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Universal mobility characteristics of graphene originating from charge scattering by ionised impurities (2021)
Journal Article
Gosling, J. H., Makarovsky, O., Wang, F., Cottam, N. D., Greenaway, M. T., Patanè, A., …Fromhold, T. M. (2021). Universal mobility characteristics of graphene originating from charge scattering by ionised impurities. Communications Physics, 4(1), Article 30. https://doi.org/10.1038/s42005-021-00518-2

Pristine graphene and graphene-based heterostructures can exhibit exceptionally high electron mobility if their surface contains few electron-scattering impurities. Mobility directly influences electrical conductivity and its dependence on the carrie... Read More about Universal mobility characteristics of graphene originating from charge scattering by ionised impurities.

High Responsivity and Wavelength Selectivity of GaN?Based Resonant Cavity Photodiodes (2020)
Journal Article
Li, J., Yang, C., Liu, L., Cao, H., Lin, S., Xi, X., …Zhao, L. (2020). High Responsivity and Wavelength Selectivity of GaN‐Based Resonant Cavity Photodiodes. Advanced Optical Materials, 8(7), Article 1901276. https://doi.org/10.1002/adom.201901276

The implementation of blue-light photodiodes based on InGaN in emerging technologies, such as free-space visible light communication (VLC), requires transformative approaches towards enhanced performance, miniaturization, and integration beyond curre... Read More about High Responsivity and Wavelength Selectivity of GaN?Based Resonant Cavity Photodiodes.

High-Frequency Elastic Coupling at the Interface of van der Waals Nanolayers Imaged by Picosecond Ultrasonics (2019)
Journal Article
Greener, J. D., de Lima Savi, E., Akimov, A. V., Raetz, S., Kudrynskyi, Z., Kovalyuk, Z. D., …Gusev, V. E. (2019). High-Frequency Elastic Coupling at the Interface of van der Waals Nanolayers Imaged by Picosecond Ultrasonics. ACS Nano, 13(10), 11530-11537. https://doi.org/10.1021/acsnano.9b05052

Although the topography of van de Waals (vdW) layers and heterostructures can be imaged by scanning probe microscopy, high-frequency interface elastic properties are more difficult to assess. These can influence the stability, reliability and perform... Read More about High-Frequency Elastic Coupling at the Interface of van der Waals Nanolayers Imaged by Picosecond Ultrasonics.

Formation and healing of defects in atomically thin GaSe and InSe (2019)
Journal Article
Hopkinson, D. G., Zólyomi, V., Rooney, A. P., Clark, N., Terry, D. J., Hamer, M., …Haigh, S. J. (2019). Formation and healing of defects in atomically thin GaSe and InSe. ACS Nano, 13(5), 5112-5123. https://doi.org/10.1021/acsnano.8b08253

© 2019 American Chemical Society. Two dimensional III-VI metal monochalcogenide materials, such as GaSe and InSe, are attracting considerable attention due to their promising electronic and optoelectronic properties. Here, an investigation of point a... Read More about Formation and healing of defects in atomically thin GaSe and InSe.

Mid-IR plasmonic compound with gallium oxide toplayer formed by GaSb oxidation in water (2018)
Journal Article
Bomers, M., Di Paola, D. M., Cerutti, L., Michel, T., Arinero, R., Tournié, E., …Taliercio, T. (2018). Mid-IR plasmonic compound with gallium oxide toplayer formed by GaSb oxidation in water. Semiconductor Science and Technology, 33(9), Article 095009. https://doi.org/10.1088/1361-6641/aad4bf

The oxidation of GaSb in aqueous environments has gained interest by the advent of plasmonic antimonide-based compound semiconductors for molecular sensing applications. This work focuses on quantifying the GaSb–water reaction kinetics by studying a... Read More about Mid-IR plasmonic compound with gallium oxide toplayer formed by GaSb oxidation in water.