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Simulations and Measurement Analysis of SiC MOSFET and IGBT Gate Drive Performance in Power Modules for More Electric Aircraft Motor Drive Applications (2019)
Conference Proceeding
O'Donnell, S., Chan, A., Wheeler, P., & Castellazzi, A. (2019). Simulations and Measurement Analysis of SiC MOSFET and IGBT Gate Drive Performance in Power Modules for More Electric Aircraft Motor Drive Applications. https://doi.org/10.23919/EPE.2019.8914898

With the increase in power electronic solutions for More Electric Aircraft, silicon-carbide MOSFETs are being considered as alternatives to silicon IGBTs in areas such as motor drive systems for primary flight and landing gear actuators. In these hig... Read More about Simulations and Measurement Analysis of SiC MOSFET and IGBT Gate Drive Performance in Power Modules for More Electric Aircraft Motor Drive Applications.

SiC power MOSFETs Threshold-voltage hysteresis and its impact on Short Circuit operation (2019)
Conference Proceeding
Asllani, B., Morel, H., Planson, D., Fayyaz, A., & Castellazzi, A. (2019). SiC power MOSFETs Threshold-voltage hysteresis and its impact on Short Circuit operation. . https://doi.org/10.1109/ESARS-ITEC.2018.8607547

V TH subthreshold hysteresis is an aspect of MOSFET's threshold instabilities that is gaining interests in last few years. As a matter of fact, reliability concerns are raised due to the fluctuation of the threshold voltage depending on the previous... Read More about SiC power MOSFETs Threshold-voltage hysteresis and its impact on Short Circuit operation.

SiC-based Triple Active Bridge Converter for Shipboard Micro-grid Applications with Efficient Energy Storage (2018)
Conference Proceeding
Wang, Z., & Castellazzi, A. (2018). SiC-based Triple Active Bridge Converter for Shipboard Micro-grid Applications with Efficient Energy Storage. https://doi.org/10.1109/ISGWCP.2018.8634456

Silicon Carbide (SiC) MOSFET power module has became commercially available in the past few years, and it is attractive in dual/triple active bridge converters to replace conventional Si-IGBTs. The capability to connect with the energy storage system... Read More about SiC-based Triple Active Bridge Converter for Shipboard Micro-grid Applications with Efficient Energy Storage.

Comprehensive design optimization of a wind power converter using SiC technology (2018)
Conference Proceeding
Hussein, A., & Castellazzi, A. (2018). Comprehensive design optimization of a wind power converter using SiC technology. In 2018 International Conference on Smart Grid (icSmartGrid). https://doi.org/10.1109/ISGWCP.2018.8634431

This paper proposes the joint electro-magnetic and electro-thermal design optimization of a three-phase two-level voltage-source inverter, referring to the specific operational conditions of wind power conversion applications. The reference power lev... Read More about Comprehensive design optimization of a wind power converter using SiC technology.

Reliability Analysis of SiC MOSFET Power Module for More Electric Aircraft Motor Drive Applications (2018)
Conference Proceeding
O'Donnell, S., Wheeler, P., & Castellazzi, A. (2018). Reliability Analysis of SiC MOSFET Power Module for More Electric Aircraft Motor Drive Applications. In 2018 IEEE International Conference on Electrical Systems for Aircraft, Railway, Ship Propulsion and Road Vehicles & International Transportation Electrification Conference (ESARS-ITEC) (1-4). https://doi.org/10.1109/esars-itec.2018.8607615

This paper presents a reliability study on a Microsemi 5 kVA Integrated Power Solutions (IPS) module designed to drive an electrical motor in a More Electric Aircraft actuation system. The measures taken in the design of the product and the reliabili... Read More about Reliability Analysis of SiC MOSFET Power Module for More Electric Aircraft Motor Drive Applications.

Effect of Parameters Variability on the Performance of SiC MOSFET Modules (2018)
Conference Proceeding
Borghese, A., Riccio, M., Breglio, G., Fayyaz, A., Castellazzi, A., Irace, A., & Marese, L. (2018). Effect of Parameters Variability on the Performance of SiC MOSFET Modules. In Proceedings on 2018 IEEE International Conference on Electrical Systems for Aircraft, Railway, Ship Propulsion and Road Vehicles & International Transportation Electrification Conference (ESARS-ITEC) (1-5). https://doi.org/10.1109/ESARS-ITEC.2018.8607593

This paper introduces a statistical analysis of the impact of devices parameters dispersion on the performances of parallel connected SiC MOSFETs. To this purpose, the statistical fluctuations of threshold voltage and current factor are evaluated on... Read More about Effect of Parameters Variability on the Performance of SiC MOSFET Modules.

Variable frequency control and filter design for optimum energy extraction from a SiC wind inverter (2018)
Conference Proceeding
Hussein, A., & Castellazzi, A. (2018). Variable frequency control and filter design for optimum energy extraction from a SiC wind inverter. In 2018 International Power Electronics Conference (IPEC-Niigata 2018 -ECCE Asia) (2932-2937). https://doi.org/10.23919/IPEC.2018.8507493

This paper proposes the optimised control and filter design of a 12 kW 3-phase 2-level wind inverter specifically taking into account the intermittent nature of the input power. In particular, the applied control scheme aims at optimising the low-loa... Read More about Variable frequency control and filter design for optimum energy extraction from a SiC wind inverter.

Avalanche ruggedness of parallel SiC power MOSFETs (2018)
Journal Article
Fayyaz, A., Asllani, B., Castellazzi, A., Riccio, M., & Irace, A. (2018). Avalanche ruggedness of parallel SiC power MOSFETs. Microelectronics Reliability, 88-90, 666-670. https://doi.org/10.1016/j.microrel.2018.06.038

© 2018 Elsevier Ltd The aim of this paper is to investigate the impact of electro-thermal device parameter spread on the avalanche ruggedness of parallel silicon carbide (SiC) power MOSFETs representative of multi-chip layout within an integrated pow... Read More about Avalanche ruggedness of parallel SiC power MOSFETs.

VTH subthreshold hysteresis technology and temperature dependence in commercial 4H-SiC MOSFETs (2018)
Journal Article
Asllani, B., Fayyaz, A., Castellazzi, A., Morel, H., & Planson, D. (2018). VTH subthreshold hysteresis technology and temperature dependence in commercial 4H-SiC MOSFETs. Microelectronics Reliability, 88-90, 604-609. https://doi.org/10.1016/j.microrel.2018.06.047

VTH subthreshold hysteresis measured in commercially available 4H-SiC MOSFET is more pronounced in trench than in planar ones. All planar devices from different manufacturers exhibit an inverse temperature dependence, with the hysteresis amplitude re... Read More about VTH subthreshold hysteresis technology and temperature dependence in commercial 4H-SiC MOSFETs.

Analysis of device and circuit parameters variability in SiC MOSFETs-based multichip power module (2018)
Conference Proceeding
Riccio, M., Borghese, A., Romano, G., D 'alessandro, V., Fayyaz, A., Castellazzi, A., …Irace, A. (2018). Analysis of device and circuit parameters variability in SiC MOSFETs-based multichip power module. In Power Electronics and Applications (EPE'18 ECCE Europe), 2018 20th European Conference

In this contribution, a previously developed temperature-dependent SPICE model for SiC power MOSFETs is calibrated on experimental data of commercially available devices. Thereafter, its features are exploited for dynamic ET simulations of paralleled... Read More about Analysis of device and circuit parameters variability in SiC MOSFETs-based multichip power module.

Device-package interaction and gate driver layout analysis in SiC MOSFET power modules for more electric aircraft motor drive applications (2018)
Conference Proceeding
O'Donnell, S., Egan, L., Walsh, V., Wheeler, P., & Castellazzi, A. (2018). Device-package interaction and gate driver layout analysis in SiC MOSFET power modules for more electric aircraft motor drive applications. In EPE'18 ECCE Europe - 20th European Conference on Power Electronics and Applications

This paper presents measurements and comparison analysis of 1200 V SiC MOSFET gate drive signals in two different integrated power solutions designed for More Electric Aircraft motor drive applications. The modules are designed to accommodate a 540 V... Read More about Device-package interaction and gate driver layout analysis in SiC MOSFET power modules for more electric aircraft motor drive applications.

GaN transistors efficient cooling by graphene foam (2018)
Journal Article
Antonini, M., Cova, P., Delmonte, N., & Castellazzi, A. (2018). GaN transistors efficient cooling by graphene foam. Microelectronics Reliability, 88-90, 812-816. https://doi.org/10.1016/j.microrel.2018.07.004

© 2018 Elsevier Ltd Graphene conductive foams have shown very high potential as cooling material in electronic systems. Its exploitation with discrete GaN transistors is demonstrated in this paper. A proper experimental setup is developed to extract... Read More about GaN transistors efficient cooling by graphene foam.

Experimentally validated methodology for real-time temperature cycle tracking in SiC power modules (2018)
Journal Article
Stella, F., Olanrewaju, O., Yang, Z., Castellazzi, A., & Pellegrino, G. (2018). Experimentally validated methodology for real-time temperature cycle tracking in SiC power modules. Microelectronics Reliability, 88-90, 615-619. https://doi.org/10.1016/j.microrel.2018.07.072

© 2018 Elsevier Ltd The ability to monitor temperature variations during the actual operation of power modules is key to reliability investigations and the development of lifetime prediction strategies. This paper proposes an original solution, speci... Read More about Experimentally validated methodology for real-time temperature cycle tracking in SiC power modules.

Parametric study of optimum gate-resistance for performance and short-circuit robustness of novel half-bridge IGBT modules (2018)
Conference Proceeding
Cheraghinezhad, A., Hussein, A., Castellazzi, A., & Saito, K. (in press). Parametric study of optimum gate-resistance for performance and short-circuit robustness of novel half-bridge IGBT modules

This paper jointly investigates the switching performance and the short-circuit (S.C) turn off behavior of a novel half-bridge (2in1) IGBT power module concept with the low stray inductance (L?), which has been available in the market since 2015. Sin... Read More about Parametric study of optimum gate-resistance for performance and short-circuit robustness of novel half-bridge IGBT modules.

Individual device active cooling for enhanced system-level power density and more uniform temperature distribution (2018)
Conference Proceeding
Zeng, Y., Hussein, A., & Castellazzi, A. (2018). Individual device active cooling for enhanced system-level power density and more uniform temperature distribution. In 2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD) (471-474). https://doi.org/10.1109/ISPSD.2018.8393705

This paper provides a method of individual device active cooling system to balance the temperature distribution of system-level power density. 3L-ANPC GaN inverter was used to test and prove the feasibility of it in using multi-level systems.

P-gate GaN HEMT gate-driver design for joint optimization of switching performance, freewheeling conduction and short-circuit robustness (2018)
Conference Proceeding
Wu, H., Fayyaz, A., & Castellazzi, A. (2018). P-gate GaN HEMT gate-driver design for joint optimization of switching performance, freewheeling conduction and short-circuit robustness. In Proceedings of the 30th International Symposium on Power Semiconductor Devices and ICs, 13-17 May 2018, Chicago, USA (232-235). https://doi.org/10.1109/ISPSD.2018.8393645

This paper proposes the design and prototype development and testing of a gate-driver which enables to jointly optimize the performance in application of gate-injection type high electron mobility transistors, taking into account a number of diverse... Read More about P-gate GaN HEMT gate-driver design for joint optimization of switching performance, freewheeling conduction and short-circuit robustness.

High-Temperature validated SiC power MOSFET model for flexible robustness analysis of multi-chip structures (2018)
Conference Proceeding
Riccio, M., d'Alessandro, V., Romano, G., Maresca, L., Breglio, G., Irace, A., & Castellazzi, A. (2018). High-Temperature validated SiC power MOSFET model for flexible robustness analysis of multi-chip structures. In Proceedings of the 30th International Symposium on Power Semiconductor Devices & ICs May 13-17, 2018, Chicago, USA (443-446). https://doi.org/10.1109/ISPSD.2018.8393698

This paper presents a statistical analysis on the effect of parallel connection of SiC power MOSFETs in high current applications. To this purpose, a reliable temperature-dependent SPICE model is calibrated on static and dynamic experimental curves o... Read More about High-Temperature validated SiC power MOSFET model for flexible robustness analysis of multi-chip structures.

Dynamic performance analysis of a 3.3 kV SiC MOSFET half-bridge module with parallel chips and body-diode freewheeling (2018)
Conference Proceeding
Hussein, A., Mouawad, B., & Castellazzi, A. (2018). Dynamic performance analysis of a 3.3 kV SiC MOSFET half-bridge module with parallel chips and body-diode freewheeling. In 2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD) (463-466). https://doi.org/10.1109/ISPSD.2018.8393703

Recently, 3.3 and 6.5 kV power MOSFETs have been introduced. Based on the 3.3 kV device, a 100 A half-bridge power module has been developed, using parallel chips for current scaling and relying exclusively on the use of the transistors body-diode fo... Read More about Dynamic performance analysis of a 3.3 kV SiC MOSFET half-bridge module with parallel chips and body-diode freewheeling.

SiC MOSFET device parameter spread and ruggedness of parallel multichip structures (2018)
Journal Article
Castellazzi, A., Fayyaz, A., & Kraus, R. (2018). SiC MOSFET device parameter spread and ruggedness of parallel multichip structures. Materials Science Forum, 924, (811-817). doi:10.4028/www.scientific.net/msf.924.811. ISSN 0255-5476

This paper presents a preliminary study of the impact of device electro-thermal parameter spread and temperature variation on the robustness of SiC MOSFET parallel multi-chip power switch architectures. Reference is made to 1200 V – 80 mΩ rated comme... Read More about SiC MOSFET device parameter spread and ruggedness of parallel multichip structures.

Mechanical modelling of high power lateral IGBT for LED driver applications (2018)
Conference Proceeding
Bailey, C., Rajaguru, P., Lu, H., Castellazzi, A., Antonini, M., Pathirana, V., …Aldhaher, S. (2018). Mechanical modelling of high power lateral IGBT for LED driver applications. In IEEE 68th Electronic Components and Technology Conference (1375-1381). https://doi.org/10.1109/ECTC.2018.00210

An assembly exercise was proposed to replace the vertical MOSFET by lateral IGBTs (LIGBT) for LED driver systems which can provide significant advantages in terms of size reduction (LIGBTs are ten times smaller than vertical MOSFETs) and lower compon... Read More about Mechanical modelling of high power lateral IGBT for LED driver applications.