in few-layer InSe. Applied Physics Letters, 120(9), Article 092104. https://doi.org/10.1063/5.0080784

A promising route for the development of opto-electronic technology is to use terahertz radiation to modulate the optical properties of semiconductors. Here, we demonstrate the dynamical control of photoluminescence (PL) emission in few-layer InSe us... Read More about Terahertz control of photoluminescence emission in few-layer InSe.

High-Performance Phototransistors by Alumina Encapsulation of a 2D Semiconductor with Self-Aligned Contacts (2022)
Journal Article
Liang, G., Wang, Y., Zhang, J., Kudrynskyi, Z. R., Kovalyuk, Z., Patanè, A., …Song, A. (2022). High-Performance Phototransistors by Alumina Encapsulation of a 2D Semiconductor with Self-Aligned Contacts. Advanced Electronic Materials, 8(5), Article 2100954. https://doi.org/10.1002/aelm.202100954

2D semiconductors are promising candidates for next generation electronics and optoelectronics. However, their exposure to air and/or resists during device fabrication can cause considerable degradation of material quality, hindering their study and... Read More about High-Performance Phototransistors by Alumina Encapsulation of a 2D Semiconductor with Self-Aligned Contacts.

Large Tunneling Magnetoresistance in van der Waals Ferromagnet/Semiconductor Heterojunctions (2021)
Journal Article
Zhu, W., Lin, H., Yan, F., Hu, C., Wang, Z., Zhao, L., …Wang, K. (2021). Large Tunneling Magnetoresistance in van der Waals Ferromagnet/Semiconductor Heterojunctions. Advanced Materials, 33(51), Article 2104658. https://doi.org/10.1002/adma.202104658

2D layered chalcogenide semiconductors have been proposed as a promising class of materials for low-dimensional electronic, optoelectronic, and spintronic devices. Here, all-2D van der Waals vertical spin-valve devices, that combine the 2D layered se... Read More about Large Tunneling Magnetoresistance in van der Waals Ferromagnet/Semiconductor Heterojunctions.

Tunable spin-orbit coupling in two-dimensional InSe (2021)
Journal Article
Ceferino, A., Magorrian, S. J., Zólyomi, V., Bandurin, D. A., Geim, A. K., Patanè, A., …Fal'Ko, V. I. (2021). Tunable spin-orbit coupling in two-dimensional InSe. Physical Review B, 104(12), Article 125432. https://doi.org/10.1103/PhysRevB.104.125432

We demonstrate that spin-orbit coupling (SOC) strength for electrons near the conduction band edge in few-layer γ-InSe films can be tuned over a wide range. This tunability is the result of a competition between film-thickness-dependent intrinsic and... Read More about Tunable spin-orbit coupling in two-dimensional InSe.

Ferroelectric semiconductor junctions based on graphene/In2Se3/graphene van der Waals heterostructures (2021)
Journal Article
Xie, S., Dey, A., Yan, W., Kudrynskyi, Z. R., Balakrishnan, N., Makarovskiy, O., …Patanè, A. (2021). Ferroelectric semiconductor junctions based on graphene/In2Se3/graphene van der Waals heterostructures. 2D Materials, 8(4), Article 045020. https://doi.org/10.1088/2053-1583/ac1ada

The miniaturization of ferroelectric devices offers prospects for non-volatile memories, low-power electrical switches and emerging technologies beyond existing Si-based integrated circuits. An emerging class of ferroelectrics is based on van der Waa... Read More about Ferroelectric semiconductor junctions based on graphene/In2Se3/graphene van der Waals heterostructures.

Heavy carrier effective masses in van der Waals semiconductor Sn(SeS) revealed by high magnetic fields up to 150 T (2021)
Journal Article
Yang, Z., Wang, X., Felton, J., Kudrynskyi, Z., Gen, M., Nomura, T., …Patanè, A. (2021). Heavy carrier effective masses in van der Waals semiconductor Sn(SeS) revealed by high magnetic fields up to 150 T. Physical Review B (Condensed Matter), 104(8), Article 085206. https://doi.org/10.1103/PhysRevB.104.085206

The SnSe2(1-x)S2x alloy is a van der Waals semiconductor with versatile, tunable electronic properties and prospects for future applications ranging from electronics to thermoelectrics and superconductivity. Its band structure and carrier effective m... Read More about Heavy carrier effective masses in van der Waals semiconductor Sn(SeS) revealed by high magnetic fields up to 150 T.

Resonance and antiresonance in Raman scattering in GaSe and InSe crystals (2021)
Journal Article
Osiekowicz, M., Staszczuk, D., Olkowska-Pucko, K., Kipczak, Ł., Grzeszczyk, M., Zinkiewicz, M., …Molas, M. R. (2021). Resonance and antiresonance in Raman scattering in GaSe and InSe crystals. Scientific Reports, 11(1), Article 924. https://doi.org/10.1038/s41598-020-79411-x

The temperature effect on the Raman scattering efficiency is investigated in ?-GaSe and ?-InSe crystals. We found that varying the temperature over a broad range from 5 to 350 K permits to achieve both the resonant conditions and the antiresonance be... Read More about Resonance and antiresonance in Raman scattering in GaSe and InSe crystals.

Anomalous Low Thermal Conductivity of Atomically Thin InSe Probed by Scanning Thermal Microscopy (2021)
Journal Article
Buckley, D., Kudrynskyi, Z. R., Balakrishnan, N., Vincent, T., Mazumder, D., Castanon, E., …Patanè, A. (2021). Anomalous Low Thermal Conductivity of Atomically Thin InSe Probed by Scanning Thermal Microscopy. Advanced Functional Materials, 31(11), Article 2008967. https://doi.org/10.1002/adfm.202008967

The ability of a material to conduct heat influences many physical phenomena, ranging from thermal management in nanoscale devices to thermoelectrics. Van der Waals two dimensional (2D) materials offer a versatile platform to tailor heat transfer due... Read More about Anomalous Low Thermal Conductivity of Atomically Thin InSe Probed by Scanning Thermal Microscopy.

Inter-Flake Quantum Transport of Electrons and Holes in Inkjet-Printed Graphene Devices (2020)
Journal Article
Wang, F., Gosling, J. H., Rance, G. A., Trindade, G. F., Makarovsky, O., Cottam, N. D., …Turyanska, L. (2021). Inter-Flake Quantum Transport of Electrons and Holes in Inkjet-Printed Graphene Devices. Advanced Functional Materials, 31(5), Article 2007478. https://doi.org/10.1002/adfm.202007478

© 2020 The Authors. Advanced Functional Materials published by Wiley-VCH GmbH 2D materials have unique structural and electronic properties with potential for transformative device applications. However, such devices are usually bespoke structures ma... Read More about Inter-Flake Quantum Transport of Electrons and Holes in Inkjet-Printed Graphene Devices.

Enhanced Optical Emission from 2D InSe Bent onto Si?Pillars (2020)
Journal Article
Mazumder, D., Xie, J., Kudrynskyi, Z. R., Wang, X., Makarovsky, O., Bhuiyan, M. A., …Patanè, A. (2020). Enhanced Optical Emission from 2D InSe Bent onto Si‐Pillars. Advanced Optical Materials, 8(18), Article 2000828. https://doi.org/10.1002/adom.202000828

Controlling the propagation and intensity of an optical signal is central to several technologies ranging from quantum communication to signal processing. These require a versatile class of functional materials with tailored electronic and optical pr... Read More about Enhanced Optical Emission from 2D InSe Bent onto Si?Pillars.

The Interaction of Hydrogen with the van der Waals Crystal ?-InSe (2020)
Journal Article
Felton, J., Blundo, E., Ling, S., Glover, J., Kudrynskyi, Z. R., Makarovsky, O., …Patané, A. (2020). The Interaction of Hydrogen with the van der Waals Crystal γ-InSe. Molecules, 25(11), Article 2526. https://doi.org/10.3390/molecules25112526

The emergence of the hydrogen economy requires development in the storage, generation and sensing of hydrogen. The indium selenide (?-InSe) van der Waals (vdW) crystal shows promise for technologies in all three of these areas. For these applications... Read More about The Interaction of Hydrogen with the van der Waals Crystal ?-InSe.

Photoluminescence dynamics in few-layer InSe (2020)
Journal Article
Venanzi, T., Arora, H., Winnerl, S., Pashkin, A., Chava, P., Patane, A., …Schneider, H. (2020). Photoluminescence dynamics in few-layer InSe. Physical Review Materials, 4(4), Article 044001. https://doi.org/10.1103/PhysRevMaterials.4.044001

We study the optical properties of thin flakes of InSe encapsulated in hBN. More specifically, we investigate the photoluminescence (PL) emission and its dependence on sample thickness and temperature. Through the analysis of the PL lineshape, we dis... Read More about Photoluminescence dynamics in few-layer InSe.

Design of van der Waals interfaces for broad-spectrum optoelectronics (2020)
Journal Article
Ubrig, N., Ponomarev, E., Zultak, J., Domaretskiy, D., Zólyomi, V., Terry, D., …Morpurgo, A. F. (2020). Design of van der Waals interfaces for broad-spectrum optoelectronics. Nature Materials, 19, 299-304. https://doi.org/10.1038/s41563-019-0601-3

Van der Waals (vdW) interfaces based on 2D materials are promising for optoelectronics, as interlayer transitions between different compounds allow tailoring of the spectral response over a broad range. However, issues such as lattice mismatch or a s... Read More about Design of van der Waals interfaces for broad-spectrum optoelectronics.

Resonant tunnelling into the two-dimensional subbands of InSe layers (2020)
Journal Article
Kudrynskyi, Z. R., Kerfoot, J., Mazumder, D., Greenaway, M. T., Vdovin, E. E., Makarovsky, O., …Patanè, A. (2020). Resonant tunnelling into the two-dimensional subbands of InSe layers. Communications Physics, 3, Article 16. https://doi.org/10.1038/s42005-020-0290-x

Two-dimensional (2D) van der Waals (vdW) crystals have attracted considerable interest for digital electronics beyond Si-based complementary metal oxide semiconductor technologies. Despite the transformative success of Si-based devices, there are lim... Read More about Resonant tunnelling into the two-dimensional subbands of InSe layers.