Skip to main content

Research Repository

Advanced Search

Evaluation of SiC Schottky diodes using pressure contacts

Ortiz Gonzalez, J.; Alatise, O.; Aliyu, Attahir Murtala; Rajaguru, Pushparajah; Castellazzi, Alberto; Ran, L.; Mawby, P.; Bailey, Christopher

Authors

J. Ortiz Gonzalez

O. Alatise

Attahir Murtala Aliyu

Pushparajah Rajaguru

Alberto Castellazzi alberto.castellazzi@nottingham.ac.uk

L. Ran

P. Mawby

Christopher Bailey christopher.bailey@nottingham.ac.uk



Abstract

The thermomechanical reliability of SiC power devices and modules is increasingly becoming of interest especially for high power applications where power cycling performance is critical. Press-pack assemblies are a trusted and reliable packaging solution that has traditionally been used for high power thyristorbased applications in FACTS/HVDC, although press-pack IGBTs have become commercially available more recently. These press-pack IGBTs require anti-parallel PiN diodes for enabling reverse conduction capability. In these high power applications, paralleling chips for high current conduction capability is a requirement, hence, electrothermal stability during current sharing is critical. SiC Schottky diodes not only exhibit the advantages of wide bandgap technology compared to silicon PiN diodes, but they have significantly lower zero temperature coefficient (ZTC) meaning they are more electrothermally stable. The lower ZTC is due to the unipolar nature of SiC Schottky diodes as opposed to the bipolar nature of PiN diodes. This paper investigates the implementation and reliability of SiC Schottky diodes in press-pack assemblies. The impact of pressure loss on the electrothermal stability of parallel devices is investigated.

Journal Article Type Article
Publication Date Oct 1, 2017
Journal IEEE Transactions on Industrial Electronics
Print ISSN 0278-0046
Electronic ISSN 1557-9948
Publisher Institute of Electrical and Electronics Engineers
Peer Reviewed Peer Reviewed
Volume 64
Issue 10
APA6 Citation Ortiz Gonzalez, J., Alatise, O., Aliyu, A. M., Rajaguru, P., Castellazzi, A., Ran, L., …Bailey, C. (2017). Evaluation of SiC Schottky diodes using pressure contacts. IEEE Transactions on Industrial Electronics, 64(10), doi:10.1109/TIE.2017.2677348
DOI https://doi.org/10.1109/TIE.2017.2677348
Keywords semiconductor device packaging, Schottky diodes, Silicon carbide, pressure packaging
Publisher URL http://ieeexplore.ieee.org/document/7869354/
Copyright Statement Copyright information regarding this work can be found at the following address: http://eprints.nottingh.../end_user_agreement.pdf
Additional Information (c) 2017 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other users, including reprinting/ republishing this material for advertising or promotional purposes, creating new collective works for resale or redistribution to servers or lists, or reuse of any copyrighted components of this work in other works

Files

Evaluation of SiC Schottky Diodes Using Pressure Contacts.pdf (6.7 Mb)
PDF

Copyright Statement
Copyright information regarding this work can be found at the following address: http://eprints.nottingham.ac.uk/end_user_agreement.pdf





You might also like



Downloadable Citations

;