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Thermal design optimization of novel modular power converter assembly enabling higher performance, reliability and availability (2016)
Journal Article
Cova, P., Delmonte, N., Solomon, A., & Castellazzi, A. (2016). Thermal design optimization of novel modular power converter assembly enabling higher performance, reliability and availability. Microelectronics Reliability, 64, https://doi.org/10.1016/j.microrel.2016.07.019

An alternative integration scheme for a half-bridge switch using 70 ?m thin Si IGBTs and diodes is presented. This flat switch, which is designed for high-frequency application with high power density, exhibits high strength, high toughness, low para... Read More about Thermal design optimization of novel modular power converter assembly enabling higher performance, reliability and availability.

Development and characterisation of pressed packaging solutions for high-temperature high-reliability SiC power modules (2016)
Journal Article
Ortiz Gonzalez, J., Aliyu, A. M., Alatise, O., Castellazzi, A., Ran, L., & Mawby, P. (2016). Development and characterisation of pressed packaging solutions for high-temperature high-reliability SiC power modules. Microelectronics Reliability, 64, 434-439. https://doi.org/10.1016/j.microrel.2016.07.062

SiC is a wide bandgap semiconductor with better electrothermal properties than silicon, including higher temperature of operation, higher breakdown voltage, lower losses and the ability to switch at higher frequencies. However, the power cycling perf... Read More about Development and characterisation of pressed packaging solutions for high-temperature high-reliability SiC power modules.

Body diode reliability investigation of SiC power MOSFETs (2016)
Journal Article
Fayyaz, A., Romano, G., & Castellazzi, A. (2016). Body diode reliability investigation of SiC power MOSFETs. Microelectronics Reliability, 64, 530-534. https://doi.org/10.1016/j.microrel.2016.07.044

A special feature of vertical power MOSFETs, in general, is the inbuilt body diode which could eliminate the need of having to use additional anti-parallel diodes for current freewheeling in industrial inverter applications: this, clearly, subject to... Read More about Body diode reliability investigation of SiC power MOSFETs.

Modular plug-in high-performance assembly of a power converter (2016)
Conference Proceeding
Solomon, A. K., Castellazzi, A., Delmonte, N., & Cova, P. (2016). Modular plug-in high-performance assembly of a power converter.

This paper presents the work on an alternative integration scheme for a half-bridge switch using 70 ?m thin Si IGBTs and diodes addressing higher strength, higher toughness and higher thermal conductivity. The switch is totally bond wireless, since b... Read More about Modular plug-in high-performance assembly of a power converter.

A survey on configurations of current-limiting circuit breakers (CL-CB) (2016)
Conference Proceeding
Gu, C., Wheeler, P., Castellazzi, A., Watson, A. J., & Effah, F. B. (2016). A survey on configurations of current-limiting circuit breakers (CL-CB).

This paper presents a survey of topology configurations of current-limiting circuit breakers. Twelve different current-limiting topologies within four categories are detailed discussed and compared. It is concluded that active CL-CB may be a good cho... Read More about A survey on configurations of current-limiting circuit breakers (CL-CB).

Silicon carbide MOSFETs in more electric aircraft power converters: the performance and reliability benefits over silicon IGBTs for a specified flight mission profile (2016)
Conference Proceeding
O'Donnell, S., Debauche, J., Wheeler, P., & Castellazzi, A. (2016). Silicon carbide MOSFETs in more electric aircraft power converters: the performance and reliability benefits over silicon IGBTs for a specified flight mission profile.

This paper describes the design, construction and performance of a 5 kVA aviation power module containing silicon carbide MOSFETs. The function and control of this module within a commercial aviation power electrical control unit (ECU) application is... Read More about Silicon carbide MOSFETs in more electric aircraft power converters: the performance and reliability benefits over silicon IGBTs for a specified flight mission profile.

Technologies, feasibility, and management strategies for on-board multi-source energy networks (2016)
Conference Proceeding
Ahmed, S., Castellazzi, A., & Williams, A. (in press). Technologies, feasibility, and management strategies for on-board multi-source energy networks.

The paper discusses the feasibility of installing renewable energy generation technologies on sea-going transport, taking into account the additional weight and power consumption. This study in based on the power management of a 26,198 tonne commerci... Read More about Technologies, feasibility, and management strategies for on-board multi-source energy networks.

Influence of design parameters on the short-circuit ruggedness of SiC Power MOSFETs (2016)
Conference Proceeding
Romano, G., Riccio, M., Maresca, L., Fayyaz, A., & Castellazzi, A. (in press). Influence of design parameters on the short-circuit ruggedness of SiC Power MOSFETs.

This work aims to present an investigation on short-circuit (SC) failure behaviour of SiC Power MOSFETs due to the onset of thermal runaway. As inferable from experimental outcomes, it is related to the formation of hotspot, whose exact location is m... Read More about Influence of design parameters on the short-circuit ruggedness of SiC Power MOSFETs.

Reliability-driven assessment of GaN HEMTs and Si IGBTs in 3L-ANPC PV inverters (2016)
Journal Article
Gurpinar, E., Yang, Y., Iannuzzo, F., Castellazzi, A., & Blaabjerg, F. (2016). Reliability-driven assessment of GaN HEMTs and Si IGBTs in 3L-ANPC PV inverters. IEEE Journal of Emerging and Selected Topics in Power Electronics, 4(3), 956-969. https://doi.org/10.1109/JESTPE.2016.2566259

In this paper, thermal loading of the state-of-the-art GaN HEMTs and traditional Si IGBTs in 3L-ANPC PV inverters is presented considering real-field long-term mission profiles (i.e., ambient temperature and solar irradiance). A comparison of Si IGBT... Read More about Reliability-driven assessment of GaN HEMTs and Si IGBTs in 3L-ANPC PV inverters.

A comprehensive study of the short-circuit ruggedness of silicon carbide power MOSFETs (2016)
Journal Article
Romano, G., Fayyaz, A., Riccio, M., Maresca, L., Breglio, G., Castellazzi, A., & Irace, A. (2016). A comprehensive study of the short-circuit ruggedness of silicon carbide power MOSFETs. IEEE Journal of Emerging and Selected Topics in Power Electronics, 4(3), 978-987. https://doi.org/10.1109/JESTPE.2016.2563220

The behavior of Silicon Carbide Power MOSFETs under stressful short circuit conditions is investigated in this paper. Illustration of two different short-circuit failure phenomena for Silicon Carbide Power MOSFETs are thoroughly reported. Experimenta... Read More about A comprehensive study of the short-circuit ruggedness of silicon carbide power MOSFETs.

Observer based dynamic adaptive cooling system for power modules (2016)
Journal Article
Wang, X., Castellazzi, A., & Zanchetta, P. (2016). Observer based dynamic adaptive cooling system for power modules. Microelectronics Reliability, 58, https://doi.org/10.1016/j.microrel.2016.01.020

This paper presents an advanced dynamic cooling strategy for multi-layer structured power electronic modules. An observer based feedback controller is proposed to reduce a power device or module's thermal cycle amplitude during operation, with the ai... Read More about Observer based dynamic adaptive cooling system for power modules.

SiC power MOSFETs performance, robustness and technology maturity (2016)
Journal Article
Castellazzi, A., Fayyaz, A., Romano, G., Yang, L., Riccio, M., & Irace, A. (2016). SiC power MOSFETs performance, robustness and technology maturity. Microelectronics Reliability, 58, https://doi.org/10.1016/j.microrel.2015.12.034

Relatively recently, SiC power MOSFETs have transitioned from being a research exercise to becoming an industrial reality. The potential benefits that can be drawn from this technology in the electrical energy conversion domain have been amply discus... Read More about SiC power MOSFETs performance, robustness and technology maturity.

Performance evaluation of a 3-level ANPC photovoltaic grid-connected inverter with 650V SiC devices and optimized PWM (2016)
Journal Article
Barater, D., Concari, C., Buticchi, G., Gurpinar, E., De, D., & Castellazzi, A. (2016). Performance evaluation of a 3-level ANPC photovoltaic grid-connected inverter with 650V SiC devices and optimized PWM. IEEE Transactions on Industry Applications, 52(2), 2475-2485. https://doi.org/10.1109/TIA.2016.2514344

Photovoltaic (PV) energy conversion has been on the spotlight of scientific research on renewable energy for several years. In recent years the bulk of the research on PV has focused on transformerless grid-connected inverters, more efficient than tr... Read More about Performance evaluation of a 3-level ANPC photovoltaic grid-connected inverter with 650V SiC devices and optimized PWM.

Low inductance 2.5kV packaging technology for SiC switches (2016)
Conference Proceeding
Mouawad, B., Li, J., Castellazzi, A., Johnson, C. M., Erlbacher, T., & Friedriches, P. (2016). Low inductance 2.5kV packaging technology for SiC switches.

The switching speed of power semiconductors has reached levels where conventional semiconductors packages limit the achievable performance due to relatively high parasitic inductance and capacitance. This paper presents a novel packaging structure wh... Read More about Low inductance 2.5kV packaging technology for SiC switches.

Modular integration of a matrix converter (2015)
Journal Article
Solomon, A. K., Skuriat, R., Castellazzi, A., & Wheeler, P. (2016). Modular integration of a matrix converter. IEEJ Transactions on Electrical and Electronic Engineering, 11(1), https://doi.org/10.1002/tee.22194

The future development of high-performance power electronics will rely increasingly on system-level integration, where semiconductor devices are co-packaged with other active and passive components (e.g., gate drivers, filter capacitors, and inductor... Read More about Modular integration of a matrix converter.

Single-phase T-Type inverter performance benchmark Using Si IGBTs, SiC MOSFETs, and GaN HEMTs (2015)
Journal Article
Gurpinar, E., & Castellazzi, A. (2015). Single-phase T-Type inverter performance benchmark Using Si IGBTs, SiC MOSFETs, and GaN HEMTs. IEEE Transactions on Power Electronics, 31(10), 7148-7160. https://doi.org/10.1109/TPEL.2015.2506400

In this paper, benchmark of Si IGBT, SiC MOSFET and GaN HEMT power switches at 600V class is conducted in single-phase T-type inverter. Gate driver requirements, switching performance, inverter efficiency performance, heat sink volume, output filter... Read More about Single-phase T-Type inverter performance benchmark Using Si IGBTs, SiC MOSFETs, and GaN HEMTs.

A physics-based compact model of SiC power MOSFETs (2015)
Journal Article
Kraus, R., & Castellazzi, A. (2016). A physics-based compact model of SiC power MOSFETs. IEEE Transactions on Power Electronics, 31(8), 5863-5870. https://doi.org/10.1109/TPEL.2015.2488106

The presented compact model of SiC power MOSFETs is based on a thorough consideration of the physical phenomena which are important for the device characteristics and its electrothermal behavior. The model includes descriptions of the dependence of c... Read More about A physics-based compact model of SiC power MOSFETs.

High temperature pulsed-gate robustness testing of SiC power MOSFETs (2015)
Journal Article
Fayyaz, A., & Castellazzi, A. (2015). High temperature pulsed-gate robustness testing of SiC power MOSFETs. Microelectronics Reliability, 55(9-10), 1724-1728. https://doi.org/10.1016/j.microrel.2015.06.141

© 2015 Elsevier Ltd. Silicon Carbide (SiC) gate oxide reliability still remains a crucial issue and is amongst the important consideration factors when it comes to the implementation of SiC MOS-based devices within industrial power electronic applica... Read More about High temperature pulsed-gate robustness testing of SiC power MOSFETs.

Design Tools for Rapid Multidomain Virtual Prototyping of Power Electronic Systems (2015)
Journal Article
Evans, P. L., Castellazzi, A., & Johnson, C. M. (2016). Design Tools for Rapid Multidomain Virtual Prototyping of Power Electronic Systems. IEEE Transactions on Power Electronics, 31(3), 2443-2455. https://doi.org/10.1109/TPEL.2015.2437793

The need for multidisciplinary virtual prototyping in power electronics has been well established, however, design tools capable of facilitating a rapid iterative virtual design process do not exist. A key challenge in developing such tools is identi... Read More about Design Tools for Rapid Multidomain Virtual Prototyping of Power Electronic Systems.

Single pulse avalanche robustness and repetitive stress ageing of SiC power MOSFETs (2014)
Journal Article
Fayyaz, A., Yang, L., Riccio, M., Castellazzi, A., & Irace, A. (2014). Single pulse avalanche robustness and repetitive stress ageing of SiC power MOSFETs. Microelectronics Reliability, 54(9-10), 2185-2190. https://doi.org/10.1016/j.microrel.2014.07.078

This paper presents an extensive electro-thermal characterisation of latest generation silicon carbide (SiC) Power MOSFETs under unclamped inductive switching (UIS) conditions. Tests are carried out to thoroughly understand the single pulse avalanche... Read More about Single pulse avalanche robustness and repetitive stress ageing of SiC power MOSFETs.