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Thermoelectric properties of nanostructured tetrathiotetracene iodide crystals in a two-dimensional model

Sanduleac, Ionel; Casian, A.I.; Pflaum, Jens

Authors

Ionel Sanduleac

A.I. Casian

Jens Pflaum



Abstract

Previously, it has been predicted that nanostructured crystals of tetrathiotetracene iodide are very promising candidates for thermoelectric applications. However, these predictions are based on a strictly one-dimensional (1D) model. In order to verify these conclusions, a two-dimensional (2D) model is elaborated which explicitly takes into account the weak interaction of carriers with the nearest conductive chains. It is shown that for crystals with a rather low degree of purity this interaction does not affect significantly the results obtained by the 1D approximation, but for ultrapure crystals this interaction can no longer be neglected.

Citation

Sanduleac, I., Casian, A., & Pflaum, J. (2014). Thermoelectric properties of nanostructured tetrathiotetracene iodide crystals in a two-dimensional model. Journal of Nanoelectronics and Optoelectronics, 9(2), https://doi.org/10.1166/jno.2014.1574

Journal Article Type Article
Publication Date Apr 1, 2014
Deposit Date Jan 14, 2016
Journal Journal of Nanoelectronics and Optoelectronics
Print ISSN 1555-130X
Electronic ISSN 1555-1318
Publisher American Scientific Publishers
Peer Reviewed Not Peer Reviewed
Volume 9
Issue 2
DOI https://doi.org/10.1166/jno.2014.1574
Keywords interchain interaction, tetrathiotetracene iodide, thermoelectric figure of merit, two-dimensional crystal model
Public URL https://nottingham-repository.worktribe.com/output/996396
Publisher URL http://www.ingentaconnect.com/content/asp/jno/2014/00000009/00000002/art00015?token=00611effeb893785391d4a41333c4a2f7a386a6f572b67283e2846444f6d62222c227e3725303329763bdb0cbc5f5a83d
Additional Information A paper produced for the H2ESOT project, a collaborative FP7 funded project led by Professor Simon Woodward from University of Nottingham and supported under the EU ENERGY Theme for Future Emerging Technologies

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