A physics-based compact model of SiC power MOSFETs

Kraus, Rainer; Castellazzi, Alberto

Abstract

The presented compact model of SiC power MOSFETs is based on a thorough consideration of the physical phenomena which are important for the device characteristics and its electrothermal behavior. The model includes descriptions of the dependence of channel charge and electron mobility on the charge of interface traps and a simple but effective calculation of the voltage-dependent drain resistance. Comparisons with both physical 2-D device simulations and experiments validate the correctness of the modeling approach and the accuracy of the results.

Citation

Kraus, R., & Castellazzi, A. (2016). A physics-based compact model of SiC power MOSFETs. IEEE Transactions on Power Electronics, 31(8), 5863-5870. https://doi.org/10.1109/TPEL.2015.2488106

• Journal Article Type: Article
• Acceptance Date: Sep 23, 2015
• Online Publication Date: Oct 7, 2015
• Publication Date: Aug 1, 2016
• Deposit Date: May 18, 2016
• Publicly Available Date: May 18, 2016
• Journal: IEEE Transactions on Power Electronics
• Print ISSN: 0885-8993
• Electronic ISSN: 0885-8993
• Publisher: Institute of Electrical and Electronics Engineers
• Peer Reviewed: Peer Reviewed
• Volume: 31
• Issue: 8
• Pages: 5863-5870
• DOI: https://doi.org/10.1109/TPEL.2015.2488106
• Keywords: Compact model, drain resistance, interface traps, Power MOSFET, silicon carbide
• Public URL: https://nottingham-repository.worktribe.com/output/975538
• Publisher URL: http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=7293697&tag=1
• Additional Information: 2015 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other users, including reprinting/ republishing this material for advertising or promotional purposes, creating new collective works for resale or redistribution to servers or lists, or reuse of any copyrighted components of this work in other works.