Experimental study of the short-circuit performance for a 600V normally-off p-gate GaN HEMT

Oeder, Thorsten; Castellazzi, Alberto; Pfost, Martin

Abstract

In this paper, the short-circuit robustness of a normally off GaN HEMT is investigated in relation to applied bias conditions and pulse duration. The results align with previous studies on normally-on devices in highlighting an electrical type of failure. Here, however, the relevance of the specific gate-drive circuit design and corresponding device operational condtions is demonstrated. A gate-bias dependence (GBD) of the failure, correlated to the applied drain-source voltage, is introduced as a novel specific feature for the p-Gate type device.

Citation

Oeder, T., Castellazzi, A., & Pfost, M. (in press). Experimental study of the short-circuit performance for a 600V normally-off p-gate GaN HEMT.

• Conference Name: 29th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2017
• End Date: Jun 1, 2017
• Acceptance Date: Jan 25, 2017
• Online Publication Date: Jul 24, 2017
• Deposit Date: Oct 26, 2017
• Publicly Available Date: Oct 26, 2017
• Journal: International Symposium on Power Semiconductor Devices and ICs
• Electronic ISSN: 1063-6854
• Publisher: Institute of Electrical and Electronics Engineers
• Peer Reviewed: Peer Reviewed
• Keywords: Short-Circuit, GaN, HEMT, Normally-Off, p-Gate,; Gate-Bias Dependence
• Public URL: https://nottingham-repository.worktribe.com/output/874083
• Publisher URL: http://ieeexplore.ieee.org/document/7988925/
• Related Public URLs: http://www.ispsd2017.com/
• Additional Information: Published in: 2017 (IEEE) International Conference on Power Semiconductor Devices and ICs (ISPSD) IEEE, 2007. issn: 1063-6854, pp. 211-214, doi: 10.23919/ISPSD.2017.7988925