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Modular integrated SiC MOSFET matrix converter

Aliyu, Attahir Murtala; Castellazzi, Alberto; Lasserre, Philippe; Delmonte, N.

Authors

Attahir Murtala Aliyu

Alberto Castellazzi alberto.castellazzi@nottingham.ac.uk

Philippe Lasserre

N. Delmonte



Abstract

This paper presents the assembly and characterization of an integrated all SiC 3-to-1 phases matrix converter, of typical application in domains requiring harsh environment withstand capability with high reliability and availability levels (e.g., renewable energies, solid-state transformation, smart grids, electric transport). Commercially available silicon-carbide (SiC) power MOSFETs are procured in bare-die form to develop custom-packaged bi-directional switches, with an advanced approach aiming to optimize the electro-thermal and electro-magnetic performance at switch level. Advanced cooling and packaging solutions at system level enable modularity with reduced impact of single component failure on the overall system, contributing to significantly reduced maintenance and repair costs.

Citation

Aliyu, A. M., Castellazzi, A., Lasserre, P., & Delmonte, N. (in press). Modular integrated SiC MOSFET matrix converter

Conference Name International Future Energy Electronics Conference 2017 - ECCE Asia (IFEEC 2017 - ECCE Asia)
End Date Jun 7, 2017
Acceptance Date Dec 30, 2016
Online Publication Date Jul 27, 2017
Deposit Date Nov 27, 2017
Publicly Available Date Nov 27, 2017
Peer Reviewed Peer Reviewed
Keywords Wide Band-Gap power Devices; SiC Power MOSFETs; Matrix converters, Integration
Public URL http://eprints.nottingham.ac.uk/id/eprint/48351
Publisher URL http://ieeexplore.ieee.org/abstract/document/7992209/
Related Public URLs http://www.ifeec.tw/
Copyright Statement Copyright information regarding this work can be found at the following address: http://eprints.nottingh.../end_user_agreement.pdf
Additional Information Published in: 2017 IEEE 3rd International Future Energy Electronics Conference and ECCE Asia (IFEEC 2017 - ECCE Asia). IEEE, c2017. ISBN: 978-1-5090-5157-1. pp. 1184-1188, doi:10.1109/IFEEC.2017.7992209 © 2017 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.

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Copyright Statement
Copyright information regarding this work can be found at the following address: http://eprints.nottingham.ac.uk/end_user_agreement.pdf





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