Thorsten Oeder
Experimental study of the short-circuit performance for a 600V normally-off p-gate GaN HEMT
Oeder, Thorsten; Castellazzi, Alberto; Pfost, Martin
Authors
Alberto Castellazzi
Martin Pfost
Abstract
In this paper, the short-circuit robustness of a normally off GaN HEMT is investigated in relation to applied bias conditions and pulse duration. The results align with previous studies on normally-on devices in highlighting an electrical type of failure. Here, however, the relevance of the specific gate-drive circuit design and corresponding device operational condtions is demonstrated. A gate-bias dependence (GBD) of the failure, correlated to the applied drain-source voltage, is introduced as a novel specific feature for the p-Gate type device.
Citation
Oeder, T., Castellazzi, A., & Pfost, M. (in press). Experimental study of the short-circuit performance for a 600V normally-off p-gate GaN HEMT.
Conference Name | 29th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2017 |
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End Date | Jun 1, 2017 |
Acceptance Date | Jan 25, 2017 |
Online Publication Date | Jul 24, 2017 |
Deposit Date | Oct 26, 2017 |
Publicly Available Date | Oct 26, 2017 |
Journal | International Symposium on Power Semiconductor Devices and ICs |
Electronic ISSN | 1063-6854 |
Publisher | Institute of Electrical and Electronics Engineers |
Peer Reviewed | Peer Reviewed |
Keywords | Short-Circuit, GaN, HEMT, Normally-Off, p-Gate, Gate-Bias Dependence |
Public URL | https://nottingham-repository.worktribe.com/output/874083 |
Publisher URL | http://ieeexplore.ieee.org/document/7988925/ |
Related Public URLs | http://www.ispsd2017.com/ |
Additional Information | Published in: 2017 (IEEE) International Conference on Power Semiconductor Devices and ICs (ISPSD) IEEE, 2007. issn: 1063-6854, pp. 211-214, doi: 10.23919/ISPSD.2017.7988925 |
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