Optical detection and spatial modulation of mid-infrared surface plasmon polaritons in a highly doped semiconductor

Abstract

Highly doped semiconductors (HDSCs) are promising candidates for plasmonic applications in the mid-infrared (MIR) spectral range. This work examines a recent addition to the HDSC family, the dilute nitride alloy In(AsN). Post-growth hydrogenation of In(AsN) creates a highly conducting channel near the surface and a surface plasmon polariton detected by attenuated total reflection techniques. The suppression of plasmonic effects following a photo-annealing of the semiconductor is attributed to the dissociation of the N-H bond. This offers new routes for direct patterning of MIR plasmonic structures by laser writing.

Citation

Di Paola, D., Velichko, A. V., Bomers, M., Balakrishnan, N., Makarovsky, O., Capizzi, M., …Patanè, A. (2018). Optical detection and spatial modulation of mid-infrared surface plasmon polaritons in a highly doped semiconductor. Advanced Optical Materials, 6(3), Article 1700492. https://doi.org/10.1002/adom.201700492

• Journal Article Type: Article
• Acceptance Date: Nov 14, 2017
• Online Publication Date: Dec 28, 2017
• Publication Date: Feb 5, 2018
• Deposit Date: Nov 20, 2017
• Publicly Available Date: Dec 28, 2017
• Journal: Advanced Optical Materials
• Electronic ISSN: 2195-1071
• Publisher: Wiley
• Peer Reviewed: Peer Reviewed
• Volume: 6
• Issue: 3
• Article Number: 1700492
• DOI: https://doi.org/10.1002/adom.201700492
• Keywords: plasmonics, semiconductors, InAs, mid-infrared, hydrogen
• Public URL: https://nottingham-repository.worktribe.com/output/909974
• Publisher URL: http://onlinelibrary.wiley.com/doi/10.1002/adom.201700492/full