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Experimental study of the short-circuit performance for a 600V normally-off p-gate GaN HEMT

Oeder, Thorsten; Castellazzi, Alberto; Pfost, Martin

Authors

Thorsten Oeder

Alberto Castellazzi alberto.castellazzi@nottingham.ac.uk

Martin Pfost



Abstract

In this paper, the short-circuit robustness of a normally off GaN HEMT is investigated in relation to applied bias conditions and pulse duration. The results align with previous studies on normally-on devices in highlighting an electrical type of failure. Here, however, the relevance of the specific gate-drive circuit design and corresponding device operational condtions is demonstrated. A gate-bias dependence (GBD) of the failure, correlated to the applied drain-source voltage, is introduced as a novel specific feature for the p-Gate type device.

Citation

Oeder, T., Castellazzi, A., & Pfost, M. (in press). Experimental study of the short-circuit performance for a 600V normally-off p-gate GaN HEMT

Conference Name 29th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2017
End Date Jun 1, 2017
Acceptance Date Jan 25, 2017
Online Publication Date Jul 24, 2017
Deposit Date Oct 26, 2017
Publicly Available Date Oct 26, 2017
Journal International Symposium on Power Semiconductor Devices and ICs
Electronic ISSN 1063-6854
Publisher Institute of Electrical and Electronics Engineers
Peer Reviewed Peer Reviewed
Keywords Short-Circuit, GaN, HEMT, Normally-Off, p-Gate,
Gate-Bias Dependence
Public URL http://eprints.nottingham.ac.uk/id/eprint/47539
Publisher URL http://ieeexplore.ieee.org/document/7988925/
Related Public URLs http://www.ispsd2017.com/
Copyright Statement Copyright information regarding this work can be found at the following address: http://eprints.nottingham.ac.uk/end_user_agreement.pdf
Additional Information Published in: 2017 (IEEE) International Conference on Power Semiconductor Devices and ICs (ISPSD) IEEE, 2007. issn: 1063-6854, pp. 211-214, doi: 10.23919/ISPSD.2017.7988925

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Copyright Statement
Copyright information regarding this work can be found at the following address: http://eprints.nottingham.ac.uk/end_user_agreement.pdf





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