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Resonant tunnelling into the two-dimensional subbands of InSe layers (2020)
Journal Article
Kudrynskyi, Z. R., Kerfoot, J., Mazumder, D., Greenaway, M. T., Vdovin, E. E., Makarovsky, O., …Patanè, A. (2020). Resonant tunnelling into the two-dimensional subbands of InSe layers. Communications Physics, 3(1), https://doi.org/10.1038/s42005-020-0290-x

Two-dimensional (2D) van der Waals (vdW) crystals have attracted considerable interest for digital electronics beyond Si-based complementary metal oxide semiconductor technologies. Despite the transformative success of Si-based devices, there are lim... Read More about Resonant tunnelling into the two-dimensional subbands of InSe layers.

Van der Waals SnSe2(1-x)S2x alloys: composition-dependent bowing coefficient and electron-phonon interaction (2020)
Journal Article
Kudrynskyi, Z. R., Wang, X., Sutcliffe, J., Bhuiyan, M. A., Fu, Y., Yang, Z., …Patanè, A. (2020). Van der Waals SnSe2(1-x)S2x alloys: composition-dependent bowing coefficient and electron-phonon interaction. Advanced Functional Materials, 30(9), https://doi.org/10.1002/adfm.201908092

The design of advanced functional materials with customized properties often requires the use of an alloy. This approach has been used for decades, but only recently to create van der Waals (vdW) alloys for applications in electronics, optoelectronic... Read More about Van der Waals SnSe2(1-x)S2x alloys: composition-dependent bowing coefficient and electron-phonon interaction.

Defect-assisted high photoconductive UV-VIS gain in perovskite-decorated graphene transistors (2019)
Journal Article
Cottam, N. D., Zhang, C., Turyanska, L., Eaves, L., Kudrynskyi, Z., Vdovin, E. E., …Makarovsky, O. (2020). Defect-assisted high photoconductive UV-VIS gain in perovskite-decorated graphene transistors. ACS Applied Electronic Materials, 2, 147-154. https://doi.org/10.1021/acsaelm.9b00664

Recent progress in the synthesis of high stability inorganic perovskite nanocrystals (NCs) has led to their increasing use in broadband photodetectors. These NCs are of particular interest for the UV range as they have the potential to extend the wav... Read More about Defect-assisted high photoconductive UV-VIS gain in perovskite-decorated graphene transistors.

Magnetophonon spectroscopy of Dirac fermion scattering by transverse and longitudinal acoustic phonons in graphene (2019)
Journal Article
Greenaway, M. T., Krishna Kumar, R., Kumaravadivel, P., Geim, A. K., & Eaves, L. (2019). Magnetophonon spectroscopy of Dirac fermion scattering by transverse and longitudinal acoustic phonons in graphene. Physical Review B, 100(15), https://doi.org/10.1103/physrevb.100.155120

Recently observed magnetophonon resonances in the magnetoresistance of graphene are investigated using the Kubo formalism. This analysis provides a quantitative fit to the magnetophonon resonances over a wide range of carrier densities. It demonstrat... Read More about Magnetophonon spectroscopy of Dirac fermion scattering by transverse and longitudinal acoustic phonons in graphene.

Two-Dimensional Covalent Crystals by Chemical Conversion of Thin van der Waals Materials (2019)
Journal Article
Sreepal, V., Yagmurcukardes, M., Vasu, K. S., Kelly, D. J., Taylor, S. F. R., Kravets, V. G., …Nair, R. R. (2019). Two-Dimensional Covalent Crystals by Chemical Conversion of Thin van der Waals Materials. Nano Letters, doi:10.1021/acs.nanolett.9b02700

Most of the studied two-dimensional (2D) materials have been obtained by exfoliation of van der Waals crystals. Recently, there has been growing interest in fabricating synthetic 2D crystals which have no layered bulk analogues. These efforts have be... Read More about Two-Dimensional Covalent Crystals by Chemical Conversion of Thin van der Waals Materials.

Strong magnetophonon oscillations in extra-large graphene (2019)
Journal Article
Kumaravadivel, P., Greenaway, M. T., Perello, D., Berdyugin, A., Birkbeck, J., Wengraf, J., …Krishna Kumar, R. (2019). Strong magnetophonon oscillations in extra-large graphene. Nature Communications, 10(1), doi:10.1038/s41467-019-11379-3

Van der Waals materials and their heterostructures offer a versatile platform for studying a variety of quantum transport phenomena due to their unique crystalline properties and the exceptional ability in tuning their electronic spectrum. However, m... Read More about Strong magnetophonon oscillations in extra-large graphene.

Direct band-gap crossover in epitaxial monolayer boron nitride (2019)
Journal Article
Elias, C., Valvin, P., Pelini, T., Summerfield, A., Mellor, C., Cheng, T., …Cassabois, G. (2019). Direct band-gap crossover in epitaxial monolayer boron nitride. Nature Communications, 10, doi:10.1038/s41467-019-10610-5

Hexagonal boron nitride is a large band-gap insulating material which complements the electronic and optical properties of graphene and the transition metal dichalcogenides. However, the intrinsic optical properties of monolayer boron nitride remain... Read More about Direct band-gap crossover in epitaxial monolayer boron nitride.

Tunnel spectroscopy of localised electronic states in hexagonal boron nitride (2018)
Journal Article
Greenaway, M., Vdovin, E., Ghazaryan, D., Misra, A., Mischenko, A., Cao, Y., …Eaves, L. (2018). Tunnel spectroscopy of localised electronic states in hexagonal boron nitride. Communications Physics, 1, doi:10.1038/s42005-018-0097-1

Hexagonal boron nitride is a large band gap layered crystal, frequently incorporated in van der Waals heterostructures as an insulating or tunnel barrier. Localised states with energies within its band gap can emit visible light, relevant to applicat... Read More about Tunnel spectroscopy of localised electronic states in hexagonal boron nitride.

Photo-quantum Hall effect and light-induced charge transfer at the interface of graphene/InSe heterostructures (2018)
Journal Article
Bhuiyan, M. A., Kudrynskyi, Z. R., Mazumder, D., Greener, J. D., Makarovsky, O., Mellor, C. J., …Patanè, A. (2019). Photo-quantum Hall effect and light-induced charge transfer at the interface of graphene/InSe heterostructures. Advanced Functional Materials, 29(3), doi:10.1002/adfm.201805491

The transfer of electronic charge across the interface of two van der Waals crystals can underpin the operation of a new class of functional devices. Amongst van der Waals semiconductors, an exciting and rapidly growing development involves the “post... Read More about Photo-quantum Hall effect and light-induced charge transfer at the interface of graphene/InSe heterostructures.

High-temperature molecular beam epitaxy of hexagonal boron nitride with high active nitrogen fluxes (2018)
Journal Article
Cheng, T. S., Summerfield, A., Mellor, C. J., Khlobystov, A. N., Eaves, L., Foxon, C. T., …Novikov, S. V. (2018). High-temperature molecular beam epitaxy of hexagonal boron nitride with high active nitrogen fluxes. Materials, 11(7), https://doi.org/10.3390/ma11071119

Hexagonal boron nitride (hBN) has attracted much attention as a key component in van der Waals heterostructures and as a wide band gap material for deep-ultraviolet devices. We have recently demonstrated plasma-assisted molecular beam epitaxy (PA-MBE... Read More about High-temperature molecular beam epitaxy of hexagonal boron nitride with high active nitrogen fluxes.

Moiré-modulated conductance of hexagonal boron nitride tunnel barriers (2018)
Journal Article
Summerfield, A., Kozikov, A., Cheng, T. S., Davies, A., Cho, Y., Khlobystov, A. N., …Beton, P. H. (in press). Moiré-modulated conductance of hexagonal boron nitride tunnel barriers. Nano Letters, doi:10.1021/acs.nanolett.8b01223

Monolayer hexagonal boron nitride (hBN) tunnel barriers investigated using conductive atomic force microscopy reveal moiré patterns in the spatial maps of their tunnel conductance consistent with the formation of a moiré superlattice between the hB... Read More about Moiré-modulated conductance of hexagonal boron nitride tunnel barriers.

Magnon-assisted tunnelling in van der Waals heterostructures based on CrBr3 (2018)
Journal Article
Ghazaryan, D., Greenaway, M., Wang, Z., Guarochico-Moreira, V., Vera-Marun, I., Yin, J., …Misra, A. (2018). Magnon-assisted tunnelling in van der Waals heterostructures based on CrBr3. Nature Electronics, 1(6), doi:10.1038/s41928-018-0087-z

Van der Waals heterostructures, which are composed of layered two-dimensional materials, offer a platform to investigate a diverse range of physical phenomena and could be of use in a variety of applications. Heterostructures containing two-dimension... Read More about Magnon-assisted tunnelling in van der Waals heterostructures based on CrBr3.

High-order fractal states in graphene superlattices (2018)
Journal Article
Krishna Kumar, R., Mishchenko, A., Chen, X., Pezzini, S., Auton, G., Ponomarenko, L., …Geim, A. (2018). High-order fractal states in graphene superlattices. Proceedings of the National Academy of Sciences, 115(20), doi:10.1073/pnas.1804572115

Graphene superlattices were shown to exhibit high-temperature quantum oscillations due to periodic emergence of delocalized Bloch states in high magnetic fields such that unit fractions of the flux quantum pierce a superlattice unit cell. Under these... Read More about High-order fractal states in graphene superlattices.

Epitaxial growth of γ-InSe and α, β, and γ-In2Se3 on ε-GaSe (2018)
Journal Article
Balakrishnan, N., Steer, E. D., Smith, E. F., Kudrynskyi, Z. R., Kovalyuk, Z. D., Eaves, L., …Beton, P. H. (2018). Epitaxial growth of γ-InSe and α, β, and γ-In2Se3 on ε-GaSe. 2D Materials, 5(3), https://doi.org/10.1088/2053-1583/aac479

We demonstrate that γ-InSe and the α, β and γ phases of In2Se3 can be grown epitaxially on ε-GaSe substrates using a physical vapour transport method. By exploiting the temperature gradient within the tube furnace, we can grow selectively different p... Read More about Epitaxial growth of γ-InSe and α, β, and γ-In2Se3 on ε-GaSe.

High-temperature molecular beam epitaxy of hexagonal boron nitride layers (2018)
Journal Article
Cheng, T. S., Summerfield, A., Mellor, C. J., Davies, A., Khlobystov, A. N., Eaves, L., …Novikov, S. V. (in press). High-temperature molecular beam epitaxy of hexagonal boron nitride layers. Journal of Vacuum Science and Technology B, 36(2), https://doi.org/10.1116/1.5011280

The growth and properties of hexagonal boron nitride (hBN) have recently attracted much attention due to applications in graphene-based monolayer thick 2D-structures and at the same time as a wide band gap material for deep-ultraviolet device (DUV) a... Read More about High-temperature molecular beam epitaxy of hexagonal boron nitride layers.

Lattice-matched epitaxial graphene grown on boron nitride (2017)
Journal Article
Davies, A., Albar, J., Summerfield, A., Thomas, J. C., Cheng, T. S., Korolkov, V. V., …Beton, P. H. (2018). Lattice-matched epitaxial graphene grown on boron nitride. Nano Letters, 18(1), https://doi.org/10.1021/acs.nanolett.7b04453

Lattice-matched graphene on hexagonal boron nitride is expected to lead to the formation of a band-gap but requires the formation of highly strained material and has not hitherto been realised. We demonstrate that aligned, lattice-matched graphene ca... Read More about Lattice-matched epitaxial graphene grown on boron nitride.

A giant quantum Hall plateau in graphene coupled to an InSe van der Waals crystal (2017)
Journal Article
Kudrynskyi, Z. R., Bhuiyan, M. A., Makarovsky, O., Greener, J. D., Vdovin, E. E., Kovalyuk, Z. D., …Patanè, A. (2017). A giant quantum Hall plateau in graphene coupled to an InSe van der Waals crystal. Physical Review Letters, 119(15), https://doi.org/10.1103/PhysRevLett.119.157701

We report on a “giant” quantum Hall effect plateau in a graphene-based field effect transistor where graphene is capped by a layer of the van der Waals crystal InSe. The “giant” quantum Hall effect plateau arises from the close alignment of the condu... Read More about A giant quantum Hall plateau in graphene coupled to an InSe van der Waals crystal.

An atomic carbon source for high temperature molecular beam epitaxy of graphene (2017)
Journal Article
Albar, J., Summerfield, A., Cheng, T. S., Davies, A., Smith, E., Khlobystov, A. N., …Novikov, S. V. (in press). An atomic carbon source for high temperature molecular beam epitaxy of graphene. Scientific Reports, 7(1), https://doi.org/10.1038/s41598-017-07021-1

We report the use of a novel atomic carbon source for the molecular beam epitaxy (MBE) of graphene layers on hBN flakes and on sapphire wafers at substrate growth temperatures of ~1400 °C. The source produces a flux of predominantly atomic carbon, wh... Read More about An atomic carbon source for high temperature molecular beam epitaxy of graphene.

High-temperature quantum oscillations caused by recurring Bloch states in graphene superlattices (2017)
Journal Article
Krishna Kumar, R., Chen, X., Auton, G., Mishchenko, A., Bandurin, D. A., Morozov, S., …Geim, A. (2017). High-temperature quantum oscillations caused by recurring Bloch states in graphene superlattices. Science, 357(6347), doi:10.1126/science.aal3357

Cyclotron motion of charge carriers in metals and semiconductors leads to Landau quantization and magneto-oscillatory behavior in their properties. Cryogenic temperatures are usually required to observe these oscillations. We show that graphene super... Read More about High-temperature quantum oscillations caused by recurring Bloch states in graphene superlattices.

Enhancing optoelectronic properties of SiC-grown graphene by a surface layer of colloidal quantum dots (2017)
Journal Article
Makarovsky, O., Turyanska, L., Mori, N., Greenaway, M., Eaves, L., Patanè, A., …Yakimova, R. (in press). Enhancing optoelectronic properties of SiC-grown graphene by a surface layer of colloidal quantum dots. 2D Materials, 4(3), https://doi.org/10.1088/2053-1583/aa76bb

We report a simultaneous increase of carrier concentration, mobility and photoresponsivity when SiC-grown graphene is decorated with a surface layer of colloidal PbS quantum dots, which act as electron donors. The charge on the ionised dots is spatia... Read More about Enhancing optoelectronic properties of SiC-grown graphene by a surface layer of colloidal quantum dots.


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