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Monte Carlo study on anomalous carrier diffusion in inhomogeneous semiconductors

Mori, N.; Hill, R.J.A.; Patanè, Amalia; Eaves, Laurence

Authors

N. Mori

R.J.A. Hill

Amalia Patanè



Abstract

We perform ensemble Monte Carlo simulations of electron diffusion in high mobility inhomogeneous InAs layers. Electrons move ballistically for short times while moving diffusively for sufficiently long times. We find that electrons show anomalous diffusion in the intermediate time domain. Our study suggests that electrons in inhomogeneous InAs could be used to experimentally explore generalized random walk phenomena, which, some studies assert, also occur naturally in the motion of animal foraging paths.

Journal Article Type Article
Publication Date Oct 13, 2015
Journal Journal of Physics: Conference Series
Print ISSN 1742-6588
Electronic ISSN 1742-6596
Publisher IOP Publishing
Peer Reviewed Peer Reviewed
Volume 647
Article Number 012059
APA6 Citation Mori, N., Hill, R., Patanè, A., & Eaves, L. (2015). Monte Carlo study on anomalous carrier diffusion in inhomogeneous semiconductors. Journal of Physics: Conference Series, 647, https://doi.org/10.1088/1742-6596/647/1/012059
DOI https://doi.org/10.1088/1742-6596/647/1/012059
Publisher URL http://iopscience.iop.org/article/10.1088/1742-6596/647/1/012059/meta
Copyright Statement Copyright information regarding this work can be found at the following address: http://creativecommons.org/licenses/by/4.0

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Copyright Statement
Copyright information regarding this work can be found at the following address: http://creativecommons.org/licenses/by/4.0





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