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Resonant tunnelling between the chiral Landau states of twisted graphene lattices (2015)
Journal Article
Greenaway, M., Vdovin, E. E., Mishchenko, A., Makarovsky, O., Patanè, A., Wallbank, J., …Eaves, L. (2015). Resonant tunnelling between the chiral Landau states of twisted graphene lattices. Nature Physics, 11(12), 1057-1062. https://doi.org/10.1038/nphys3507

A class of multilayered functional materials has recently emerged in which the component atomic layers are held together by weak van der Waals forces that preserve the structural integrity and physical properties of each layer. An exemplar of such a... Read More about Resonant tunnelling between the chiral Landau states of twisted graphene lattices.

Monte Carlo study on anomalous carrier diffusion in inhomogeneous semiconductors (2015)
Journal Article
Mori, N., Hill, R., Patanè, A., & Eaves, L. (2015). Monte Carlo study on anomalous carrier diffusion in inhomogeneous semiconductors. Journal of Physics: Conference Series, 647, Article 012059. https://doi.org/10.1088/1742-6596/647/1/012059

We perform ensemble Monte Carlo simulations of electron diffusion in high mobility inhomogeneous InAs layers. Electrons move ballistically for short times while moving diffusively for sufficiently long times. We find that electrons show anomalous dif... Read More about Monte Carlo study on anomalous carrier diffusion in inhomogeneous semiconductors.

Graphene-hexagonal boron nitride resonant tunneling diodes as high-frequency oscillators (2015)
Journal Article
Gaskell, J., Eaves, L., Novoselov, K., Mishchenko, A., Geim, A., Fromhold, T., & Greenaway, M. (2015). Graphene-hexagonal boron nitride resonant tunneling diodes as high-frequency oscillators. Applied Physics Letters, 107(10), Article 103105. https://doi.org/10.1063/1.4930230

We assess the potential of two-terminal graphene-hexagonal boron nitride-graphene resonant tunneling diodes as high-frequency oscillators, using self-consistent quantum transport and electrostatic simulations to determine the time-dependent response... Read More about Graphene-hexagonal boron nitride resonant tunneling diodes as high-frequency oscillators.

High Broad-Band Photoresponsivity of Mechanically Formed InSe-Graphene van der Waals Heterostructures (2015)
Journal Article
Mudd, G. W., Svatek, S. A., Hague, L., Makarovsky, O., Kudrynskyi, Z. R., Mellor, C. J., …Patanè, A. (2015). High Broad-Band Photoresponsivity of Mechanically Formed InSe-Graphene van der Waals Heterostructures. Advanced Materials, 27(25), 3760-3766. https://doi.org/10.1002/adma.201500889

We exploit the broad-band transparency of graphene and the favorable band line up of graphene with van der Waals InSe crystals to create new functional heterostructures and high-performance photodetectors. The InSe-graphene heterostructure exhibits a... Read More about High Broad-Band Photoresponsivity of Mechanically Formed InSe-Graphene van der Waals Heterostructures.

Ligand-Induced Control of Photoconductive Gain and Doping in a Hybrid Graphene–Quantum Dot Transistor (2015)
Journal Article
Turyanska, L., Makarovsky, O., Svatek, S. A., Beton, P. H., Mellor, C. J., Patanè, A., …Wilson, N. R. (2015). Ligand-Induced Control of Photoconductive Gain and Doping in a Hybrid Graphene–Quantum Dot Transistor. Advanced Electronic Materials, 1(7), 1500062. https://doi.org/10.1002/aelm.201500062

In graphene devices decorated with a layer of near-infrared colloidal PbS quantum dots (QDs), the choice of the QD capping ligands and the integrity of the QD layer have a strong influence on the doping, carrier mobility, and photoresponse. By using... Read More about Ligand-Induced Control of Photoconductive Gain and Doping in a Hybrid Graphene–Quantum Dot Transistor.