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Graphene-hexagonal boron nitride resonant tunneling diodes as high-frequency oscillators

Gaskell, Jennifer; Eaves, Laurence; Novoselov, K.S.; Mishchenko, A.; Geim, A.K.; Fromhold, T.M.; Greenaway, M.T.

Authors

Jennifer Gaskell

K.S. Novoselov

A. Mishchenko

A.K. Geim

M.T. Greenaway



Abstract

We assess the potential of two-terminal graphene-hexagonal boron nitride-graphene resonant tunneling diodes as high-frequency oscillators, using self-consistent quantum transport and electrostatic simulations to determine the time-dependent response of the diodes in a resonant circuit. We quantify how the frequency and power of the current oscillations depend on the diode and circuit parameters including the doping of the graphene electrodes, device geometry, alignment of the graphene lattices, and the circuit impedances. Our results indicate that current oscillations with frequencies of up to several hundred GHz should be achievable.

Citation

Gaskell, J., Eaves, L., Novoselov, K., Mishchenko, A., Geim, A., Fromhold, T., & Greenaway, M. (2015). Graphene-hexagonal boron nitride resonant tunneling diodes as high-frequency oscillators. Applied Physics Letters, 107(10), Article 103105. https://doi.org/10.1063/1.4930230

Journal Article Type Article
Acceptance Date Aug 25, 2015
Publication Date Sep 9, 2015
Deposit Date Jul 15, 2016
Publicly Available Date Mar 28, 2024
Journal Applied Physics Letters
Print ISSN 0003-6951
Electronic ISSN 1077-3118
Publisher American Institute of Physics
Peer Reviewed Peer Reviewed
Volume 107
Issue 10
Article Number 103105
DOI https://doi.org/10.1063/1.4930230
Public URL https://nottingham-repository.worktribe.com/output/761682
Publisher URL http://scitation.aip.org/content/aip/journal/apl/107/10/10.1063/1.4930230

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