Graphene-hexagonal boron nitride resonant tunneling diodes as high-frequency oscillators
Gaskell, Jennifer; Eaves, Laurence; Novoselov, K.S.; Mishchenko, A.; Geim, A.K.; Fromhold, T.M.; Greenaway, M.T.
LAURENCE EAVES email@example.com
MARK FROMHOLD firstname.lastname@example.org
Professor of Physics
We assess the potential of two-terminal graphene-hexagonal boron nitride-graphene resonant tunneling diodes as high-frequency oscillators, using self-consistent quantum transport and electrostatic simulations to determine the time-dependent response of the diodes in a resonant circuit. We quantify how the frequency and power of the current oscillations depend on the diode and circuit parameters including the doping of the graphene electrodes, device geometry, alignment of the graphene lattices, and the circuit impedances. Our results indicate that current oscillations with frequencies of up to several hundred GHz should be achievable.
|Journal Article Type||Article|
|Publication Date||Sep 9, 2015|
|Journal||Applied Physics Letters|
|Peer Reviewed||Peer Reviewed|
|APA6 Citation||Gaskell, J., Eaves, L., Novoselov, K., Mishchenko, A., Geim, A., Fromhold, T., & Greenaway, M. (2015). Graphene-hexagonal boron nitride resonant tunneling diodes as high-frequency oscillators. Applied Physics Letters, 107(10), https://doi.org/10.1063/1.4930230|
|Copyright Statement||Copyright information regarding this work can be found at the following address: http://creativecommons.org/licenses/by/4.0|
Copyright information regarding this work can be found at the following address: http://creativecommons.org/licenses/by/4.0
You might also like
Resonant tunnelling into the two-dimensional subbands of InSe layers