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Magnetotransport and lateral confinement in an InSe van der Waals heterostructure

Lee, Yongjin; Pisoni, Riccardo; Overweg, Hiske; Eich, Marius; Rickhaus, Peter; Patane, Amalia; Kudrynskyi, Zakhar; Kovalyuk, Zakhar D.; Gorbachev, Roman; Watanabe, Kenji; Taniguchi, Takashi; Ihn, Thomas; Ensslin, Klaus

Magnetotransport and lateral confinement in an InSe van der Waals heterostructure Thumbnail


Yongjin Lee

Riccardo Pisoni

Hiske Overweg

Marius Eich

Peter Rickhaus

Nottingham Research Anne Mclaren Fellows

Zakhar D. Kovalyuk

Roman Gorbachev

Kenji Watanabe

Takashi Taniguchi

Thomas Ihn

Klaus Ensslin


In the last six years, Indium selenide (InSe) has appeared as a new van der Waals heterostructure platform which has been extensively studied due to its unique electronic and optical properties. Such as transition metal dichalcogenides (TMDCs), the considerable bandgap and high electron mobility can provide a potential optoelectronic application. Here we present low-temperature transport measurements on a few-layer InSe van der Waals heterostructure with graphene-gated contacts. For high magnetic fields, we observe magnetoresistance minima at even filling factors related to two-fold spin degeneracy. By electrostatic gating with negatively biased split gates, a one-dimensional channel is realized. Close to pinch-off, transport through the constriction is dominated by localized states with charging energies ranging from 2 to 5 meV. This work opens new possibility to explore the low-dimensional physics including quantum point contact and quantum dot.

Journal Article Type Article
Acceptance Date Jun 8, 2018
Online Publication Date Jun 8, 2018
Publication Date 2018-07
Deposit Date Jun 11, 2018
Publicly Available Date Jun 9, 2019
Journal 2D Materials
Electronic ISSN 2053-1583
Publisher IOP Publishing
Peer Reviewed Peer Reviewed
Volume 5
Issue 3
Article Number 035040
Public URL
Publisher URL


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