Chip-on-board assembly of 800V Si L-IGBTs for high performance ultra-compact LED drivers

Aliyu, Attahir Murtala; Mouawad, Bassem; Castellazzi, Alberto; Rajaguru, P.; Bailey, C.; Pathirana, V.; Udugampola, N.; Trajkovic, T.; Udrea, F.

Abstract

This paper presents a novel chip on board assembly design for an integrated power switch, based on high power density 800V silicon lateral insulated-gate bipolar transistor (Si LIGBT) technology. LIGBTs offer much higher current densities (5-10X), significantly lower leakage currents, and lower parasitic device capacitances and, gate charge compared to conventional vertical MOSFETs commonly used in LED drivers. The higher voltage ratings offered (up to 1kV), the development of high voltage interconnection between parallel IGBTs, self-isolated nature and absence of termination region unlike in a vertical MOSFET makes these devices ideal for ultra-compact, low bill of materials (BOM) count LED drives. Chip on-board LIGBTs also offer significant advantages over MOSFETs due to high ambient temperatures seen on most of the LED lamps as the LIGBTs on-state losses increase only marginally with temperature. The design is based on a built-in reliability approach which focuses on a compact LED driver as a case-study of a cost-sensitive large volume production item.

Citation

Aliyu, A. M., Mouawad, B., Castellazzi, A., Rajaguru, P., Bailey, C., Pathirana, V., …Udrea, F. (in press). Chip-on-board assembly of 800V Si L-IGBTs for high performance ultra-compact LED drivers.

• Conference Name: 29th International Symposium on Power Semiconductor Devices and ICs (ISPSD 2017)
• End Date: Jun 1, 2017
• Acceptance Date: Jan 25, 2017
• Online Publication Date: Jul 24, 2017
• Deposit Date: Oct 12, 2017
• Publicly Available Date: Oct 12, 2017
• Peer Reviewed: Peer Reviewed
• Keywords: chip-on-board; lateral IGBT; LED drivers; packaging; reliability
• Public URL: https://nottingham-repository.worktribe.com/output/873959
• Publisher URL: http://ieeexplore.ieee.org/document/7988976/
• Related Public URLs: http://www.ispsd2017.com/index.html
• Additional Information: Published in: Proceedings of the 29th International Symposium on Power Semiconductor Devices and ICs, 28 May-1 June 2017, Sapporo, Japan, p. 431-434. ISSN 1946-0201. doi:10.23919/ISPSD.2017.7988976; ; © 2017 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.