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Epitaxial growth of ?-InSe and ?, ?, and ?-In2Se3 on ?-GaSe


Nilanthy Balakrishnan

Elisabeth D. Steer

Emily F. Smith

Zakhar D. Kovalyuk


We demonstrate that ?-InSe and the ?, ? and ? phases of In2Se3 can be grown epitaxially on ?-GaSe substrates using a physical vapour transport method. By exploiting the temperature gradient within the tube furnace, we can grow selectively different phases of InxSey depending on the position of the substrate within the furnace. The uniform cleaved surface of ?-GaSe enables the epitaxial growth of the InxSey layers, which are aligned over large areas. The InxSey epilayers are characterised using Raman, photoluminescence, X-ray photoelectron and electron dispersive X-ray spectroscopies. Each InxSey phase and stoichiometry exhibits distinct optical and vibrational properties, providing a tuneable photoluminescence emission range from 1.3 eV to ~ 2 eV suitable for exploitation in electronics and optoelectronics.


Balakrishnan, N., Steer, E. D., Smith, E. F., Kudrynskyi, Z. R., Kovalyuk, Z. D., Eaves, L., …Beton, P. H. (2018). Epitaxial growth of γ-InSe and α, β, and γ-In2Se3 on ε-GaSe. 2D Materials, 5(3),

Journal Article Type Article
Acceptance Date May 11, 2018
Online Publication Date May 14, 2018
Publication Date Jun 1, 2018
Deposit Date May 15, 2018
Publicly Available Date May 15, 2018
Journal 2D Materials
Electronic ISSN 2053-1583
Publisher IOP Publishing
Peer Reviewed Peer Reviewed
Volume 5
Issue 3
Keywords Indium Selenide, III-VI van der Waals layered crystals, 2D materials, physical vapour transport
Public URL
Publisher URL


Balakrishnan_2018_2D_Mater._5_035026.pdf (2 Mb)

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