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The direct-to-indirect band gap crossover in two-dimensional van der Waals Indium Selenide crystals (2016)
Journal Article
Mudd, G., Molas, M., Chen, X., Zólyomi, V., Nogajewski, K., Kudrynskyi, Z. R., …Patanè, A. (2016). The direct-to-indirect band gap crossover in two-dimensional van der Waals Indium Selenide crystals. Scientific Reports, 6(1), https://doi.org/10.1038/srep39619

The electronic band structure of van der Waals (vdW) layered crystals has properties that depend on the composition, thickness and stacking of the component layers. Here we use density functional theory and high field magneto-optics to investigate th... Read More about The direct-to-indirect band gap crossover in two-dimensional van der Waals Indium Selenide crystals.

High electron mobility, quantum Hall effect and anomalous optical response in atomically thin InSe (2016)
Journal Article
Bandurin, D. A., Tyurnina, A. V., Yu, G. L., Mishchenko, A., Zólyomi, V., Morozov, S. V., …Cao, Y. (in press). High electron mobility, quantum Hall effect and anomalous optical response in atomically thin InSe. Nature Nanotechnology, doi:10.1038/nnano.2016.242

A decade of intense research on two-dimensional (2D) atomic crystals has revealed that their properties can differ greatly from those of the parent compound. These differences are governed by changes in the band structure due to quantum confinement a... Read More about High electron mobility, quantum Hall effect and anomalous optical response in atomically thin InSe.

Hexagonal Boron Nitride Tunnel Barriers Grown on Graphite by High Temperature Molecular Beam Epitaxy (2016)
Journal Article
Cho, Y., Summerfield, A., Davies, A., Cheng, T. S., Smith, E. F., Mellor, C. J., …Novikov, S. V. (2016). Hexagonal Boron Nitride Tunnel Barriers Grown on Graphite by High Temperature Molecular Beam Epitaxy. Scientific Reports, 6(1), https://doi.org/10.1038/srep34474

We demonstrate direct epitaxial growth of high-quality hexagonal boron nitride (hBN) layers on graphite using high-temperature plasma-assisted molecular beam epitaxy. Atomic force microscopy reveals mono- and few-layer island growth, while conducting... Read More about Hexagonal Boron Nitride Tunnel Barriers Grown on Graphite by High Temperature Molecular Beam Epitaxy.

Resonant Zener tunnelling via zero-dimensional states in a narrow gap diode (2016)
Journal Article
Di Poala, D. M., Kesaria, M., Makarovsky, O., Velichko, A., Eaves, L., Mori, N., …Patanè, A. (in press). Resonant Zener tunnelling via zero-dimensional states in a narrow gap diode. Scientific Reports, 6, https://doi.org/10.1038/srep32039

Interband tunnelling of carriers through a forbidden energy gap, known as Zener tunnelling, is a phenomenon of fundamental and technological interest. Its experimental observation in the Esaki p-n semiconductor diode has led to the first demonstratio... Read More about Resonant Zener tunnelling via zero-dimensional states in a narrow gap diode.

Tuning the valley and chiral quantum state of Dirac electrons in van der Waals heterostructures (2016)
Journal Article
Wallbank, J. . R., Ghazaryan, D., Misra, A., Cao, Y., Tu, J. . S., Piot, B. A., …Mishchenko, A. (2016). Tuning the valley and chiral quantum state of Dirac electrons in van der Waals heterostructures. Science, 353(6299), 575-579. https://doi.org/10.1126/science.aaf4621

Chirality is a fundamental property of electrons with the relativistic spectrum found in graphene and topological insulators. It plays a crucial role in relativistic phenomena, such as Klein tunneling, but it is difficult to visualize directly. Here... Read More about Tuning the valley and chiral quantum state of Dirac electrons in van der Waals heterostructures.

Quantum confinement and photoresponsivity of β-In2Se3 nanosheets grown by physical vapour transport (2016)
Journal Article
Balakrishnan, N., Staddon, C. R., Smith, E. F., Stec, J., Gay, D., Mudd, G. W., …Beton, P. H. (in press). Quantum confinement and photoresponsivity of β-In2Se3 nanosheets grown by physical vapour transport. 2D Materials, 3(2), 1-8. https://doi.org/10.1088/2053-1583/3/2/025030

We demonstrate that β-In2Se3 layers with thickness ranging from 2.8 – 100 nm can be grown on SiO2/Si, mica and graphite using a physical vapour transport method. The β-In2Se3 layers are chemically stable at room temperature and exhibit a blue-shift o... Read More about Quantum confinement and photoresponsivity of β-In2Se3 nanosheets grown by physical vapour transport.

Phonon-Assisted Resonant Tunneling of Electrons in Graphene–Boron Nitride Transistors (2016)
Journal Article
Vdovin, E. E., Mishchenko, A., Greenaway, M., Zhu, M., Ghazaryan, D., Misra, A., …Eaves, L. (2016). Phonon-Assisted Resonant Tunneling of Electrons in Graphene–Boron Nitride Transistors. Physical Review Letters, 116(18), https://doi.org/10.1103/PhysRevLett.116.186603

We observe a series of sharp resonant features in the differential conductance of graphene-hexagonal boron nitride-graphene tunnel transistors over a wide range of bias voltages between 10 and 200 mV. We attribute them to electron tunneling assisted... Read More about Phonon-Assisted Resonant Tunneling of Electrons in Graphene–Boron Nitride Transistors.

Strain-Engineered Graphene Grown on Hexagonal Boron Nitride by Molecular Beam Epitaxy (2016)
Journal Article
Summerfield, A., Davies, A., Cheng, T. S., Korolkov, V. V., Cho, Y., Mellor, C. J., …Beton, P. H. (2016). Strain-Engineered Graphene Grown on Hexagonal Boron Nitride by Molecular Beam Epitaxy. Scientific Reports, 6(1), https://doi.org/10.1038/srep22440

Graphene grown by high temperature molecular beam epitaxy on hexagonal boron nitride (hBN) forms continuous domains with dimensions of order 20 μm, and exhibits moiré patterns with large periodicities, up to ~30 nm, indicating that the layers are hig... Read More about Strain-Engineered Graphene Grown on Hexagonal Boron Nitride by Molecular Beam Epitaxy.

High temperature MBE of graphene on sapphire and hexagonal boron nitride flakes on sapphire (2016)
Journal Article
Cheng, T. S., Davies, A., Summerfield, A., Cho, Y., Cebula, I., Hill, R. J., …Novikov, S. V. (2016). High temperature MBE of graphene on sapphire and hexagonal boron nitride flakes on sapphire. Journal of Vacuum Science and Technology B, 34(2), 02L101. https://doi.org/10.1116/1.4938157

The discovery of graphene and its remarkable electronic properties has provided scientists with a revolutionary material system for electronics and optoelectronics. Here, the authors investigate molecular beam epitaxy (MBE) as a growth method for gra... Read More about High temperature MBE of graphene on sapphire and hexagonal boron nitride flakes on sapphire.


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