Research Repository

See what's under the surface


Effect of parameters variability on the performance of SiC MOSFET modules (2018)
Conference Proceeding
Borghese, A., Riccio, M., Breglio, G., Fayyaz, A., Castellazzi, A., Irace, A., & Marese, L. (2018). Effect of parameters variability on the performance of SiC MOSFET modules

This paper introduces a statistical analysis of the impact of devices parameters dispersion on the performances of parallel connected SiC MOSFETs. To this purpose, the statistical fluctuations of threshold voltage and current factor are evaluated on... Read More

Variable frequency control and filter design for optimum energy extraction from a SiC wind inverter (2018)
Conference Proceeding
Hussein, A., & Castellazzi, A. (2018). Variable frequency control and filter design for optimum energy extraction from a SiC wind inverter. In 2018 International Power Electronics Conference (IPEC-Niigata 2018 -ECCE Asia)doi:10.23919/IPEC.2018.8507493

This paper proposes the optimised control and filter design of a 12 kW 3-phase 2-level wind inverter specifically taking into account the intermittent nature of the input power. In particular, the applied control scheme aims at optimising the low-loa... Read More

Experimentally validated methodology for real-time temperature cycle tracking in SiC power modules (2018)
Journal Article
Stella, F., Olanrewaju, O., Yang, Z., Castellazzi, A., & Pellegrino, G. (2018). Experimentally validated methodology for real-time temperature cycle tracking in SiC power modules. Microelectronics Reliability, 88-90, 615-619. doi:10.1016/j.microrel.2018.07.072

The ability to monitor temperature variations during the actual operation of power modules is key to reliability investigations and the development of lifetime prediction strategies. This paper proposes an original solution, specifically devised with... Read More

GaN transistors efficient cooling by graphene foam (2018)
Journal Article
Antonini, M., Cova, P., Delmonte, N., & Castellazzi, A. (2018). GaN transistors efficient cooling by graphene foam. Microelectronics Reliability, 88-90, 812-816. doi:10.1016/j.microrel.2018.07.004

Graphene conductive foams have shown very high potential as cooling material in electronic systems. Its exploitation with discrete GaN transistors is demonstrated in this paper. A proper experimental setup is developed to extract the high temperature... Read More

VTH subthreshold hysteresis technology and temperature dependence in commercial 4H-SiC MOSFETs (2018)
Journal Article
Asllani, B., Fayyaz, A., Castellazzi, A., Morel, H., & Planson, D. (2018). VTH subthreshold hysteresis technology and temperature dependence in commercial 4H-SiC MOSFETs. Microelectronics Reliability, 88-90, 604-609. doi:10.1016/j.microrel.2018.06.047

VTH subthreshold hysteresis measured in commercially available 4H-SiC MOSFET is more pronounced in trench than in planar ones. All planar devices from different manufacturers exhibit an inverse temperature dependence, with the hysteresis amplitude re... Read More

Avalanche ruggedness of parallel SiC power MOSFETs (2018)
Journal Article
Fayyaz, A., Asllani, B., Castellazzi, A., Riccio, M., & Irace, A. (2018). Avalanche ruggedness of parallel SiC power MOSFETs. Microelectronics Reliability, 88-90, 666-670. doi:10.1016/j.microrel.2018.06.038

The aim of this paper is to investigate the impact of electro-thermal device parameter spread on the avalanche ruggedness of parallel silicon carbide (SiC) power MOSFETs representative of multi-chip layout within an integrated power module. The tests... Read More

Parametric study of optimum gate-resistance for performance and short-circuit robustness of novel half-bridge IGBT modules (2018)
Conference Proceeding
Cheraghinezhad, A., Hussein, A., Castellazzi, A., & Saito, K. (in press). Parametric study of optimum gate-resistance for performance and short-circuit robustness of novel half-bridge IGBT modules

This paper jointly investigates the switching performance and the short-circuit (S.C) turn off behavior of a novel half-bridge (2in1) IGBT power module concept with the low stray inductance (Lσ), which has been available in the market since 2015. Sin... Read More

Reliability analysis of SiC MOSFET power module for more electric aircraft motor drive applications (2018)
Conference Proceeding
O'Donnell, S., Wheeler, P., & Castellazzi, A. (in press). Reliability analysis of SiC MOSFET power module for more electric aircraft motor drive applications

This paper presents a reliability study on a Microsemi 5 kVA Integrated Power Solutions (IPS) module designed to drive an electrical motor in a More Electric Aircraft actuation system. The measures taken in the design of the product and the reliabili... Read More

Individual device active cooling for enhanced system-level power density and more uniform temperature distribution (2018)
Conference Proceeding
Zeng, Y., Hussein, A., & Castellazzi, A. (2018). Individual device active cooling for enhanced system-level power density and more uniform temperature distribution. In 2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD)doi:10.1109/ispsd.2018.8393705

This paper provides a method of individual device active cooling system to balance the temperature distribution of system-level power density. 3L-ANPC GaN inverter was used to test and prove the feasibility of it in using multi-level systems.

Dynamic performance analysis of a 3.3 kV SiC MOSFET half-bridge module with parallel chips and body-diode freewheeling (2018)
Conference Proceeding
Hussein, A., Mouawad, B., & Castellazzi, A. (2018). Dynamic performance analysis of a 3.3 kV SiC MOSFET half-bridge module with parallel chips and body-diode freewheeling. In 2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD)doi:10.1109/ispsd.2018.8393703

Recently, 3.3 and 6.5 kV power MOSFETs have been introduced. Based on the 3.3 kV device, a 100 A half-bridge power module has been developed, using parallel chips for current scaling and relying exclusively on the use of the transistors body-diode fo... Read More

SiC MOSFET device parameter spread and ruggedness of parallel multichip structures (2018)
Journal Article
Castellazzi, A., Fayyaz, A., & Kraus, R. (2018). SiC MOSFET device parameter spread and ruggedness of parallel multichip structures. Materials Science Forum, 924, (811-817). doi:10.4028/www.scientific.net/msf.924.811. ISSN 0255-5476

This paper presents a preliminary study of the impact of device electro-thermal parameter spread and temperature variation on the robustness of SiC MOSFET parallel multi-chip power switch architectures. Reference is made to 1200 V – 80 mrated comme... Read More

Mechanical modelling of high power lateral IGBT for LED driver applications (2018)
Conference Proceeding
Bailey, C., Rajaguru, P., Lu, H., Castellazzi, A., Antonini, M., Pathirana, V., …Aldhaher, S. (2018). Mechanical modelling of high power lateral IGBT for LED driver applications. In IEEE 68th Electronic Components and Technology Conferencedoi:10.1109/ECTC.2018.00210

An assembly exercise was proposed to replace the vertical MOSFET by lateral IGBTs (LIGBT) for LED driver systems which can provide significant advantages in terms of size reduction (LIGBTs are ten times smaller than vertical MOSFETs) and lower compon... Read More

Experimental demonstration of an optimised PWM scheme for more even device electro-thermal stress in a 3-Level ANPC GaN inverter (2018)
Conference Proceeding
Zeng, Y., Gurpinar, E., Hussein, A., & Castellazzi, A. (2018). Experimental demonstration of an optimised PWM scheme for more even device electro-thermal stress in a 3-Level ANPC GaN inverter

GaN device as one potential power electronics device has been gained much attention recently. One of the power conversion systems, ANPC inverter using GaN HEMT is potentially considered to be prospective usage of low loss and high efficiency. In this... Read More

Device loss model of a fully SiC based dual active bridge considering the effect of synchronous rectification and deadtime (2018)
Conference Proceeding
Wang, Z., & Castellazzi, A. (2018). Device loss model of a fully SiC based dual active bridge considering the effect of synchronous rectification and deadtime. doi:10.1109/spec.2017.8333662

It is becoming a great interest to employ SiC based power devices in dual active bridge (DAB) converter as an alternative to conventional Si-IGBT, due to its higher switching frequency potential, smaller switching losses as well as the capability to... Read More

Design of low inductance switching power cell for GaN HEMT based inverter (2017)
Journal Article
Gurpinar, E., Iannuzzo, F., Yang, Y., Castellazzi, A., & Blaabjerg, F. (in press). Design of low inductance switching power cell for GaN HEMT based inverter. IEEE Transactions on Industry Applications, doi:10.1109/TIA.2017.2777417. ISSN 0093-9994

In this paper, an ultra-low inductance power cell is designed for a three-Level Active Neutral Point Clamped (3LANPC) based on 650 V gallium nitride (GaN) HEMT devices. The 3L-ANPC topology with GaN HEMT devices and the selected modulation scheme sui... Read More