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Lattice-matched epitaxial graphene grown on boron nitride (2017)
Journal Article
Davies, A., Albar, J., Summerfield, A., Thomas, J. C., Cheng, T. S., Korolkov, V. V., …Beton, P. H. (2018). Lattice-matched epitaxial graphene grown on boron nitride. Nano Letters, 18(1), https://doi.org/10.1021/acs.nanolett.7b04453

Lattice-matched graphene on hexagonal boron nitride is expected to lead to the formation of a band-gap but requires the formation of highly strained material and has not hitherto been realised. We demonstrate that aligned, lattice-matched graphene ca... Read More about Lattice-matched epitaxial graphene grown on boron nitride.

A giant quantum Hall plateau in graphene coupled to an InSe van der Waals crystal (2017)
Journal Article
Kudrynskyi, Z. R., Bhuiyan, M. A., Makarovsky, O., Greener, J. D., Vdovin, E. E., Kovalyuk, Z. D., …Patanè, A. (2017). A giant quantum Hall plateau in graphene coupled to an InSe van der Waals crystal. Physical Review Letters, 119(15), https://doi.org/10.1103/PhysRevLett.119.157701

We report on a “giant” quantum Hall effect plateau in a graphene-based field effect transistor where graphene is capped by a layer of the van der Waals crystal InSe. The “giant” quantum Hall effect plateau arises from the close alignment of the condu... Read More about A giant quantum Hall plateau in graphene coupled to an InSe van der Waals crystal.

An atomic carbon source for high temperature molecular beam epitaxy of graphene (2017)
Journal Article
Albar, J., Summerfield, A., Cheng, T. S., Davies, A., Smith, E., Khlobystov, A. N., …Novikov, S. V. (in press). An atomic carbon source for high temperature molecular beam epitaxy of graphene. Scientific Reports, 7(1), https://doi.org/10.1038/s41598-017-07021-1

We report the use of a novel atomic carbon source for the molecular beam epitaxy (MBE) of graphene layers on hBN flakes and on sapphire wafers at substrate growth temperatures of ~1400 °C. The source produces a flux of predominantly atomic carbon, wh... Read More about An atomic carbon source for high temperature molecular beam epitaxy of graphene.

High-temperature quantum oscillations caused by recurring Bloch states in graphene superlattices (2017)
Journal Article
Krishna Kumar, R., Chen, X., Auton, G., Mishchenko, A., Bandurin, D. A., Morozov, S., …Geim, A. (2017). High-temperature quantum oscillations caused by recurring Bloch states in graphene superlattices. Science, 357(6347), doi:10.1126/science.aal3357

Cyclotron motion of charge carriers in metals and semiconductors leads to Landau quantization and magneto-oscillatory behavior in their properties. Cryogenic temperatures are usually required to observe these oscillations. We show that graphene super... Read More about High-temperature quantum oscillations caused by recurring Bloch states in graphene superlattices.

Enhancing optoelectronic properties of SiC-grown graphene by a surface layer of colloidal quantum dots (2017)
Journal Article
Makarovsky, O., Turyanska, L., Mori, N., Greenaway, M., Eaves, L., Patanè, A., …Yakimova, R. (in press). Enhancing optoelectronic properties of SiC-grown graphene by a surface layer of colloidal quantum dots. 2D Materials, 4(3), https://doi.org/10.1088/2053-1583/aa76bb

We report a simultaneous increase of carrier concentration, mobility and photoresponsivity when SiC-grown graphene is decorated with a surface layer of colloidal PbS quantum dots, which act as electron donors. The charge on the ionised dots is spatia... Read More about Enhancing optoelectronic properties of SiC-grown graphene by a surface layer of colloidal quantum dots.

Fast, multicolor photodetection with graphene-contacted p-GaSe/n-InSe van der Waals heterostructures (2017)
Journal Article
Yan, F., Zhao, L., Patanè, A., Hu, P., Wei, X., Luo, W., …Wang, K. (2017). Fast, multicolor photodetection with graphene-contacted p-GaSe/n-InSe van der Waals heterostructures. Nanotechnology, 28(27), https://doi.org/10.1088/1361-6528/aa749e

The integration of different two-dimensional materials within a multilayer van der Waals (vdW) heterostructure offers a promising technology for high performance opto-electronic devices such as photodetectors and light sources. Here we report on the... Read More about Fast, multicolor photodetection with graphene-contacted p-GaSe/n-InSe van der Waals heterostructures.

Engineering p-n junctions and bandgap tuning of InSe nanolayers by controlled oxidation (2017)
Journal Article
Balakrishnan, N., Kudrynskyi, Z. R., Smith, E. F., Fay, M. W., Makarovsky, O., Kovalyuk, Z. D., …Patanè, A. (2017). Engineering p-n junctions and bandgap tuning of InSe nanolayers by controlled oxidation. 2D Materials, 4(2), https://doi.org/10.1088/2053-1583/aa61e0

Exploitation of two-dimensional (2D) van der Waals (vdW) crystals can be hindered by the deterioration of the crystal surface over time due to oxidation. On the other hand, the existence of a stable oxide at room temperature can offer prospects for s... Read More about Engineering p-n junctions and bandgap tuning of InSe nanolayers by controlled oxidation.

Mobility enhancement of CVD graphene by spatially correlated charges (2017)
Journal Article
Turyanska, L., Makarovsky, O., Eaves, L., Patanè, A., & Mori, N. (2017). Mobility enhancement of CVD graphene by spatially correlated charges. 2D Materials, 4(2), https://doi.org/10.1088/2053-1583/aa55b4

The manuscript presents a strategy for enhancing the carrier mobility of single layer CVD graphene (CVD SLG) based on spatially correlated charges. Our Monte Carlo simulations, numerical modeling and the experimental results confirm that spatial corr... Read More about Mobility enhancement of CVD graphene by spatially correlated charges.


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