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A physics-based compact model of SiC power MOSFETs

Kraus, Rainer; Castellazzi, Alberto

A physics-based compact model of SiC power MOSFETs Thumbnail


Rainer Kraus

Alberto Castellazzi


The presented compact model of SiC power MOSFETs is based on a thorough consideration of the physical phenomena which are important for the device characteristics and its electrothermal behavior. The model includes descriptions of the dependence of channel charge and electron mobility on the charge of interface traps and a simple but effective calculation of the voltage-dependent drain resistance. Comparisons with both physical 2-D device simulations and experiments validate the correctness of the modeling approach and the accuracy of the results.

Journal Article Type Article
Acceptance Date Sep 23, 2015
Online Publication Date Oct 7, 2015
Publication Date Aug 1, 2016
Deposit Date May 18, 2016
Publicly Available Date May 18, 2016
Journal IEEE Transactions on Power Electronics
Print ISSN 0885-8993
Electronic ISSN 0885-8993
Publisher Institute of Electrical and Electronics Engineers
Peer Reviewed Peer Reviewed
Volume 31
Issue 8
Pages 5863-5870
Keywords Compact model, drain resistance, interface traps, Power MOSFET, silicon carbide
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Additional Information 2015 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other users, including reprinting/ republishing this material for advertising or promotional purposes, creating new collective works for resale or redistribution to servers or lists, or reuse of any copyrighted components of this work in other works.


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