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Graphene-hexagonal boron nitride resonant tunneling diodes as high-frequency oscillators

Gaskell, Jennifer; Eaves, Laurence; Novoselov, K.S.; Mishchenko, A.; Geim, A.K.; Fromhold, T.M.; Greenaway, M.T.

Authors

Jennifer Gaskell

K.S. Novoselov

A. Mishchenko

A.K. Geim

M.T. Greenaway



Abstract

We assess the potential of two-terminal graphene-hexagonal boron nitride-graphene resonant tunneling diodes as high-frequency oscillators, using self-consistent quantum transport and electrostatic simulations to determine the time-dependent response of the diodes in a resonant circuit. We quantify how the frequency and power of the current oscillations depend on the diode and circuit parameters including the doping of the graphene electrodes, device geometry, alignment of the graphene lattices, and the circuit impedances. Our results indicate that current oscillations with frequencies of up to several hundred GHz should be achievable.

Journal Article Type Article
Publication Date Sep 9, 2015
Journal Applied Physics Letters
Print ISSN 0003-6951
Electronic ISSN 1077-3118
Publisher AIP Publishing
Peer Reviewed Peer Reviewed
Volume 107
Issue 10
Article Number 103105
APA6 Citation Gaskell, J., Eaves, L., Novoselov, K., Mishchenko, A., Geim, A., Fromhold, T., & Greenaway, M. (2015). Graphene-hexagonal boron nitride resonant tunneling diodes as high-frequency oscillators. Applied Physics Letters, 107(10), https://doi.org/10.1063/1.4930230
DOI https://doi.org/10.1063/1.4930230
Publisher URL http://scitation.aip.org/content/aip/journal/apl/107/10/10.1063/1.4930230
Copyright Statement Copyright information regarding this work can be found at the following address: http://creativecommons.org/licenses/by/4.0

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Copyright Statement
Copyright information regarding this work can be found at the following address: http://creativecommons.org/licenses/by/4.0





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